Inventor · disambiguated record
Myoung-Bum Lee
Also filed as: LEE MYOUNG · LEE MYOUNG K · LEE MYOUNG-BUM · LEE MYOUNG-KI
31 granted patents·11 pending applications·397 citations·filing 1994–2014
97Inventor score
Top patents by PatentIndex Score
42 records- 0191US8923057B2Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrateSON YONG-HOON·Filed 2010·Granted Dec 30, 2014·13 cites·17 claims
- 0290US9343475B2Vertical memory devices and methods of manufacturing the sameJANG KYUNG-TAE·Filed 2014·Granted May 17, 2016·19 cites·15 claims
- 0390US8916922B2Vertical memory devices and methods of manufacturing the sameJANG KYUNG-TAE·Filed 2012·Granted Dec 23, 2014·13 cites·28 claims
- 0490US7723755B2Semiconductor having buried word line cell structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 25, 2010·18 cites·12 claims
- 0590US6432820B1Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 13, 2002·43 cites·33 claims
- 0687US9184178B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·7 cites·17 claims
- 0785US6787468B2Method of fabricating metal lines in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 7, 2004·40 cites·3 claims
- 0881US7646067B2Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 12, 2010·8 cites·4 claims
- 0980US8536652B2Non-volatile memory devices including low-K dielectric gaps in substratesLEE BO-YOUNG·Filed 2011·Granted Sep 17, 2013·5 cites·6 claims
- 1079US6586340B2Wafer processing apparatus and wafer processing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 1, 2003·19 cites·19 claims
- 1177US6573147B2Method of forming a semiconductor device having contact using crack-protecting layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 3, 2003·19 cites·17 claims
- 1275US7585756B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·6 cites·6 claims
- 1375US6849555B2Wafer processing apparatus and wafer processing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·15 cites·39 claims
- 1475US6602782B2Methods for forming metal wiring layers and metal interconnects and metal interconnects formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 5, 2003·18 cites·36 claims
- 1575US5656337AMethod of forming a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Aug 12, 1997·54 cites·11 claims
- 1674US9040378B2Methods of forming semiconductor devices including vertical channels and semiconductor devices formed using such methodsLEE BO-YOUNG·Filed 2014·Granted May 26, 2015·3 cites·20 claims
- 1769US6010940AMethods for fabricating CVD TiN barrier layers for capacitor structuresSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 4, 2000·37 cites·5 claims
- 1868US7800162B2Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·4 cites·18 claims
- 1966US8564046B2Vertical semiconductor devicesKIM JIN-GYUN·Filed 2011·Granted Oct 22, 2013·2 cites·15 claims
- 2065US5742472AStacked capacitors for integrated circuit devices and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 21, 1998·25 cites·28 claims
- 2164US6858529B2Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorusSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·9 cites·32 claims
- 2259US6399457B2Semiconductor device having capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 4, 2002·5 cites·8 claims
- 2353US6699790B2Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminumSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 2, 2004·5 cites·7 claims
- 2449US7211769B2Heating chamber and method of heating a waferSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 1, 2007·2 cites·19 claims
- 2549US7176533B2Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorusSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·2 cites·14 claims
- 2648US7790591B2Methods of manufacturing semiconductor devices including metal oxide layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·0 cites·9 claims
- 2745US9299826B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 29, 2016·0 cites·19 claims
- 2845US7696563B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·0 cites·16 claims
- 2945US2005287299A1Method and apparatus using large-area organic vapor deposition for formation of organic thin films or organic devicesAHN SEONG D·Filed 2005·Application pending·0 cites
- 3045US2008032512A1Method forming silicon oxynitride gate dielectric layer with uniform nitrogen concentrationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3144US2012064682A1Methods of Manufacturing Three-Dimensional Semiconductor Memory DevicesJANG KYUNG-TAE·Filed 2011·Application pending·0 cites
- 3243US2004149211A1Systems including heated shower heads for thin film deposition and related methodsFiled 2003·Application pending·0 cites
- 3343US2009321810A1Non-volatile memory device, memory card and systemSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3441US2002160602A1Method for forming metal wiring layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 3539US2012007165A1Semiconductor devicesLEE MYOUNG-BUM·Filed 2011·Application pending·0 cites
- 3639US2004062862A1Method and apparatus using large-area organic vapor deposition for formation of organic thin films or organic devicesFiled 2003·Application pending·0 cites
- 3738US2015137259A1Semiconductor deviceHAN HAUK·Filed 2014·Application pending·0 cites
- 3837US2011237055A1Methods of Manufacturing Stacked Semiconductor DevicesSON YONG-HOON·Filed 2011·Application pending·0 cites
- 3936US2002132469A1Method for forming metal wiring layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
- 4035US5560778AApparatus for forming a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Oct 1, 1996·5 cites·2 claims
- 4132US6953741B2Methods of fabricating contacts for semiconductor devices utilizing a pre-flow processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 11, 2005·0 cites·14 claims
- 4231US6261890B1Semiconductor device having capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 17, 2001·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →