Inventor · disambiguated record
Mohammed Radwan
Also filed as: RADWAN MOHAMMED
3 granted patents·1 pending application·3 citations·filing 2011–2015
55Inventor score
Technology areasH10P
Top patents by PatentIndex Score
4 records- 0158US9111999B2Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics by modified RF power ramp-upGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 18, 2015·1 cites·14 claims
- 0258US8492279B2Method of controlling critical dimensions of vias in a metallization system of a semiconductor device during silicon-ARC etchRADWAN MOHAMMED·Filed 2011·Granted Jul 23, 2013·2 cites·20 claims
- 0338US9018102B2Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics by modified RF power ramp-upRADWAN MOHAMMED·Filed 2012·Granted Apr 28, 2015·0 cites·10 claims
- 0427US2012028376A1Method of Controlling Critical Dimensions of Trenches in a Metallization System of a Semiconductor Device During Etch of an Etch Stop LayerRADWAN MOHAMMED·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →