Inventor · disambiguated record
Min-Hung Lee
Also filed as: LEE MIN-HUNG
18 granted patents·13 pending applications·124 citations·filing 1999–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11IND TECH RES INST10LEE MIN-HUNG2NAT SCIENCE COUNCIL2UNIV NAT TAIWAN2
Top patents by PatentIndex Score
31 records- 0196US9978868B2Negative capacitance field effect transistor with charged dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·35 cites·20 claims
- 0291US9768030B2Method for forming tunnel MOSFET with ferroelectric gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·8 cites·20 claims
- 0382US12408389B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 0479US7741169B2Mobility enhancement by strained channel CMOSFET with single workfunction metal-gate and fabrication method thereofIND TECH RES INST·Filed 2008·Granted Jun 22, 2010·6 cites·5 claims
- 0578US7626191B2Lateral phase change memory with spacer electrodesIND TECH RES INST·Filed 2006·Granted Dec 1, 2009·10 cites·8 claims
- 0675US12062719B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 0774US7091522B2Strained silicon carbon alloy MOSFET structure and fabrication method thereofIND RES TECHNOLOGY INST·Filed 2004·Granted Aug 15, 2006·23 cites·6 claims
- 0872US7835177B2Phase change memory cell and method of fabricatingIND TECH RES INST·Filed 2006·Granted Nov 16, 2010·6 cites·9 claims
- 0968US7282414B2Fabrication methods for compressive strained-silicon and transistors using the sameIND TECH RES INST·Filed 2004·Granted Oct 16, 2007·12 cites·20 claims
- 1068US2025273267A1Method of operating memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1167US11942546B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 26, 2024·0 cites·20 claims
- 1265US9391162B2Tunnel MOSFET with ferroelectric gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 12, 2016·1 cites·15 claims
- 1361US2025365969A1Memory device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1461US2025228144A1Formation method of memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1560US12334148B2Method of operating memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1659US7598113B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2006·Granted Oct 6, 2009·1 cites·15 claims
- 1754US7868314B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2009·Granted Jan 11, 2011·0 cites·12 claims
- 1851US2025316310A1Memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1948US2008023733A1Fabrication methods for compressive strained-silicon and transistors using the sameLEE MIN-HUNG·Filed 2007·Application pending·0 cites
- 2047US2007069298A1Mobility enhancement by strained channel CMOSFET with single workfunction metal-gate and fabrication method thereofIND TECH RES INST·Filed 2005·Application pending·0 cites
- 2146US6268615B1PhotodetectorNAT SCIENCE COUNCIL·Filed 1999·Granted Jul 31, 2001·13 cites·24 claims
- 2246US2009302349A1Strained germanium field effect transistor and method of fabricating the sameIND TECH RES INST·Filed 2009·Application pending·0 cites
- 2344US2007291533A1Phase change memory device and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 2442US6812729B2System and method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS deviceUNIV NAT TAIWAN·Filed 2002·Granted Nov 2, 2004·2 cites·2 claims
- 2541US10686072B2Semiconductor device and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·8 claims
- 2639US2018190853A1Method for manufacturing heterojunction with intrinsic thin layer solar cellUNIV NAT TAIWAN NORMAL·Filed 2017·Application pending·0 cites
- 2739US2007045610A1Transistor device with strained germanium (Ge) layer by selectively growth and fabricating method thereofIND TECH RES INST·Filed 2005·Application pending·0 cites
- 2838US6385396B1Reflector structure for improving irradiation uniformity of linear lamp arrayNAT SCIENCE COUNCIL·Filed 1999·Granted May 7, 2002·7 cites·13 claims
- 2937US2006284164A1Strained germanium field effect transistor and method of making the sameLEE MIN-HUNG·Filed 2005·Application pending·0 cites
- 3036US2003197196A1Methods of gas switching in rapid thermal process for improving the reliability of the insulation layerUNIV NAT TAIWAN·Filed 2002·Application pending·0 cites
- 3136US2007148862A1Phase-change memory layer and method of manufacturing the same and phase-change memory cellCHEN YI-CHAN·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →