Inventor · disambiguated record
Moon-Sig Joo
Also filed as: JOO MOON SIG
25 granted patents·12 pending applications·172 citations·filing 1997–2016
96Inventor score
Files withHYNIX SEMICONDUCTOR INC18SK HYNIX INC8HYUNDAI ELECTRONICS IND2JOO MOON SIG2WHANG SUNG-JIN2
Top patents by PatentIndex Score
37 records- 0194US8331149B23D nonvolatile memory device and method for fabricating the sameCHOI WON-JOON·Filed 2010·Granted Dec 11, 2012·34 cites·23 claims
- 0293US8692314B2Non-volatile memory device and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Apr 8, 2014·14 cites·9 claims
- 0391US8349689B2Non-volatile memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Jan 8, 2013·12 cites·16 claims
- 0490US9406678B2Method and gate structure for threshold voltage modulation in transistorsSK HYNIX INC·Filed 2014·Granted Aug 2, 2016·11 cites·15 claims
- 0590US9299704B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Mar 29, 2016·9 cites·17 claims
- 0686US9159768B2Semiconductor device and electronic device including the sameSK HYNIX INC·Filed 2013·Granted Oct 13, 2015·6 cites·18 claims
- 0786US7955960B2Nonvolatile memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 7, 2011·12 cites·22 claims
- 0884US7595240B2Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Sep 29, 2009·10 cites·19 claims
- 0981US8692223B2Resistance variable memory device including nano particles and method for fabricating the sameMOON JI-WON·Filed 2012·Granted Apr 8, 2014·5 cites·14 claims
- 1081US7928493B2Nonvolatile memory device with multiple blocking layers and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Apr 19, 2011·6 cites·8 claims
- 1176US8048743B2Method for fabricating vertical channel type nonvolatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 1, 2011·3 cites·16 claims
- 1276US8039337B2Nonvolatile memory device with multiple blocking layers and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2011·Granted Oct 18, 2011·3 cites·14 claims
- 1375US8241974B2Nonvolatile memory device with multiple blocking layers and method of fabricating the sameCHO HEUNG-JAE·Filed 2011·Granted Aug 14, 2012·3 cites·15 claims
- 1471US9275904B2Method for fabricating semiconductor deviceWHANG SUNG-JIN·Filed 2009·Granted Mar 1, 2016·3 cites·12 claims
- 1569US8399323B2Method for fabricating vertical channel type nonvolatile memory deviceLEE KI-HONG·Filed 2011·Granted Mar 19, 2013·1 cites·10 claims
- 1669US7948025B2Non-volatile memory device having charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 24, 2011·3 cites·5 claims
- 1768US8105909B2Method of fabricating non-volatile memory deviceJOO MOON SIG·Filed 2010·Granted Jan 31, 2012·2 cites·16 claims
- 1867US7736975B2Method for manufacturing non-volatile memory device having charge trap layerHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 15, 2010·3 cites·9 claims
- 1965US7981786B2Method of fabricating non-volatile memory device having charge trapping layerHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 19, 2011·3 cites·18 claims
- 2056US9293337B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Mar 22, 2016·0 cites·7 claims
- 2156US8847300B2Semiconductor device and method for fabricating the sameWHANG SUNG-JIN·Filed 2009·Granted Sep 30, 2014·0 cites·14 claims
- 2256US7824992B2Method of fabricating non-volatile memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 2, 2010·0 cites·9 claims
- 2356US6365467B1Method of forming gate oxide layer in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 2, 2002·20 cites·13 claims
- 2455US2013137228A1Method for fabricating vertical channel type nonvolatile memory deviceSK HYNIX INC·Filed 2013·Application pending·0 cites
- 2555US2013130454A1Method for fabricating vertical channel type nonvolatile memory deviceSK HYNIX INC·Filed 2013·Application pending·0 cites
- 2650US2010012998A1Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 2747US2009108334A1Charge Trap Device and Method for Fabricating the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 2846US2016181159A1Method for fabricating semiconductor deviceSK HYNIX INC·Filed 2016·Application pending·0 cites
- 2945US8294200B2Non-volatile memory deviceJOO MOON SIG·Filed 2011·Granted Oct 23, 2012·0 cites·4 claims
- 3045US2008272424A1Nonvolatile Memory Device Having Fast Erase Speed And Improved Retention Characteristics And Method For Fabricating The SameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 3144US2009325369A1Semiconductor device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3243US2011204430A1Nonvolatile memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 3342US2009114977A1Nonvolatile memory device having charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3442US2009108332A1Non-volatile memory device with charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3540US5985738AMethod for forming field oxide of semiconductor device using wet and dry oxidationHYUNDAI ELECTRONICS IND·Filed 1997·Granted Nov 16, 1999·9 cites·10 claims
- 3640US2008093661A1Non-volatile memory device having a charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 3730US2001034090A1Methods for forming a gate dielectric film of a semiconductor deviceFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →