Inventor · disambiguated record
Muhammad Masuduzzaman
Also filed as: MASUDUZZAMAN MUHAMMAD
27 granted patents·5 pending applications·96 citations·filing 2014–2024
93Inventor score
Files withSANDISK TECHNOLOGIES LLC20PURDUE RESEARCH FOUNDATION4SANDISK TECHNOLOGIES INC4WESTERN DIGITAL TECH INC4
Top patents by PatentIndex Score
32 records- 0197US10014063B2Smart skip verify mode for programming a memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 3, 2018·43 cites·20 claims
- 0295US11139038B1Neighboring or logical minus word line dependent verify with sense time in programming of non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 5, 2021·4 cites·20 claims
- 0395US9842657B1Multi-state program using controlled weak boosting for non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 12, 2017·28 cites·20 claims
- 0493US11475967B1Modified verify in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 18, 2022·4 cites·20 claims
- 0590US10312342B2NEMS devices with series ferroelectric negative capacitorPURDUE RESEARCH FOUNDATION·Filed 2017·Granted Jun 4, 2019·4 cites·8 claims
- 0688US9779832B1Pulsed control line biasing in memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·7 cites·17 claims
- 0776US9711211B2Dynamic threshold voltage compaction for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 0870US9755041B2NEMS devices with series ferroelectric negative capacitorPURDUE RESEARCH FOUNDATION·Filed 2015·Granted Sep 5, 2017·1 cites·12 claims
- 0962US10984876B2Temperature based programming in memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 20, 2021·1 cites·19 claims
- 1060US12327046B2Data retention-specific refresh readWESTERN DIGITAL TECH INC·Filed 2021·Granted Jun 10, 2025·0 cites·20 claims
- 1159US11776634B2Pulsed bias for power-up or read recoveryWESTERN DIGITAL TECH INC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 1258US12079496B2Bundle multiple timing parameters for fast SLC programmingSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 1358US11830555B2Bias for data retention in fuse ROM and flash memoryWESTERN DIGITAL TECH INC·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 1454US12462876B2Single-level cell pump skip program operation preliminary period timing optimization for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1554US12057168B2Neighbor aware multi-bias programming in scaled BICSSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 6, 2024·0 cites·6 claims
- 1654US11574693B2Memory apparatus and method of operation using periodic normal erase dummy cycle to improve stripe erase endurance and data retentionSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 1753US2025372177A1Non-volatile memory with location dependent bitline voltage during program-verify for current sensing compensationSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1852US12354704B2Active current consumption save mode for non-volatile memory using fast programmingWESTERN DIGITAL TECH INC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1952US12205657B2Hybrid smart verify for QLC/TLC dieSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 21, 2025·0 cites·9 claims
- 2052US12112800B2High speed multi-level cell (MLC) programming in non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2152US2025285688A1Non-volatile memory with program-verify at common voltageSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 2251US11417393B2Two-stage programming using variable step voltage (DVPGM) for non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 16, 2022·0 cites·20 claims
- 2350US11887677B2Quick pass write programming techniques in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 2449US11322213B2Enhanced multistate verify techniques in a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 2548US12142315B2Low power multi-level cell (MLC) programming in non-volatile memory structuresSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 12, 2024·0 cites·18 claims
- 2647US11423993B2Bi-directional sensing in a memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 23, 2022·0 cites·20 claims
- 2747US11081184B2Method of concurrent multi-state programming of non-volatile memory with bit line voltage step upSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 3, 2021·0 cites·17 claims
- 2846US12057175B2Memory apparatus and method of operation using state dependent strobe tier scan to reduce peak ICCSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Aug 6, 2024·0 cites·17 claims
- 2946US10217520B2Pulsed control line biasing in memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 26, 2019·0 cites·20 claims
- 3044US2015124514A1Lifetime of Ferroelectric DevicesPURDUE RESEARCH FOUNDATION·Filed 2014·Application pending·0 cites
- 3140US2016379702A1Increasing lifetime of ferroelectric devicesPURDUE RESEARCH FOUNDATION·Filed 2016·Application pending·0 cites
- 3240US2021134369A1Method for concurrent programmingSANDISK TECHNOLOGIES LLC·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →