Inventor · disambiguated record
Moris Kori
Also filed as: KORI MORIS
21 granted patents·4 pending applications·1,177 citations·filing 1996–2009
97Inventor score
Files withAPPLIED MATERIALS INC25
Top patents by PatentIndex Score
25 records- 0199US6551929B1Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·396 cites·60 claims
- 0298US7465666B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·47 cites·33 claims
- 0398US7235486B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 26, 2007·43 cites·39 claims
- 0497US7674715B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 9, 2010·35 cites·25 claims
- 0597US7465665B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·43 cites·20 claims
- 0697US7115494B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·30 cites·54 claims
- 0796US7846840B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2009·Granted Dec 7, 2010·19 cites·22 claims
- 0896US7709385B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2008·Granted May 4, 2010·33 cites·20 claims
- 0996US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 1096US7220673B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2006·Granted May 22, 2007·29 cites·38 claims
- 1196US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 1295US6855368B1Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2000·Granted Feb 15, 2005·58 cites·15 claims
- 1394US7101795B1Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layerAPPLIED MATERIALS INC·Filed 2000·Granted Sep 5, 2006·50 cites·14 claims
- 1492US7384867B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jun 10, 2008·16 cites·48 claims
- 1591US7033922B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2004·Granted Apr 25, 2006·30 cites·26 claims
- 1691US6849545B2System and method to form a composite film stack utilizing sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2001·Granted Feb 1, 2005·54 cites·49 claims
- 1791US6729824B2Dual robot processing systemAPPLIED MATERIALS INC·Filed 2001·Granted May 4, 2004·59 cites·45 claims
- 1882US6040011ASubstrate support member with a purge gas channel and pumping systemAPPLIED MATERIALS INC·Filed 1998·Granted Mar 21, 2000·61 cites·38 claims
- 1969US6174373B1Non-plasma halogenated gas flow prevent metal residuesAPPLIED MATERIALS INC·Filed 2000·Granted Jan 16, 2001·7 cites·17 claims
- 2050US6070599ANon-plasma halogenated gas flow to prevent metal residuesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·10 cites·14 claims
- 2144US2004209465A1Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layerAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 2243US2004013803A1Formation of titanium nitride films using a cyclical deposition processAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 2337US2003049931A1Formation of refractory metal nitrides using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2436US2003073304A1Selective tungsten stud as copper diffusion barrier to silicon contactAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2533US5709772ANon-plasma halogenated gas flow to prevent metal residuesAPPLIED MATERIALS INC·Filed 1996·Granted Jan 20, 1998·2 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →