Inventor · disambiguated record
Ming-Hsi Liu
Also filed as: LIU MING · LIU MING-HSI
10 granted patents·1 pending application·108 citations·filing 1995–2024
89Inventor score
Top patents by PatentIndex Score
11 records- 0162US2024327982A1Method for an amorphous boron nitride layer and associated amorphous boron nitride layersASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 0260US6963140B2Transistor having multiple gate padsANALOG POWER INTELLECTUAL PROP·Filed 2003·Granted Nov 8, 2005·13 cites·4 claims
- 0356US5567270AProcess of forming contacts and vias having tapered sidewallWINBOND ELECTRONICS CORP·Filed 1995·Granted Oct 22, 1996·24 cites·9 claims
- 0454US5843835ADamage free gate dielectric process during gate electrode plasma etchingWINBOND ELECTRONICS CORP·Filed 1996·Granted Dec 1, 1998·20 cites·7 claims
- 0550US5686338AProcess for fabricating high-resistance load resistors using dummy polysilicon in four-transistor SRAM devicesWINBOND ELECTRONICS CORP·Filed 1996·Granted Nov 11, 1997·16 cites·7 claims
- 0646US5705418AProcess for fabricating reduced-thickness high-resistance load resistors in four-transistor SRAM devicesWINBOND ELECTRONICS CORP·Filed 1996·Granted Jan 6, 1998·11 cites·8 claims
- 0739US5923998AEnlarged align tolerance in buried contact process using sidewall spacerWINBOND ELECTRONICS CORP·Filed 1996·Granted Jul 13, 1999·9 cites·5 claims
- 0836US5679607AMethod of manufacturing a damage free buried contact using salicide technologyWINBOND ELECTRONICS CORP·Filed 1995·Granted Oct 21, 1997·4 cites·12 claims
- 0935US5844284ADamage free buried contact using salicide technologyFiled 1997·Granted Dec 1, 1998·4 cites·9 claims
- 1034US5804455AReduced primary crystalline defect damage in NMOSFETS with an optimized LDD structureWINBOND ELECTRONICS CORP·Filed 1996·Granted Sep 8, 1998·5 cites·2 claims
- 1130US5759919AMethod for reducing gate oxide damages during gate electrode plasma etchingWINBOND ELECTRONICS CORP·Filed 1996·Granted Jun 2, 1998·2 cites·7 claims
Join the waitlist — get patent alerts
Get an alert when Ming-Hsi Liu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →