Inventor · disambiguated record
Min-Hwa Chi
Also filed as: CHI MIN-HWA
273 granted patents·29 pending applications·5,464 citations·filing 1995–2023
99Inventor score
Files withGLOBALFOUNDRIES INC130TAIWAN SEMICONDUCTOR MFG42NAT SEMICONDUCTOR CORP27SIEN QINGDAO INTEGRATED CIRCUITS CO LTD21VANGUARD INT SEMICONDUCT CORP19
Top patents by PatentIndex Score
302 records- 0199US9831346B1FinFETs with air-gap spacers and methods for forming the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 28, 2017·33 cites·11 claims
- 0299US9653583B1Methods of forming diffusion breaks on integrated circuit products comprised of finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 16, 2017·79 cites·25 claims
- 0399US8836141B2Conductor layout technique to reduce stress-induced void formationsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 16, 2014·105 cites·13 claims
- 0498US9698241B1Integrated circuits with replacement metal gates and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 4, 2017·28 cites·16 claims
- 0598US8674413B1Methods of forming fins and isolation regions on a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2012·Granted Mar 18, 2014·54 cites·30 claims
- 0698US7564105B2Quasi-plannar and FinFET-like transistors on bulk siliconTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 21, 2009·138 cites·39 claims
- 0798US6171923B1Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jan 9, 2001·219 cites·12 claims
- 0897US9805982B1Apparatus and method of adjusting work-function metal thickness to provide variable threshold voltages in finFETsGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·19 cites·17 claims
- 0997US6362012B1Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 26, 2002·138 cites·23 claims
- 1097US6271084B1Method of fabricating a metal-insulator-metal (MIM), capacitor structure using a damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 7, 2001·169 cites·24 claims
- 1196US10170377B1Memory cell with recessed source/drain contacts to reduce capacitanceGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 1, 2019·13 cites·16 claims
- 1296US10164041B1Method of forming gate-all-around (GAA) FinFET and GAA FinFET formed therebyGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·14 cites·13 claims
- 1396US9741615B1Contacts for a fin-type field-effect transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 22, 2017·15 cites·9 claims
- 1496US9536991B1Single diffusion break structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·19 cites·10 claims
- 1596US9385124B1Methods of forming reduced thickness spacers in CMOS based integrated circuit productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·19 cites·29 claims
- 1696US9023705B1Methods of forming stressed multilayer FinFET devices with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2013·Granted May 5, 2015·27 cites·10 claims
- 1796US8421166B2Semiconductor device and fabrication thereofCHI MIN-HWA·Filed 2011·Granted Apr 16, 2013·29 cites·12 claims
- 1896US8158512B2Atomic layer deposition method and semiconductor device formed by the sameJI HUA·Filed 2008·Granted Apr 17, 2012·463 cites·16 claims
- 1996US5981335AMethod of making stacked gate memory cell structureVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 9, 1999·165 cites·16 claims
- 2096US5608243ASingle split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic rangeNAT SEMICONDUCTOR CORP·Filed 1995·Granted Mar 4, 1997·185 cites·9 claims
- 2195US9543298B1Single diffusion break structure and cuts later method of makingGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 10, 2017·14 cites·10 claims
- 2295US9478625B1Metal resistor using FinFET-based replacement gate processGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 25, 2016·13 cites·20 claims
- 2395US9396995B1MOL contact metallization scheme for improved yield and device reliabilityGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·15 cites·17 claims
- 2495US9263587B1Fin device with blocking layer in channel regionGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·16 cites·20 claims
- 2595US8741723B2Methods of forming self-aligned contacts for a semiconductor deviceCHI MIN-HWA·Filed 2012·Granted Jun 3, 2014·24 cites·25 claims
- 2695US8617996B1Fin removal methodGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 31, 2013·146 cites·20 claims
- 2794US9443771B1Methods to thin down RMG sidewall layers for scalability of gate-last planar CMOS and FinFET technologyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 13, 2016·10 cites·17 claims
- 2894US9419015B1Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·11 cites·14 claims
- 2994US9006066B2FinFET with active region shaped structures and channel separationGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 14, 2015·19 cites·10 claims
- 3094US8815659B2Methods of forming a FinFET semiconductor device by performing an epitaxial growth processGLOBALFOUNDRIES INC·Filed 2012·Granted Aug 26, 2014·15 cites·28 claims
- 3193US10032910B2FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 24, 2018·9 cites·10 claims
- 3293US9425100B1Methods of facilitating fabricating transistorsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·15 cites·14 claims
- 3393US8946029B2Methods of manufacturing integrated circuits having FinFET structures with epitaxially formed source/drain regionsGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 3, 2015·16 cites·7 claims
- 3493US7176537B2High performance CMOS with metal-gate and Schottky source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 13, 2007·21 cites·15 claims
- 3593US5477485AMethod for programming a single EPROM or FLASH memory cell to store multiple levels of data that utilizes a floating substrateNAT SEMICONDUCTOR CORP·Filed 1995·Granted Dec 19, 1995·109 cites·5 claims
- 3692US9818689B1Metal-insulator-metal capacitor and methods of fabricationGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 14, 2017·9 cites·13 claims
- 3792US9524911B1Method for creating self-aligned SDB for minimum gate-junction pitch and epitaxy formation in a fin-type IC deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 20, 2016·18 cites·16 claims
- 3892US9331159B1Fabricating transistor(s) with raised active regions having angled upper surfacesGLOBALFOUNDRIES INC·Filed 2015·Granted May 3, 2016·10 cites·20 claims
- 3992US8906768B2Wrap around stressor formationGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 9, 2014·15 cites·20 claims
- 4090US9984932B1Semiconductor fin loop for use with diffusion breakGLOBALFOUNDRIES INC·Filed 2016·Granted May 29, 2018·6 cites·13 claims
- 4190US9964605B2Methods for crossed-fins FinFET device for sensing and measuring magnetic fieldsGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·6 cites·10 claims
- 4290US9734897B1SRAM bitcell structures facilitating biasing of pass gate transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 15, 2017·7 cites·20 claims
- 4390US9601495B2Three-dimensional semiconductor device with co-fabricated adjacent capacitorGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·6 cites·11 claims
- 4490US9418899B1Method of multi-WF for multi-Vt and thin sidewall deposition by implantation for gate-last planar CMOS and FinFET technologyGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·8 cites·14 claims
- 4590US9153496B2Methods of manufacturing integrated circuits having FinFET structures with epitaxially formed source/drain regionsGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 6, 2015·10 cites·20 claims
- 4690US8772102B2Methods of forming self-aligned contacts for a semiconductor device formed using replacement gate techniquesCHI MIN-HWA·Filed 2012·Granted Jul 8, 2014·11 cites·42 claims
- 4790US6486529B2Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 26, 2002·56 cites·22 claims
- 4890US6288943B1Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gateTAIWAN SEMICONDUCTOR MFG CORP·Filed 2000·Granted Sep 11, 2001·53 cites·12 claims
- 4990US5998820AFabrication method and structure for a DRAM cell with bipolar charge amplificationVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 7, 1999·61 cites·7 claims
- 5090US5587596ASingle MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic rangeNAT SEMICONDUCTOR CORP·Filed 1995·Granted Dec 24, 1996·103 cites·12 claims
Showing the top 50 of 302 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →