Inventor · disambiguated record
Ming-Chang Wen
Also filed as: WEN MING · WEN MING-CHANG
41 granted patents·18 pending applications·86 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD49VMWARE INC3WANG HSIEN-CHENG2IND TECH RES INST1Liou Yu-Cing1
Top patents by PatentIndex Score
59 records- 0197US10319581B1Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 11, 2019·14 cites·20 claims
- 0295US11508623B2Local gate height tuning by CMP and dummy gate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·3 cites·20 claims
- 0394US11817354B2Local gate height tuning by cmp and dummy gate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0494US11107902B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·8 cites·20 claims
- 0591US11387322B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 0690US12336235B2Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·1 cites·14 claims
- 0790US11140090B2Analyzing flow group attributes using configuration tagsVMWARE INC·Filed 2019·Granted Oct 5, 2021·13 cites·17 claims
- 0890US2025308882A1Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0988US11315933B2SRAM structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·4 cites·20 claims
- 1086US12374542B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1185US11342444B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 1283US12349393B2Semiconductor device transistor having multiple channels with different widths and materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 1383US12243782B2Local gate height tuning by CMP and dummy gate designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1483US12009266B2Structure for fringing capacitance controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 11, 2024·2 cites·20 claims
- 1583US10901771B2Methods and systems for securely and efficiently clustering distributed processes using a consistent databaseVMWARE INC·Filed 2019·Granted Jan 26, 2021·4 cites·19 claims
- 1683US2024347623A1Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1783US2025294798A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1880US11721544B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 1980US10741450B2Semiconductor device having a metal gate and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 2080US2025338588A1Specialized transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2179US12051735B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2279US2025366127A1Semiconductor Structure With Modified Spacer And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2378US11177180B2Profile control of a gap fill structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·1 cites·20 claims
- 2478US9000525B2Structure and method for alignment marksWEN MING-CHANG·Filed 2010·Granted Apr 7, 2015·5 cites·20 claims
- 2578US2025204017A1Local Gate Height Tuning by CMP And Dummy Gate DesignTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2677US11901237B2Semiconductor device having cut gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2777US2024304497A1Structure for fringing capacitance controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US12020989B2Structure for fringing capacitance controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 2976US2024363423A1Profile control of a gap fill structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3076US2024397690A1Sram structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3175US11916110B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 3274US2025275195A1Manufacturing method of semiconductor device having isolation structure formed of low-k dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3373US11239072B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 3473US10868003B2Creating devices with multiple threshold voltages by cut-metal-gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 3573US7649024B2Process for preparing nanofluids with rotating packed bed reactorIND TECH RES INST·Filed 2005·Granted Jan 19, 2010·16 cites·17 claims
- 3672US10978351B2Etch stop layer between substrate and isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 13, 2021·1 cites·20 claims
- 3772US10163738B2Structure and method for overlay marksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·1 cites·20 claims
- 3871US12057349B2Profile control of a gap fill structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·20 claims
- 3971US11948842B2Etch stop layer between substrate and isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 4071US10461078B2Creating devices with multiple threshold voltage by cut-metal-gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
- 4171US2025063791A1Specialized transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4270US12156394B2SRAM structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 4370US11437278B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 4468US11121128B2Structure and method for alignment marksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 4567US8416393B2Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two aperturesWANG HSIEN-CHENG·Filed 2009·Granted Apr 9, 2013·2 cites·19 claims
- 4667US2023187535A1Semiconductor structure with modified spacer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4766US10651030B2Cut metal gate process for reducing transistor spacingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·0 cites·20 claims
- 4865US9543406B2Structure and method for overlay marksWANG HSIEN-CHENG·Filed 2011·Granted Jan 10, 2017·1 cites·20 claims
- 4963US10991628B2Etch stop layer between substrate and isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 5061US2025374601A1Semiconductor Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →