Inventor · disambiguated record
Ming-Yin Hao
Also filed as: HAO MING · HAO MING-YIN
28 granted patents·2 pending applications·1,187 citations·filing 1996–2025
97Inventor score
Files withADVANCED MICRO DEVICES INC23UNITED MICROELECTRONICS CORP3JIANGSU HUACHUANG MICROSYSTEM COMPANY LTD2HAO MING1
Top patents by PatentIndex Score
30 records- 0198US5939763AUltrathin oxynitride structure and process for VLSI applicationsADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 17, 1999·263 cites·27 claims
- 0296US6506640B1Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-throughADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 14, 2003·129 cites·5 claims
- 0396US6444550B1Laser tailoring retrograde channel profile in surfacesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·135 cites·12 claims
- 0493US6245689B1Process for reliable ultrathin oxynitride formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 12, 2001·107 cites·27 claims
- 0592US6194259B1Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implantsADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 27, 2001·135 cites·23 claims
- 0687US6472283B1MOS transistor processing utilizing UV-nitride removable spacer and HF etchADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 29, 2002·51 cites·19 claims
- 0787US6344396B1Removable spacer technology using ion implantation for forming asymmetric MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 5, 2002·51 cites·18 claims
- 0882US6475868B1Oxygen implantation for reduction of junction capacitance in MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·29 cites·14 claims
- 0982US6429083B1Removable spacer technology using ion implantation to augment etch rate differences of spacer materialsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·32 cites·31 claims
- 1074US6316322B1Method for fabricating semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 13, 2001·17 cites·7 claims
- 1170US6410393B1Semiconductor device with asymmetric channel dopant profileADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·13 cites·9 claims
- 1270US6372582B1Indium retrograde channel doping for improved gate oxide reliabilityADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 16, 2002·13 cites·13 claims
- 1370US6342423B1MOS-type transistor processing utilizing UV-nitride removable spacer and HF etchADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 29, 2002·16 cites·19 claims
- 1470US6297112B1Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 2, 2001·14 cites·5 claims
- 1569US6306702B1Dual spacer method of forming CMOS transistors with substantially the same sub 0.25 micron gate lengthADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 23, 2001·29 cites·14 claims
- 1667US6316303B1Method of fabricating a MOS transistor having SEG siliconUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 13, 2001·13 cites·15 claims
- 1765USD1044541SWristbandHAO MING·Filed 2022·Granted Oct 1, 2024·3 cites·1 claims
- 1864US6423601B1Retrograde well structure formation by nitrogen implantationADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 23, 2002·9 cites·19 claims
- 1963US6894364B2Capacitor in an interconnect system and method of manufacturing thereofUNITED MICROELECTRONICS CORP·Filed 2003·Granted May 17, 2005·13 cites·13 claims
- 2060US6372590B1Method for making transistor having reduced series resistanceADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 16, 2002·23 cites·19 claims
- 2160US6187687B1Minimization of line width variation in photolithographyADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 13, 2001·23 cites·14 claims
- 2256US5817536AMethod to optimize p-channel CMOS ICs using Qbd as a monitor of boron penetrationADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 6, 1998·17 cites·6 claims
- 2355US5786254AHot-carrier reliability in submicron MOS devices by oxynitridationADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 28, 1998·16 cites·3 claims
- 2451US12293184B1Illegal address mask method and device for cores of DSPJIANGSU HUACHUANG MICROSYSTEM COMPANY LTD·Filed 2024·Granted May 6, 2025·0 cites·9 claims
- 2550US2025245003A1Pipelined Decoding Microarchitecture Design Method for RISC-V Vector InstructionsJIANGSU HUACHUANG MICROSYSTEM COMPANY LTD·Filed 2025·Application pending·0 cites
- 2645US5973370APreventing boron penetration through thin gate oxide of P-channel devices in advanced CMOS technologyADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 26, 1999·10 cites·3 claims
- 2744US6051460APreventing boron penetration through thin gate oxide of P-channel devices by doping polygate with siliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 18, 2000·9 cites·9 claims
- 2844US5757204AMethod and circuit for detecting boron ("B") in a semiconductor device using threshold voltage ("V") fluence testADVANCED MICRO DEVICES INC·Filed 1996·Granted May 26, 1998·11 cites·28 claims
- 2940US6274915B1Method of improving MOS device performance by controlling degree of depletion in the gate electrodeADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·6 cites·8 claims
- 3037US2003186532A1Method of forming a titanium-containing glue layerFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →