Inventor · disambiguated record
Min-Hsuan Tsai
Also filed as: TSAI MIN-HSUAN
11 granted patents·1 pending application·34 citations·filing 2008–2023
84Inventor score
Files withUNITED MICROELECTRONICS CORP7FOXCONN KUNSHAN COMPUTER CONNECTOR CO LTD2HSU MING-SHUN1NAT UNIV CHUNG CHENG1TSAI MIN-HSUAN1
Top patents by PatentIndex Score
12 records- 0186US9196723B1High voltage semiconductor devices with Schottky diodesUNITED MICROELECTRONICS CORP·Filed 2014·Granted Nov 24, 2015·12 cites·13 claims
- 0286US7728388B1Power semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 1, 2010·15 cites·17 claims
- 0369US8836067B2Transistor device and manufacturing method thereofHSU MING-SHUN·Filed 2012·Granted Sep 16, 2014·4 cites·14 claims
- 0468US12506290B2Electrical connector with improved terminal modulesFOXCONN KUNSHAN COMPUTER CONNECTOR CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·14 claims
- 0566US11735657B2Method for fabricating transistor structureUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 22, 2023·0 cites·9 claims
- 0665US8878329B2High voltage device having Schottky diodeTSAI MIN-HSUAN·Filed 2010·Granted Nov 4, 2014·3 cites·5 claims
- 0763US12438309B2Electrical connector with improved inserting memberFOXCONN KUNSHAN COMPUTER CONNECTOR CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 0861US11417761B1Transistor structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Aug 16, 2022·0 cites·9 claims
- 0951US9214549B2High voltage device having Schottky diodeUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 15, 2015·0 cites·6 claims
- 1050US2009277792A1Method for concentrating charged particles and apparatus thereofNAT UNIV CHUNG CHENG·Filed 2009·Application pending·0 cites
- 1148US10431655B2Transistor structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 1, 2019·0 cites·20 claims
- 1233US9508813B1High-side field effect transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →