Inventor · disambiguated record
Murat Kerem Akarvardar
Also filed as: AKARVARDAR MURAT · AKARVARDAR MURAT K · AKARVARDAR MURAT KEREM
58 granted patents·27 pending applications·357 citations·filing 2013–2025
98Inventor score
Top patents by PatentIndex Score
85 records- 0198US9929157B1Tall single-fin fin-type field effect transistor structures and methodsGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 27, 2018·37 cites·13 claims
- 0298US9343300B1Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel regionGLOBALFOUNDRIES INC·Filed 2015·Granted May 17, 2016·45 cites·18 claims
- 0397US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 0497US9165837B1Method to form defect free replacement fins by H2 annealGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 20, 2015·35 cites·20 claims
- 0596US9576857B1Method and structure for SRB elastic relaxationGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 21, 2017·14 cites·9 claims
- 0694US9287130B1Method for single fin cuts using selective ion implantsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 15, 2016·12 cites·23 claims
- 0794US9147616B1Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 29, 2015·16 cites·14 claims
- 0893US9601383B1FinFET fabrication by forming isolation trenches prior to fin formationGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·9 cites·20 claims
- 0993US9117875B2Methods of forming isolated germanium-containing fins for a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 25, 2015·14 cites·20 claims
- 1093US9006077B2Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETsGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 14, 2015·14 cites·19 claims
- 1192US9385233B2Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxideGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 5, 2016·10 cites·11 claims
- 1292US9324617B1Methods of forming elastically relaxed SiGe virtual substrates on bulk siliconGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 26, 2016·9 cites·25 claims
- 1392US9224865B2FinFET with insulator under channelGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 29, 2015·13 cites·9 claims
- 1492US2025357306A1Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1591US9564486B2Self-aligned dual-height isolation for bulk FinFETIBM·Filed 2015·Granted Feb 7, 2017·7 cites·13 claims
- 1691US9252245B1Spacer-last replacement metal gate flow and deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 2, 2016·14 cites·20 claims
- 1789US10297597B2Composite isolation structures for a fin-type field effect transistorGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·5 cites·6 claims
- 1889US9716174B2Electrical isolation of FinFET active region by selective oxidation of sacrificial layerGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 25, 2017·10 cites·9 claims
- 1986US9570588B2Methods of forming transistor structures including forming channel material after formation processes to prevent damage to the channel materialGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 14, 2017·4 cites·19 claims
- 2086US9293587B2Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·7 cites·20 claims
- 2185US10062617B2Method and structure for SRB elastic relaxationGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·3 cites·4 claims
- 2285US9362361B1Methods of forming elastically relaxed SiGe virtual substrates on bulk siliconGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·5 cites·25 claims
- 2385US8963259B2Device isolation in finFET CMOSGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 24, 2015·5 cites·3 claims
- 2485US2024387351A1Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2584US12431423B2Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2683US9245980B2Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 26, 2016·6 cites·16 claims
- 2782US9847333B2Reducing risk of punch-through in FinFET semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·4 cites·12 claims
- 2881US9589849B2Methods of modulating strain in PFET and NFET FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·3 cites·19 claims
- 2981US9530869B2Methods of forming embedded source/drain regions on finFET devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 27, 2016·3 cites·22 claims
- 3080US9842897B2Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxideGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 12, 2017·2 cites·7 claims
- 3180US9515088B1High density and modular CMOS logic based on 3D stacked, independent-gate, junctionless FinFETsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 6, 2016·3 cites·20 claims
- 3280US9324618B1Methods of forming replacement fins for a FinFET deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 26, 2016·3 cites·23 claims
- 3379US9324790B2Self-aligned dual-height isolation for bulk FinFETIBM·Filed 2013·Granted Apr 26, 2016·4 cites·12 claims
- 3479US9305846B2Device isolation in FinFET CMOSGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 5, 2016·2 cites·14 claims
- 3578US9425315B2FinFET semiconductor device with isolated fins made of alternative channel materialsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·2 cites·7 claims
- 3677US9406803B2FinFET device including a uniform silicon alloy finGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·2 cites·20 claims
- 3777US2025356890A1System and method for improving efficiency of multi-storage-row compute-in-memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3875US9882052B2Forming defect-free relaxed SiGe finsGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 30, 2018·2 cites·15 claims
- 3975US9508848B1Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable materialGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·2 cites·21 claims
- 4075US9502507B1Methods of forming strained channel regions on FinFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 22, 2016·2 cites·25 claims
- 4174US11735515B2Method for low-cost, high-bandwidth monolithic system integration beyond reticle limitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 4273US9240342B2Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth processGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 19, 2016·2 cites·12 claims
- 4372US10411010B2Tall single-fin FIN-type field effect transistor structures and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 10, 2019·1 cites·20 claims
- 4468US9312387B2Methods of forming FinFET devices with alternative channel materialsGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 12, 2016·2 cites·20 claims
- 4568US2025258710A1Artificial intelligence accelerator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4666US12293229B2Artificial intelligence accelerator deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 4765US9184162B2FinFET integrated circuits and methods for their fabricationGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 10, 2015·1 cites·19 claims
- 4864US9190411B2Retrograde doped layer for device isolationGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 17, 2015·1 cites·20 claims
- 4964US2025124956A1Three dimensional memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5063US9881830B2Electrically insulated fin structure(s) with alternative channel materials and fabrication methodsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 30, 2018·1 cites·14 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →