Inventor · disambiguated record
Mohammad Hasanuzzaman
Also filed as: HASANUZZAMAN MOHAMMAD
4 granted patents·5 pending applications·14 citations·filing 2014–2024
68Inventor score
Top patents by PatentIndex Score
9 records- 0186US9685334B1Methods of forming semiconductor fin with carbon dopant for diffusion controlGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·6 cites·19 claims
- 0284US9196712B1FinFET extension regionsIBM·Filed 2014·Granted Nov 24, 2015·6 cites·11 claims
- 0368US9431485B2Formation of finFET junctionGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·2 cites·16 claims
- 0459US2025204002A1Source/drain extension with spacer layersIBM·Filed 2023·Application pending·0 cites
- 0558US2025351492A1Channel optimization for nanosheet technologyIBM·Filed 2024·Application pending·0 cites
- 0658US2025275204A1Gate-all-around field effect transistor with variable channel geometriesIBM·Filed 2024·Application pending·0 cites
- 0752US2024213325A1Producing stress in nanosheet transistor channelsIBM·Filed 2022·Application pending·0 cites
- 0838US9748235B2Gate stack for integrated circuit structure and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·0 cites·20 claims
- 0935US2019019862A1Coalesced fin to reduce fin bendingGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Mohammad Hasanuzzaman files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →