Inventor · disambiguated record
Michael A. Gribelyuk
Also filed as: GRIBELYUK MICHAEL · GRIBELYUK MICHAEL A · GRIBELYUK MICHAEL ABRAMOVICH
29 granted patents·18 pending applications·599 citations·filing 2000–2025
97Inventor score
Top patents by PatentIndex Score
47 records- 0196US11495741B2Bismuth antimony alloys for use as topological insulatorsWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 8, 2022·15 cites·24 claims
- 0296US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 0396US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 0494US6511876B2High mobility FETS using A1203 as a gate oxideIBM·Filed 2001·Granted Jan 28, 2003·84 cites·38 claims
- 0592US7279413B2High-temperature stable gate structure with metallic electrodeIBM·Filed 2004·Granted Oct 9, 2007·53 cites·13 claims
- 0692US6991979B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2003·Granted Jan 31, 2006·52 cites·9 claims
- 0789US11763973B2Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devicesWESTERN DIGITAL TECH INC·Filed 2021·Granted Sep 19, 2023·1 cites·32 claims
- 0889US7754594B1Method for tuning the threshold voltage of a metal gate and high-k deviceIBM·Filed 2009·Granted Jul 13, 2010·17 cites·23 claims
- 0989US6413386B1Reactive sputtering method for forming metal-silicon layerIBM·Filed 2000·Granted Jul 2, 2002·40 cites·22 claims
- 1087US7683418B2High-temperature stable gate structure with metallic electrodeIBM·Filed 2008·Granted Mar 23, 2010·10 cites·5 claims
- 1186US2025366376A1Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM DevicesWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 1285US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 1384US6573197B2Thermally stable poly-Si/high dielectric constant material interfacesIBM·Filed 2001·Granted Jun 3, 2003·32 cites·39 claims
- 1480US7091128B2Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETsIBM·Filed 2005·Granted Aug 15, 2006·6 cites·10 claims
- 1577US7521345B2High-temperature stable gate structure with metallic electrodeIBM·Filed 2007·Granted Apr 21, 2009·5 cites·2 claims
- 1676US2025014618A1Doping Process To Refine Grain Size For Smoother BiSb Film SurfaceWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 1776US2025054671A1Highly Textured 001 BiSb And Materials for Making SameWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 1875US12176132B2Highly textured 001 BiSb and materials for making sameWESTERN DIGITAL TECH INC·Filed 2022·Granted Dec 24, 2024·0 cites·24 claims
- 1975US12125512B2Doping process to refine grain size for smoother BiSb film surfaceWESTERN DIGITAL TECH INC·Filed 2022·Granted Oct 22, 2024·0 cites·23 claims
- 2075US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 2174US12408560B2Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devicesWESTERN DIGITAL TECH INC·Filed 2023·Granted Sep 2, 2025·0 cites·24 claims
- 2273US7776701B2Metal oxynitride as a pFET materialIBM·Filed 2008·Granted Aug 17, 2010·4 cites·8 claims
- 2373US7436034B2Metal oxynitride as a pFET materialIBM·Filed 2005·Granted Oct 14, 2008·4 cites·11 claims
- 2472US7667277B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksIBM·Filed 2005·Granted Feb 23, 2010·4 cites·18 claims
- 2571US12482588B2Nitrogen doped oxides for lower bandgapWESTERN DIGITAL TECH INC·Filed 2024·Granted Nov 25, 2025·0 cites·19 claims
- 2671US7015469B2Electron holography methodIBM·Filed 2004·Granted Mar 21, 2006·8 cites·5 claims
- 2769US8288237B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksCALLEGARI ALESSANDRO C·Filed 2009·Granted Oct 16, 2012·5 cites·14 claims
- 2867US12106791B2Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devicesWESTERN DIGITAL TECH INC·Filed 2022·Granted Oct 1, 2024·0 cites·34 claims
- 2956US2025266198A1YPtBi 1:1:1 Composition Design Using Krypton Sputtering in Deposition SystemsWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 3055US11875827B2SOT reader using BiSb topological insulatorWESTERN DIGITAL TECH INC·Filed 2022·Granted Jan 16, 2024·0 cites·29 claims
- 3154US2025228140A1Dopants to Decrease BiSbX's and YBiPt's Bandgap for Optimal Current-In-Plane (CIP) ConductivityWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 3254US2024032437A1Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage DevicesWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3352US7566938B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2005·Granted Jul 28, 2009·0 cites·13 claims
- 3451US2025252971A1Shunt Reducing Migration Barrier Layer Materials and Insertion Techniques for Epitaxial Topological MaterialsWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 3550US2025255195A1Buffer Layers to Grow BiSb and YPtBi to Match the Crystal Symmetry of Interlayers and Ferromagnetic layers to Generate Spin-Polarized CurrentWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 3650US2017271471A1NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTUREIBM·Filed 2017·Application pending·0 cites
- 3750US2025246353A1RuAl and MgTiO Lamination For Effective Buffer and Interlayers For Topological Material LayersWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 3849US8153514B2Method of forming metal/high-κ gate stacks with high mobilityANDREONI WANDA·Filed 2008·Granted Apr 10, 2012·0 cites·5 claims
- 3948US2017194454A1NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTUREIBM·Filed 2016·Application pending·0 cites
- 4048US2025218457A1Magnetic Heads Having Low Magnetic Coercivity (HC) And High Saturated Magnetic Flux Density (BS) In Ferromagnetic (FM) Layer(s) Or Shield(s) With Minimized SaturationWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 4147US2025248317A1Dopants to Increase BiSbX Bandgap for Optimal CPP ConductivityWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
- 4246US2024412759A1Film and Method for BiSbX (012) Texture for SOT DevicesWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 4345US2007152276A1High performance CMOS circuits, and methods for fabricating the sameIBM·Filed 2005·Application pending·0 cites
- 4444US2006289903A1Method of forming metal/high-k gate stacks with high mobilityANDREONI WANDA·Filed 2006·Application pending·0 cites
- 4543US2009212332A1Field effect transistor with reduced overlap capacitanceIBM·Filed 2008·Application pending·0 cites
- 4642US2009152651A1Gate stack structure with oxygen gettering layerIBM·Filed 2007·Application pending·0 cites
- 4738US7232774B2Polycrystalline silicon layer with nano-grain structure and method of manufactureIBM·Filed 2004·Granted Jun 19, 2007·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →