Inventor · disambiguated record
Ming-Feng Shieh
Also filed as: SHIEH MING-FENG
117 granted patents·8 pending applications·8,520 citations·filing 2005–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD58TAIWAN SEMICONDUCTOR MFG39SHIEH MING-FENG9WANG CHIEN-HSUN3DE HO WEI2
Top patents by PatentIndex Score
125 records- 0199US9576814B2Method of spacer patterning to form a target integrated circuit patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·3.1k cites·20 claims
- 0299US9153478B2Spacer etching process for integrated circuit designTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·118 cites·20 claims
- 0399US8975129B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·60 cites·20 claims
- 0499US8039179B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 18, 2011·121 cites·20 claims
- 0598US8846490B1Method of fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·37 cites·20 claims
- 0698US8816444B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 26, 2014·1.3k cites·20 claims
- 0798US8110466B2Cross OD FinFET patterningSHIEH MING-FENG·Filed 2010·Granted Feb 7, 2012·44 cites·14 claims
- 0898US7862962B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 4, 2011·46 cites·20 claims
- 0997US9773676B2Lithography using high selectivity spacers for pitch reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·17 cites·19 claims
- 1097US9236267B2Cut-mask patterning process for fin-like field effect transistor (FinFET) deviceDE HO WEI·Filed 2012·Granted Jan 12, 2016·3.1k cites·20 claims
- 1197US9177797B2Lithography using high selectivity spacers for pitch reductionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·28 cites·20 claims
- 1297US9153483B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·28 cites·20 claims
- 1397US7989355B2Method of pitch halvingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 2, 2011·58 cites·20 claims
- 1496US9034723B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 19, 2015·28 cites·20 claims
- 1596US8835323B1Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 16, 2014·22 cites·20 claims
- 1696US8735991B2High gate density devices and methodsSHIEH MING-FENG·Filed 2011·Granted May 27, 2014·24 cites·20 claims
- 1795US9368594B2Method of forming a fin-like BJTTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·11 cites·20 claims
- 1895US9324866B2Structure and method for transistor with line end extensionYU SHAO-MING·Filed 2012·Granted Apr 26, 2016·30 cites·15 claims
- 1995US8486769B2Method for forming metrology structures from fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Jul 16, 2013·23 cites·20 claims
- 2094US10014175B2Lithography using high selectivity spacers for pitch reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·7 cites·20 claims
- 2194US8962464B1Self-alignment for using two or more layers and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·16 cites·20 claims
- 2294US8932957B2Method of fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 13, 2015·18 cites·20 claims
- 2394US8881066B2Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) deviceSHIEH MING-FENG·Filed 2011·Granted Nov 4, 2014·21 cites·20 claims
- 2494US8741776B2Patterning process for fin-like field effect transistor (finFET) deviceDE HO WEI·Filed 2012·Granted Jun 3, 2014·35 cites·20 claims
- 2594US8525267B2Device and method for forming Fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Sep 3, 2013·22 cites·17 claims
- 2693US9437415B2Layer alignment in FinFET fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 6, 2016·13 cites·20 claims
- 2793US9136106B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·11 cites·20 claims
- 2893US8847295B2Structure and method for fabricating fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·13 cites·20 claims
- 2993US8241823B2Method of fabrication of a semiconductor device having reduced pitchSHIEH MING-FENG·Filed 2011·Granted Aug 14, 2012·11 cites·20 claims
- 3092US9252021B2Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 2, 2016·11 cites·20 claims
- 3191US9035426B2Fin-like BJTCHANG CHIH-SHENG·Filed 2011·Granted May 19, 2015·11 cites·20 claims
- 3291US8806397B2Method and device for increasing fin device density for unaligned finsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·5 cites·20 claims
- 3390US10096519B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 9, 2018·5 cites·20 claims
- 3490US9023695B2Method of patterning features of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 5, 2015·11 cites·15 claims
- 3589US8799833B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 5, 2014·12 cites·19 claims
- 3688US11037882B2Overlay markTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 3788US9245763B2Mechanisms for forming patterns using multiple lithography processesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 26, 2016·6 cites·20 claims
- 3888US9054159B2Method of patterning a feature of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 9, 2015·7 cites·19 claims
- 3988US8871597B2High gate density devices and methodsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 28, 2014·7 cites·20 claims
- 4087US8908181B2Overlay mark and method of measuring the sameCHEN CHEN-YU·Filed 2012·Granted Dec 9, 2014·5 cites·19 claims
- 4186US9437497B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 6, 2016·8 cites·20 claims
- 4286US8828885B2Photo resist trimmed line end spaceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 9, 2014·5 cites·20 claims
- 4385US9362132B2Systems and methods for a sequential spacer schemeTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·4 cites·20 claims
- 4484US9581900B2Self aligned patterning with multiple resist layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·3 cites·20 claims
- 4583US12218239B2Structure and method for providing line end extensions for fin-type active regionsMOSAID TECH INCORPORATED·Filed 2023·Granted Feb 4, 2025·0 cites·16 claims
- 4683US10672656B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 2, 2020·3 cites·20 claims
- 4783US9735140B2Systems and methods for a sequential spacer schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 4883US9466486B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 11, 2016·5 cites·20 claims
- 4982US9917192B2Structure and method for transistors with line end extensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·3 cites·19 claims
- 5082US9502261B2Spacer etching process for integrated circuit designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·2 cites·20 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →