Inventor · disambiguated record
Min-Chuan Tsai
Also filed as: TSAI MIN-CHUAN
28 granted patents·9 pending applications·102 citations·filing 2011–2018
95Inventor score
Top patents by PatentIndex Score
37 records- 0193US9679813B2Semiconductor structure and process for forming plug including layer with pulled back sidewall partUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 13, 2017·9 cites·8 claims
- 0292US8836049B2Semiconductor structure and process thereofTSAI MIN-CHUAN·Filed 2012·Granted Sep 16, 2014·29 cites·12 claims
- 0390US10199269B2Conductive structure and method for manufacturing conductive structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 5, 2019·6 cites·10 claims
- 0490US9166020B2Metal gate structure and manufacturing method thereofYANG CHAN-LON·Filed 2011·Granted Oct 20, 2015·11 cites·8 claims
- 0589US9640482B1Semiconductor device with a contact plug and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 2, 2017·6 cites·20 claims
- 0687US9018086B2Semiconductor device having a metal gate and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 28, 2015·7 cites·5 claims
- 0786US9887158B1Conductive structure having an entrenched high resistive layerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 6, 2018·5 cites·11 claims
- 0885US8735269B1Method for forming semiconductor structure having TiN layerUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 27, 2014·7 cites·14 claims
- 0977US9755047B2Semiconductor process and semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 5, 2017·2 cites·3 claims
- 1077US8802524B2Method of manufacturing semiconductor device having metal gatesLIAO PO-JUI·Filed 2011·Granted Aug 12, 2014·5 cites·20 claims
- 1177US8691681B2Semiconductor device having a metal gate and fabricating method thereofHSU CHI-MAO·Filed 2012·Granted Apr 8, 2014·4 cites·13 claims
- 1276US9735015B1Fabricating method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 15, 2017·2 cites·19 claims
- 1374US8860135B2Semiconductor structure having aluminum layer with high reflectivityHSU CHI-MAO·Filed 2012·Granted Oct 14, 2014·3 cites·5 claims
- 1466US8872286B2Metal gate structure and fabrication method thereofCHENG TSUN-MIN·Filed 2011·Granted Oct 28, 2014·3 cites·8 claims
- 1565US9478628B1Metal gate forming processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 25, 2016·1 cites·16 claims
- 1664US9570348B2Method of forming contact strucutreUNITED MICROELECTRONICS CORP·Filed 2015·Granted Feb 14, 2017·1 cites·11 claims
- 1761US9281374B2Metal gate structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 8, 2016·1 cites·15 claims
- 1858US10497617B2Conductive structure and method for manufacturing conductive structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·0 cites·9 claims
- 1955US10199228B2Manufacturing method of metal gate structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 5, 2019·0 cites·8 claims
- 2055US10068797B2Semiconductor process for forming plugUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 4, 2018·0 cites·12 claims
- 2154US9558996B2Method for filling trench with metal layer and semiconductor structure formed by using the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jan 31, 2017·0 cites·9 claims
- 2254US9130032B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 2354US9076784B2Transistor and semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 7, 2015·0 cites·5 claims
- 2453US10192826B2Conductive layout structure including high resistive layerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 29, 2019·0 cites·8 claims
- 2553US9985110B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 29, 2018·0 cites·9 claims
- 2652US9653300B2Structure of metal gate structure and manufacturing method of the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 16, 2017·0 cites·7 claims
- 2748US2015380512A1Metal gate structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2847US8841733B2Semiconductor device and method of fabricating the sameHUANG HSIN-FU·Filed 2011·Granted Sep 23, 2014·0 cites·4 claims
- 2941US8975666B2MOS transistor and process thereofHSIEH YA-HSUEH·Filed 2012·Granted Mar 10, 2015·0 cites·20 claims
- 3041US2015061042A1Metal gate structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3140US2014239419A1Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 3239US2014120711A1Method of forming metal gateUNITED MICROELECTRONICS CORP·Filed 2012·Application pending·0 cites
- 3336US2012261770A1Metal gate structureLIN KUN-HSIEN·Filed 2011·Application pending·0 cites
- 3436US2012319179A1Metal gate and fabrication method thereofHUANG HSIN-FU·Filed 2011·Application pending·0 cites
- 3536US2012326243A1Transistor having aluminum metal gate and method of making the sameHUANG HSIN-FU·Filed 2011·Application pending·0 cites
- 3635US2012256275A1Metal gate structure and manufacturing method thereofHUANG HSIN-FU·Filed 2011·Application pending·0 cites
- 3732US2016336269A1Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →