Inventor · disambiguated record
Ming-Kuan Kao
Also filed as: KAO MING-KUAN
9 granted patents·5 pending applications·92 citations·filing 1998–2018
87Inventor score
Top patents by PatentIndex Score
14 records- 0164US6071794AMethod to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulatorMOSEL VITELIC INC·Filed 1999·Granted Jun 6, 2000·21 cites·17 claims
- 0262US6355974B1Method to prevent the formation of a thinner portion of insulating layer at the junction between the side walls and the bottom insulatorMOSEL VITELIC INC·Filed 2000·Granted Mar 12, 2002·9 cites·5 claims
- 0361US6066529AMethod for enlarging surface area of a plurality of hemi-spherical grains on the surface of a semiconductor chipMOSEL VITELIC INC·Filed 1998·Granted May 23, 2000·27 cites·11 claims
- 0447US6358864B1Method of fabricating an oxide/nitride multilayer structure for IC manufactureMOSEL VITELIC INC·Filed 1999·Granted Mar 19, 2002·17 cites·13 claims
- 0538US6245643B1Method of removing polysilicon residual in a LOCOS isolation process using an etching selectivity solutionMOSEL VITELIC INC·Filed 1999·Granted Jun 12, 2001·8 cites·15 claims
- 0638US2019384269A1Device and method for analyzing manufacturing apparatusUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 0734US2002175145A1Method of forming void-free intermetal dielectricsFiled 2001·Application pending·0 cites
- 0831US6310688B1Method for measuring the parameter of a rough filmMOSEL VITELIC INC·Filed 1998·Granted Oct 30, 2001·5 cites·6 claims
- 0931US2003075387A1Wafer loading deviceFiled 2001·Application pending·0 cites
- 1031US2003077917A1Method of fabricating a void-free barrier layerFiled 2001·Application pending·0 cites
- 1130US6261966B1Method for improving trench isolationMOSEL VITELIC INC·Filed 1999·Granted Jul 17, 2001·5 cites·7 claims
- 1228US6171904B1Method for forming rugged polysilicon capacitorMOSEL VITELIC INC·Filed 1999·Granted Jan 9, 2001·0 cites·29 claims
- 1327US2004092126A1Method for preventing reworked photoresist from collapsingSILICON INTEGRATED SYS CORP·Filed 2002·Application pending·0 cites
- 1426US6261930B1Method for forming a hemispherical-grain polysiliconMOSEL VITELIC INC·Filed 1999·Granted Jul 17, 2001·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →