Inventor · disambiguated record
Ming Qiao
Also filed as: QIAO MING
19 granted patents·7 pending applications·54 citations·filing 2010–2023
90Inventor score
Files withUNIV ELECTRONIC SCI & TECH CHINA21JUNIPER NETWORKS INC2HONGFUJIN PREC IND SHENZHEN1QIAO MING1ZHANGYUE TECH CO LTD1
Top patents by PatentIndex Score
26 records- 0195US10720524B1Split-gate enhanced power MOS deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2019·Granted Jul 21, 2020·19 cites·6 claims
- 0292US11424331B1Power semiconductor device for improving hot carrier injectionUNIV ELECTRONIC SCI & TECH CHINA·Filed 2021·Granted Aug 23, 2022·5 cites·16 claims
- 0390US10068965B1Lateral high-voltage deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2017·Granted Sep 4, 2018·12 cites·12 claims
- 0486US10510747B1BCD semiconductor device and method for manufacturing the sameUNIV ELECTRONIC SCI & TECH CHINA·Filed 2018·Granted Dec 17, 2019·7 cites·20 claims
- 0581US8704329B2SOI devices for plasma display panel driver chipQIAO MING·Filed 2010·Granted Apr 22, 2014·7 cites·17 claims
- 0677US10608106B2Power semiconductor devicesUNIV ELECTRONIC SCI & TECH CHINA·Filed 2018·Granted Mar 31, 2020·3 cites·10 claims
- 0759US12488987B2Variable selective etching technology for thick SOI devicesUNIV ELECTRONIC SCI & TECH CHINA·Filed 2023·Granted Dec 2, 2025·0 cites·9 claims
- 0859US12464766B2Termination structure of super-junction power device comprising plurality of runway-shaped rings as the resistive field plateUNIV ELECTRONIC SCI & TECH CHINA·Filed 2022·Granted Nov 4, 2025·0 cites·18 claims
- 0958US10476956B1Adaptive bulk write processJUNIPER NETWORKS INC·Filed 2015·Granted Nov 12, 2019·1 cites·20 claims
- 1057US2025081553A1Power semiconductor deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2023·Application pending·0 cites
- 1155US2024395930A1Lateral power semiconductor deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2023·Application pending·0 cites
- 1254US12328901B2Bidirectional conduction trench gate power MOS device and manufacturing method thereofUNIV ELECTRONIC SCI & TECH CHINA·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 1354US2025107137A1Lateral power semiconductor device layout and device structureUNIV ELECTRONIC SCI & TECH CHINA·Filed 2023·Application pending·0 cites
- 1450US11855203B2Power semiconductor deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2021·Granted Dec 26, 2023·0 cites·18 claims
- 1549US11888022B2SOI lateral homogenization field high voltage power semiconductor device, manufacturing method and application thereofUNIV ELECTRONIC SCI & TECH CHINA·Filed 2022·Granted Jan 30, 2024·0 cites·17 claims
- 1648US12382679B2Semiconductor device and manufacturing methodUNIV ELECTRONIC SCI & TECH CHINA·Filed 2022·Granted Aug 5, 2025·0 cites·18 claims
- 1743US2020274851A1Full featured packet-based automotive network security gatewayJUNIPER NETWORKS INC·Filed 2019·Application pending·0 cites
- 1843US2021305051A1Metal Wiring Method for Reducing Gate Resistance of a Narrow Control Gate StructureUNIV ELECTRONIC SCI & TECH CHINA·Filed 2020·Application pending·0 cites
- 1942US11222890B2Integrated power semiconductor device and method for manufacturing the sameUNIV ELECTRONIC SCI & TECH CHINA·Filed 2020·Granted Jan 11, 2022·0 cites·12 claims
- 2042US2022343077A1Method for displaying entity-associated information based on electronic book and electronic deviceZHANGYUE TECH CO LTD·Filed 2020·Application pending·0 cites
- 2141US12027577B2Lateral power semiconductor deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2021·Granted Jul 2, 2024·0 cites·18 claims
- 2240US11211486B2Power MOS device with low gate charge and a method for manufacturing the sameUNIV ELECTRONIC SCI & TECH CHINA·Filed 2020·Granted Dec 28, 2021·0 cites·5 claims
- 2337US11227949B2Power semiconductor devices with low specific on-resistanceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2020·Granted Jan 18, 2022·0 cites·18 claims
- 2435US10607987B2Bipolar-CMOS-DMOS semiconductor device and manufacturing methodUNIV ELECTRONIC SCI & TECH CHINA·Filed 2019·Granted Mar 31, 2020·0 cites·10 claims
- 2534US2011001403A1Electronic device housing and method for manufacturing the sameHONGFUJIN PREC IND SHENZHEN·Filed 2010·Application pending·0 cites
- 2632US10910362B2High voltage ESD protection deviceUNIV ELECTRONIC SCI & TECH CHINA·Filed 2018·Granted Feb 2, 2021·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →