Inventor · disambiguated record
Ming Yang
Also filed as: YANG MING · YANG MING T · YANG MING-TZUNG
14 granted patents·1 pending application·325 citations·filing 1992–2003
94Inventor score
Top patents by PatentIndex Score
15 records- 0182US6605540B2Process for forming a dual damascene structureTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 12, 2003·30 cites·12 claims
- 0282US6277720B1Silicon nitride dopant diffusion barrier in integrated circuitsTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 21, 2001·70 cites·15 claims
- 0378US5554550AMethod of fabricating electrically eraseable read only memory cell having a trenchUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 10, 1996·39 cites·15 claims
- 0476US6803273B1Method to salicide source-line in flash memory with STITEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 12, 2004·19 cites·14 claims
- 0576US5393702AVia sidewall SOG nitridation for via fillingUNITED MICROELECTRONICS CORP·Filed 1993·Granted Feb 28, 1995·58 cites·11 claims
- 0670US5763020AProcess for evenly depositing ions using a tilting and rotating platformUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jun 9, 1998·29 cites·10 claims
- 0760US7112532B2Process for forming a dual damascene structureTEXAS INSTRUMENTS INC·Filed 2003·Granted Sep 26, 2006·8 cites·11 claims
- 0860US5512507AProcess for post metal coding of a ROM, by gate etchUNITED MICROELECTRONICS CORP·Filed 1994·Granted Apr 30, 1996·20 cites·17 claims
- 0957US5759282AProcess for evenly depositing ions using a tilting and rotating platformUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jun 2, 1998·16 cites·2 claims
- 1054US5914279ASilicon nitride sidewall and top surface layer separating conductorsTEXAS INSTRUMENTS INC·Filed 1997·Granted Jun 22, 1999·19 cites·15 claims
- 1147US5264386ARead only memory manufacturing methodUNITED MICROELECTRONICS CORP·Filed 1992·Granted Nov 23, 1993·10 cites·11 claims
- 1244US6930049B2Endpoint control for small open area by RF source parameter VdcTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 16, 2005·1 cites·6 claims
- 1338US2003186549A1Endpoint control for small open area by RF source parameter VdcTEXAS INSTRUMENTS INC·Filed 2003·Application pending·0 cites
- 1430US5972796AIn-situ barc and nitride etch processTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 26, 1999·5 cites·4 claims
- 1528US6274481B1Process sequence to improve DRAM data retentionTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 14, 2001·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →