Inventor · disambiguated record
Michael Nicolas Albert Tran
Also filed as: TRAN MICHAEL · TRAN MICHAEL NICOLAS ALBERT
24 granted patents·8 pending applications·41 citations·filing 2017–2024
93Inventor score
Files withSANDISK TECHNOLOGIES LLC16WESTERN DIGITAL TECH INC7GLOBALFOUNDRIES SG PTE LTD5EVERSPIN TECHNOLOGIES INC4
Top patents by PatentIndex Score
32 records- 0197US11398262B1Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 26, 2022·5 cites·20 claims
- 0293US11972787B2Cross-point array refresh schemeSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·2 cites·14 claims
- 0393US10777248B1Heat assisted perpendicular spin transfer torque MRAM memory cellWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 15, 2020·5 cites·18 claims
- 0492US11289171B1Multi-level ultra-low power inference engine acceleratorSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 29, 2022·3 cites·20 claims
- 0592US11152047B2Magnetoresistive random access memory containing multilayer synthetic antiferromagnetic structure and method of making thereofWESTERN DIGITAL TECH INC·Filed 2019·Granted Oct 19, 2021·5 cites·17 claims
- 0690US11972822B2Programmable ECC for MRAM mixed-read schemeSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·2 cites·19 claims
- 0790US10839897B1Set/reset methods for crystallization improvement in phase change memoriesSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 17, 2020·9 cites·19 claims
- 0886US11978491B2Mixed current-forced read scheme for MRAM array with selectorSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 7, 2024·1 cites·18 claims
- 0985US11894037B2First fire and cold start in memories with threshold switching selectorsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·1 cites·20 claims
- 1085US10516096B2Magnetic random access memory structures, integrated circuits, and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 24, 2019·2 cites·18 claims
- 1183US10468171B1Integrated circuits with magnetic tunnel junctions and methods of producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 5, 2019·2 cites·17 claims
- 1274US2025063953A1Magnetoresistive stack and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1371US11688446B2Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 1471US11682442B2Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 1570US12300296B2Cross-point array refresh schemeSANDISK TECHNOLOGIES LLC·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1670US10255961B2Data storage in synthetic antiferromagnets included in magnetic tunnel junctionsEVERSPIN TECHNOLOGIES INC·Filed 2017·Granted Apr 9, 2019·2 cites·20 claims
- 1769US10868245B1Phase change memory device with crystallization template and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 15, 2020·2 cites·18 claims
- 1867US12327040B2Fast self-referenced read of programmable resistance memory cellsSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 1962US2025040155A1Cross-point ovonic memory device having different size electrodes and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2061US10825500B2Data storage in synthetic antiferromagnets included in magnetic tunnel junctionsEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Nov 3, 2020·0 cites·20 claims
- 2159US12477955B2Magnetoresistive stack and methods thereforEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Nov 18, 2025·0 cites·13 claims
- 2259US11081174B2Set/reset methods for crystallization improvement in phase change memoriesSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 3, 2021·0 cites·20 claims
- 2357US12093812B2Ultralow power inference engine with external magnetic field programming assistanceSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 17, 2024·0 cites·19 claims
- 2455US2025040150A1Cross-point ovonic frustum memory device and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2554US2024379142A1Multi-time programmable memory devices and methodsWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2652US10446205B1Magnetic random access memory structures, integrated circuits, and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Oct 15, 2019·0 cites·20 claims
- 2751US2025308568A1Read for memory cell with threshold switching selectorSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2849US2025210083A1Apparatus and methods for managing selector device threshold voltage driftWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2949US2025210085A1Apparatus and methods for managing selector device threshold voltage driftWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3044US12148459B2Cross-point array IHOLD read margin improvementSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 3144US2020033425A1Encapsulated magnetic tunnel junction (mtj) structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Application pending·0 cites
- 3241US10593866B2Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Mar 17, 2020·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →