Inventor · disambiguated record
Ming-Hua Yu
Also filed as: YU MING · YU MING-HUA
120 granted patents·47 pending applications·785 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD139TAIWAN SEMICONDUCTOR MFG15YU MING-HUA5BASF SE1CHENG YU-HUNG1
Top patents by PatentIndex Score
167 records- 0199US8963258B2FinFET with bottom SiGe layer in source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·342 cites·20 claims
- 0298US11444181B2Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·3 cites·20 claims
- 0397US11916071B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0497US9768178B2Semiconductor device, static random access memory cell and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·11 cites·20 claims
- 0597US7868317B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 11, 2011·51 cites·24 claims
- 0697US7554110B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 30, 2009·48 cites·29 claims
- 0796US11948971B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·3 cites·20 claims
- 0896US10490552B2FinFET device having flat-top epitaxial features and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 26, 2019·16 cites·20 claims
- 0995US10269655B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·12 cites·20 claims
- 1095US9825036B2Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·9 cites·20 claims
- 1195US7781799B2Source/drain strained layersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 24, 2010·26 cites·12 claims
- 1295US7494884B2SiGe selective growth without a hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·36 cites·20 claims
- 1394US10026843B2Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 17, 2018·7 cites·20 claims
- 1493US10510753B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1593US9831345B2FinFET with rounded source/drain profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 28, 2017·13 cites·20 claims
- 1693US9293581B2FinFET with bottom SiGe layer in source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·8 cites·20 claims
- 1792US11101347B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
- 1892US10515858B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·5 cites·20 claims
- 1992US8377784B2Method for fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 19, 2013·12 cites·19 claims
- 2091US11769771B2FinFET device having flat-top epitaxial features and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·1 cites·20 claims
- 2191US10164096B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·5 cites·20 claims
- 2291US2025331222A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2390US12369342B2Increasing source/drain dopant concentration to reduced resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2490US10658468B2Epitaxial growth methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 2590US8846461B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 30, 2014·8 cites·17 claims
- 2690US8344447B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 1, 2013·13 cites·11 claims
- 2790US2025338609A1Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2889US11037826B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·2 cites·20 claims
- 2989US10355105B2Fin field-effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·4 cites·20 claims
- 3089US9601574B2V-shaped epitaxially formed semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·7 cites·20 claims
- 3189US8927374B2Semiconductor device and fabrication method thereofSU LILLY·Filed 2011·Granted Jan 6, 2015·10 cites·20 claims
- 3289US8049277B2Epitaxy silicon on insulator (ESOI)TAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·8 cites·17 claims
- 3389US7803690B2Epitaxy silicon on insulator (ESOI)TAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 28, 2010·13 cites·20 claims
- 3489US2024397692A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3588US12426358B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 3687US10546784B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·3 cites·20 claims
- 3787US9054130B2Bottle-neck recess in a semiconductor devicePENG ERIC·Filed 2010·Granted Jun 9, 2015·9 cites·20 claims
- 3887US8835267B2Semiconductor device and fabrication method thereofLEE YEN-RU·Filed 2011·Granted Sep 16, 2014·9 cites·20 claims
- 3987US2024297252A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4086US12154974B2Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 4186US12062710B2Increasing source/drain dopant concentration to reduced resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 4286US11489074B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 4386US10749029B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 4486US8530316B2Method for fabricating a semiconductor deviceCHENG YU-HUNG·Filed 2013·Granted Sep 10, 2013·6 cites·20 claims
- 4586US8274071B2MOS devices with partial stressor channelYU MING-HUA·Filed 2011·Granted Sep 25, 2012·7 cites·23 claims
- 4685US12408367B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 4785US11211477B2FinFETs having epitaxial capping layer on fin and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 4885US8168501B2Source/drain strained layersYU MING-HUA·Filed 2011·Granted May 1, 2012·6 cites·20 claims
- 4985US2024387702A1Source/drain formation with reduced selective loss defectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5084US11315837B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·1 cites·20 claims
Showing the top 50 of 167 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →