Inventor · disambiguated record
Michael Wojtowicz
Also filed as: WOJTOWICZ MICHAEL
11 granted patents·2 pending applications·148 citations·filing 1999–2013
89Inventor score
Top patents by PatentIndex Score
13 records- 0192US6515316B1Partially relaxed channel HEMT deviceTRW INC·Filed 2000·Granted Feb 4, 2003·93 cites·9 claims
- 0289US8575657B2Direct growth of diamond in backside vias for GaN HEMT devicesGAMBIN VINCENT·Filed 2012·Granted Nov 5, 2013·18 cites·20 claims
- 0377US8026132B2Leakage barrier for GaN based HEMT active deviceNORTHROP GRUMMAN SYSTEMS CORP·Filed 2008·Granted Sep 27, 2011·6 cites·6 claims
- 0465US6245687B1Precision wide band gap semiconductor etchingTRW INC·Filed 2000·Granted Jun 12, 2001·11 cites·9 claims
- 0564US7041579B2Hard substrate wafer sawing processNORTHROP GRUMMAN CORP·Filed 2003·Granted May 9, 2006·10 cites·18 claims
- 0661US7608865B1Club extension to a T-gate high electron mobility transistorNORTHROP GRUMMAN SPACE & MSN·Filed 2008·Granted Oct 27, 2009·1 cites·12 claims
- 0754US6710379B2Fully relaxed channel HEMT deviceNORTHROP GRUMMAN CORP·Filed 2003·Granted Mar 23, 2004·6 cites·2 claims
- 0844US8809137B2Leakage barrier for GaN based HEMT active deviceSANDHU RAJINDER RANDY·Filed 2011·Granted Aug 19, 2014·0 cites·18 claims
- 0942US8809907B2Leakage barrier for GaN based HEMT active deviceSANDHU RAJINDER RANDY·Filed 2006·Granted Aug 19, 2014·0 cites·13 claims
- 1039US2008251891A1Semiconductor having passivated sidewallsCHOU YEONG-CHANG·Filed 2007·Application pending·0 cites
- 1132US9048184B2Method of forming a gate contactNAMBA CAROL O·Filed 2013·Granted Jun 2, 2015·0 cites·16 claims
- 1231US6528829B1Integrated circuit structure having a charge injection barrierTRW INC·Filed 1999·Granted Mar 4, 2003·3 cites·8 claims
- 1330US2002149033A1GaN HBT superlattice base structureFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →