Inventor · disambiguated record
Mujahid Muhammad
Also filed as: MUHAMMAD MUJAHID
49 granted patents·7 pending applications·337 citations·filing 2003–2023
98Inventor score
Top patents by PatentIndex Score
56 records- 0198US9818542B2Gate-all-around fin deviceIBM·Filed 2015·Granted Nov 14, 2017·19 cites·12 claims
- 0298US9590108B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 7, 2017·20 cites·12 claims
- 0398US9397163B2Gate-all-around fin deviceIBM·Filed 2015·Granted Jul 19, 2016·19 cites·9 claims
- 0498US9281379B1Gate-all-around fin deviceIBM·Filed 2014·Granted Mar 8, 2016·31 cites·19 claims
- 0597US9923096B2Gate-all-around fin deviceIBM·Filed 2017·Granted Mar 20, 2018·12 cites·12 claims
- 0696US9911852B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 6, 2018·8 cites·14 claims
- 0795US10381483B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·5 cites·12 claims
- 0895US10147822B2Gate-all-around fin deviceIBM·Filed 2017·Granted Dec 4, 2018·5 cites·10 claims
- 0995US10090400B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·6 cites·8 claims
- 1095US9978874B2Gate-all-around fin deviceIBM·Filed 2017·Granted May 22, 2018·6 cites·20 claims
- 1194US10573754B2Gate-all around fin deviceIBM·Filed 2017·Granted Feb 25, 2020·4 cites·11 claims
- 1294US10090301B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·4 cites·8 claims
- 1394US9041127B2FinFET device technology with LDMOS structures for high voltage operationsIBM·Filed 2013·Granted May 26, 2015·19 cites·16 claims
- 1493US10658514B2Gate-all-around fin deviceIBM·Filed 2018·Granted May 19, 2020·2 cites·20 claims
- 1592US10381484B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·3 cites·12 claims
- 1691US8576526B2Reduced current leakage in RC ESD clampsCHU ALBERT M·Filed 2012·Granted Nov 5, 2013·10 cites·18 claims
- 1790US8169760B2Signal and power supply integrated ESD protection deviceCHANG SHUNHUA T·Filed 2009·Granted May 1, 2012·22 cites·27 claims
- 1889US10636872B1Apparatus and method to prevent integrated circuit from entering latch-up modeGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 28, 2020·4 cites·20 claims
- 1987US10974433B2Gate-all-around fin deviceIBM·Filed 2019·Granted Apr 13, 2021·1 cites·12 claims
- 2087US10593805B2Gate-all-around fin deviceIBM·Filed 2019·Granted Mar 17, 2020·1 cites·11 claims
- 2187US9236374B2Fin contacted electrostatic discharge (ESD) devices with improved heat distributionIBM·Filed 2014·Granted Jan 12, 2016·8 cites·19 claims
- 2286US8299533B2Vertical NPNP structure in a triple well CMOS processCAMPI JR JOHN B·Filed 2010·Granted Oct 30, 2012·8 cites·24 claims
- 2385US10388793B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 20, 2019·1 cites·16 claims
- 2485US8803276B2Electrostatic discharge (ESD) device and method of fabricatingIBM·Filed 2013·Granted Aug 12, 2014·6 cites·13 claims
- 2585US8760827B2Robust ESD protection circuit, method and design structure for tolerant and failsafe designsCAMPI JR JOHN B·Filed 2009·Granted Jun 24, 2014·12 cites·25 claims
- 2685US7203045B2High voltage ESD power clampIBM·Filed 2004·Granted Apr 10, 2007·30 cites·9 claims
- 2784US7098513B2Low trigger voltage, low leakage ESD NFETIBM·Filed 2005·Granted Aug 29, 2006·11 cites·20 claims
- 2883US8643987B2Current leakage in RC ESD clampsCHU ALBERT M·Filed 2012·Granted Feb 4, 2014·6 cites·18 claims
- 2981US8354722B2SCR/MOS clamp for ESD protection of integrated circuitsIBM·Filed 2011·Granted Jan 15, 2013·6 cites·23 claims
- 3081US8350329B2Low trigger voltage electrostatic discharge NFET in triple well CMOS technologyIBM·Filed 2010·Granted Jan 8, 2013·6 cites·16 claims
- 3180US8730624B2Electrostatic discharge power clamp with a JFET based RC trigger circuitCHANG SHUNHUA T·Filed 2011·Granted May 20, 2014·5 cites·12 claims
- 3280US8597993B2Electrostatic discharge (ESD) device and method of fabricatingCHANG SHUNHUA·Filed 2008·Granted Dec 3, 2013·8 cites·13 claims
- 3379US8796731B2Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structureABOU-KHALIL MICHEL J·Filed 2010·Granted Aug 5, 2014·5 cites·23 claims
- 3478US8513738B2ESD field-effect transistor and integrated diffusion resistorCAMPI JR JOHN B·Filed 2011·Granted Aug 20, 2013·5 cites·26 claims
- 3575US11141902B2Gate-all-around fin deviceIBM·Filed 2019·Granted Oct 12, 2021·0 cites·13 claims
- 3675US11130270B2Gate-all-around fin deviceIBM·Filed 2019·Granted Sep 28, 2021·0 cites·12 claims
- 3773US10940627B2Gate-all-around fin deviceIBM·Filed 2018·Granted Mar 9, 2021·0 cites·13 claims
- 3873US10770594B2Gate-all-around fin deviceIBM·Filed 2018·Granted Sep 8, 2020·0 cites·8 claims
- 3969US7457086B2High voltage ESD power clampIBM·Filed 2006·Granted Nov 25, 2008·3 cites·2 claims
- 4068US7138313B2Method for creating a self-aligned SOI diode by removing a polysilicon gate during processingIBM·Filed 2004·Granted Nov 21, 2006·13 cites·20 claims
- 4167US8614489B2Vertical NPNP structure in a triple well CMOS processCAMPI JOHN B·Filed 2012·Granted Dec 24, 2013·2 cites·19 claims
- 4260US8634172B2Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structureCAMPI JR JOHN B·Filed 2010·Granted Jan 21, 2014·1 cites·22 claims
- 4358US12353817B2Pcell verificationGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 4455US9059278B2High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift regionIBM·Filed 2013·Granted Jun 16, 2015·0 cites·7 claims
- 4551US9349732B2High voltage lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) having a deep fully depleted drain drift regionIBM·Filed 2015·Granted May 24, 2016·0 cites·6 claims
- 4651US8363367B2Electrical overstress protection circuitIBM·Filed 2009·Granted Jan 29, 2013·0 cites·21 claims
- 4751US2025006650A1Machine-readable code in integrated circuitGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 4850US2016197080A1High voltage lateral double-diffused metal oxide semiconductor field effect transistor (ldmosfet) having a deep fully depleted drain drift regionGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 4949US2024242013A1Trusted parameterized cells (pcells) on blockchainGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 5045US10283959B2ESD state-controlled semiconductor-controlled rectifierIBM·Filed 2014·Granted May 7, 2019·0 cites·15 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →