Inventor · disambiguated record
Motoaki Iwaya
Also filed as: IWAYA MOTOAKI
20 granted patents·18 pending applications·51 citations·filing 2005–2025
91Inventor score
Top patents by PatentIndex Score
38 records- 0195US9437775B2Nitride semiconductor light-emitting deviceUNIV MEIJO·Filed 2014·Granted Sep 6, 2016·20 cites·8 claims
- 0283US9716209B2Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting deviceUNIV MEIJO·Filed 2016·Granted Jul 25, 2017·5 cites·5 claims
- 0379US7855385B2SiC crystal and semiconductor deviceUNIV MEIJO·Filed 2008·Granted Dec 21, 2010·4 cites·9 claims
- 0478US8941136B2Semiconductor light emitting elementKAMIYAMA SATOSHI·Filed 2010·Granted Jan 27, 2015·3 cites·16 claims
- 0575US7985964B2Light-emitting semiconductor deviceUNIV MEIJO·Filed 2008·Granted Jul 26, 2011·5 cites·1 claims
- 0675US7612381B2Method for fabricating a semiconductor device and semiconductor deviceUNIV MEIJO·Filed 2007·Granted Nov 3, 2009·6 cites·1 claims
- 0774US2025151463A1Semiconductor light-emitting device including a plurality of columnar semiconductorsTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 0872US7732826B2Semiconductor and method of semiconductor fabricationKAMIYAMA SATOSHI·Filed 2006·Granted Jun 8, 2010·5 cites·8 claims
- 0970US10734225B2Nitride semiconductor substrate and method for manufacturing sameASAHI CHEMICAL IND·Filed 2017·Granted Aug 4, 2020·1 cites·20 claims
- 1064US2024421259A1Light emitting deviceTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 1163US12439735B2Semiconductor device and method for producing semiconductor deviceTOYODA GOSEI KK·Filed 2022·Granted Oct 7, 2025·0 cites·8 claims
- 1262US10593831B2Nitride semiconductor multilayer film reflector and light-emitting device using the sameUNIV MEIJO·Filed 2014·Granted Mar 17, 2020·1 cites·10 claims
- 1362US2025122643A1Method for producing group iii nitride semiconductorTOYODA GOSEI KK·Filed 2024·Application pending·0 cites
- 1462US2022285580A1Semiconductor Light-Emitting DeviceTOYTODA GOSEI CO LTD·Filed 2022·Application pending·0 cites
- 1560US2024113174A1Laminate and method of manufacturing laminateJAPAN DISPLAY INC·Filed 2023·Application pending·0 cites
- 1659US2015091039A1Semiconductor light emitting elementEL SEED CORP·Filed 2014·Application pending·0 cites
- 1759US2024072101A1Led arraySHARP KK·Filed 2023·Application pending·0 cites
- 1859US2024421142A1Light-emitting device, display device, wearable device, and method of manufacturing light-emitting deviceSHARP KK·Filed 2024·Application pending·0 cites
- 1958US2020144451A1Nitride semiconductor crystal and method of fabricating the sameUNIV MEIJO·Filed 2020·Application pending·0 cites
- 2056US9029174B2Method for manufacturing semiconductor deviceIWAYA MOTOAKI·Filed 2011·Granted May 12, 2015·1 cites·14 claims
- 2156US2021313760A1Method for manufacturing semiconductor laser diode and semiconductor laser diodeASAHI CHEMICAL IND·Filed 2021·Application pending·0 cites
- 2255US12020930B2Nitride semiconductor elementASAHI CHEMICAL IND·Filed 2021·Granted Jun 25, 2024·0 cites·20 claims
- 2355US2025248172A1Group iii nitride semiconductor and production method thereforTOYODA GOSEI KK·Filed 2025·Application pending·0 cites
- 2455US2025253622A1Nitride semiconductor light emitting element and method for producing nitride semiconductor light emitting elementUNIV MEIJO·Filed 2023·Application pending·0 cites
- 2554US2022246789A1Semiconductor device and method for producing semiconductor deviceTOYODA GOSEI KK·Filed 2022·Application pending·0 cites
- 2654US2025183623A1Method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting elementUNIV MEIJO·Filed 2023·Application pending·0 cites
- 2753US11462659B2Semiconductor light emitting device and manufacturing method of semiconductor light emitting deviceKOITO MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·18 claims
- 2853US2017155016A9Nitride semiconductor crystal and method of fabricating the sameUNIV MEIJO·Filed 2014·Application pending·0 cites
- 2948US11088512B2Nitride semiconductor elementASAHI CHEMICAL IND·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 3048US2021375614A1Nitride semiconductor elementASAHI CHEMICAL IND·Filed 2021·Application pending·0 cites
- 3148US2009166674A1Ultraviolet light receiving elementUNIV MEIJO·Filed 2006·Application pending·0 cites
- 3245US7756189B2Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting elementUNIV MEIJO·Filed 2007·Granted Jul 13, 2010·0 cites·7 claims
- 3342US10833223B2Group III nitride semiconductor light-emitting device and production method thereforTOYODA GOSEI KK·Filed 2018·Granted Nov 10, 2020·0 cites·15 claims
- 3442US10424684B2MSM ultraviolet ray receiving element, MSM ultraviolet ray receiving deviceASAHI CHEMICAL IND·Filed 2018·Granted Sep 24, 2019·0 cites·20 claims
- 3541US9666753B2Nitride semiconductor light emitting device and method of fabricating the sameUNIV MEIJO·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 3640US9099597B2Light emitting diode element with porous SiC emitting by donor acceptor pairKAMIYAMA SATOSHI·Filed 2010·Granted Aug 4, 2015·0 cites·9 claims
- 3737US9847449B2Nitride semiconductor light-emitting device with periodic gain active layersUNIV MEIJO·Filed 2015·Granted Dec 19, 2017·0 cites·6 claims
- 3834US2006043396A1Sapphire substrate, epitaxial substrate and semiconductor deviceKYOCERA CORP·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →