Inventor · disambiguated record
Myung Gil Kang
Also filed as: KANG MYUNG GIL
61 granted patents·26 pending applications·155 citations·filing 2011–2025
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD80INST OF SCIENCE AND TECHNOLOGY KOREA ADVANCED1KANG MYUNG GIL1KOREA ADVANCED INST SCI & TECH1OH CHANG-WOO1
Top patents by PatentIndex Score
87 records- 0197US11444081B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 13, 2022·3 cites·20 claims
- 0297US11362182B2Semiconductor device including superlattice patternSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 14, 2022·14 cites·18 claims
- 0397US11329039B2Integrated circuit including integrated standard cell structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 10, 2022·4 cites·20 claims
- 0496US10297601B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 21, 2019·19 cites·19 claims
- 0595US12294005B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 6, 2025·1 cites·17 claims
- 0695US11923362B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 5, 2024·1 cites·20 claims
- 0795US11489055B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 1, 2022·3 cites·20 claims
- 0894US9324850B2Integrated circuit devices and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·15 cites·14 claims
- 0993US11676964B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 13, 2023·1 cites·20 claims
- 1093US10930649B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·5 cites·19 claims
- 1192US11804530B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 31, 2023·2 cites·20 claims
- 1292US9870957B2Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFETSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·9 cites·15 claims
- 1390US11069818B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·5 cites·20 claims
- 1490US11024628B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·5 cites·18 claims
- 1590US10978299B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 1690US9490177B2Integrated circuit devices including stress proximity effects and methods of fabricating the sameOH CHANG-WOO·Filed 2012·Granted Nov 8, 2016·14 cites·37 claims
- 1787US10833085B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 10, 2020·4 cites·20 claims
- 1887US9673099B2Method of fabricating integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 6, 2017·4 cites·5 claims
- 1986US9966376B2Semiconductor devices and inverter having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 8, 2018·6 cites·16 claims
- 2086US8941155B2Fin field effect transistors including multiple lattice constants and methods of fabricating the sameKANG MYUNG GIL·Filed 2012·Granted Jan 27, 2015·14 cites·18 claims
- 2184US2025072053A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2283US2025120149A1Semiconductor device including superlattice patternSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2383US2025393266A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2482US12166081B2Semiconductor device-including source and drain regions and superlattice pattern having a pillar shapeSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2582US9520458B2Resistor formed using resistance patterns and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 13, 2016·5 cites·20 claims
- 2681US10622476B2Vertical field effect transistor having two-dimensional channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 14, 2020·3 cites·19 claims
- 2780US12183800B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2880US9653551B2Field effect transistors including fin structures with different doped regions and semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·4 cites·19 claims
- 2980US2025374671A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3079US11862639B2Semiconductor device having a plurality of channel layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·19 claims
- 3178US11769813B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 3278US10410931B2Fabricating method of nanosheet transistor spacer including inner spacerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 10, 2019·2 cites·17 claims
- 3377US11482606B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 3476US9014707B2Apparatus and method for hierarchical rate splitting in hierarchical cell communication systemSHIN WON JAE·Filed 2011·Granted Apr 21, 2015·4 cites·26 claims
- 3575US11777001B2Semiconductor device including superlattice patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 3672USRE49988EIntegrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 28, 2024·0 cites·44 claims
- 3772US11437377B2Method of manufacturing semiconductor device having a plurality of channel layersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·7 claims
- 3871US12199163B2Semiconductor device and method of fabricating the same where semiconductor device includes high-k dielectric layer that does not extend between inhibition layer and side of gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 3969US12446277B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 4069US10312156B2Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFETSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·1 cites·7 claims
- 4168US11855165B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·19 claims
- 4267US12432992B2Semiconductor device including source/drain patternsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 4365US12426308B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 4465US11990534B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 21, 2024·0 cites·19 claims
- 4565US11695002B2Integrated circuit including integrated standard cell structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 4, 2023·0 cites·20 claims
- 4665US11450761B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 4764US11742411B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·19 claims
- 4863US11710741B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·14 claims
- 4962US12453125B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 21, 2025·0 cites·20 claims
- 5062US12274085B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·13 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Myung Gil Kang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →