Inventor · disambiguated record
Mitsuaki Horiuchi
Also filed as: HORIUCHI MITSUAKI
23 granted patents·2 pending applications·725 citations·filing 1984–2004
97Inventor score
Top patents by PatentIndex Score
25 records- 0197US6737318B2Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringHITACHI LTD·Filed 2001·Granted May 18, 2004·105 cites·14 claims
- 0297US5504029AMethod of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETsHITACHI LTD·Filed 1994·Granted Apr 2, 1996·99 cites·23 claims
- 0396US4853102ASputtering process and an apparatus for carrying out the sameHITACHI LTD·Filed 1987·Granted Aug 1, 1989·97 cites·24 claims
- 0495US5153685ASemiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringHITACHI LTD·Filed 1988·Granted Oct 6, 1992·72 cites·22 claims
- 0583US5202275ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1990·Granted Apr 13, 1993·43 cites·23 claims
- 0679US5780882ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1995·Granted Jul 14, 1998·33 cites·8 claims
- 0779US5060050ASemiconductor integrated circuit deviceHITACHI LTD·Filed 1990·Granted Oct 22, 1991·63 cites·17 claims
- 0877US5930624AMethod of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiringHITACHI LTD·Filed 1998·Granted Jul 27, 1999·22 cites·5 claims
- 0976US6548847B2Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal filmHITACHI LTD·Filed 2001·Granted Apr 15, 2003·12 cites·33 claims
- 1076US4547279ASputtering apparatusHITACHI LTD·Filed 1984·Granted Oct 15, 1985·47 cites·28 claims
- 1173US5331191ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1992·Granted Jul 19, 1994·24 cites·11 claims
- 1264US4830891AMethod for selective deposition of metal thin filmHITACHI LTD·Filed 1987·Granted May 16, 1989·20 cites·10 claims
- 1362US6894334B2Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI VLSI ENG·Filed 2003·Granted May 17, 2005·5 cites·33 claims
- 1461US6169324B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·13 cites·19 claims
- 1561US5739589ASemiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the sameHITACHI LTD·Filed 1996·Granted Apr 14, 1998·13 cites·21 claims
- 1659US6445055B2Semiconductor integrated circuit device and manufacturing method thereofHITACHI LTD·Filed 2001·Granted Sep 3, 2002·11 cites·29 claims
- 1753US5753550ASemiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringHITACHI LTD·Filed 1996·Granted May 19, 1998·7 cites·20 claims
- 1851US6342412B1Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1999·Granted Jan 29, 2002·8 cites·19 claims
- 1950US6127255ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1997·Granted Oct 3, 2000·8 cites·12 claims
- 2050US5811316AMethod of forming teos oxide and silicon nitride passivation layer on aluminum wiringHITACHI LTD·Filed 1995·Granted Sep 22, 1998·8 cites·13 claims
- 2147US5557147ASemiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the sameHITACHI LTD·Filed 1994·Granted Sep 17, 1996·7 cites·18 claims
- 2245US6281071B1Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiringHIATCHI LTD·Filed 1999·Granted Aug 28, 2001·4 cites·22 claims
- 2339US2004155289A1Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringFiled 2004·Application pending·0 cites
- 2437US2002028574A1Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiringFiled 2001·Application pending·0 cites
- 2528US5068710ASemiconductor device with multilayer base contactHITACHI LTD·Filed 1989·Granted Nov 26, 1991·4 cites·43 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →