Assignee
SON YONG-HOON
KR·23 granted patents·10 pending applications·221 citations·filing 2005–2017
Top patents by PatentIndex Score
33 records- 0197US8236650B2Vertical-type non-volatile memory devices and methods of manufacturing the sameSON YONG-HOON·Filed 2010·Granted Aug 7, 2012·27 cites·13 claims
- 0296US8063438B2Vertical-type semiconductor devicesSON YONG-HOON·Filed 2009·Granted Nov 22, 2011·30 cites·12 claims
- 0394US9997534B2Vertical memory devicesSON YONG HOON·Filed 2016·Granted Jun 12, 2018·14 cites·19 claims
- 0494US8492828B2Vertical-type non-volatile memory devicesSON YONG-HOON·Filed 2012·Granted Jul 23, 2013·15 cites·20 claims
- 0594US8450176B2Methods of manufacturing rewriteable three-dimensional semiconductor memory devicesSON YONG-HOON·Filed 2010·Granted May 28, 2013·24 cites·14 claims
- 0693US9997538B2Semiconductor device including channel structureSON YONG HOON·Filed 2017·Granted Jun 12, 2018·10 cites·20 claims
- 0792US8236673B2Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materialsSON YONG-HOON·Filed 2011·Granted Aug 7, 2012·14 cites·20 claims
- 0891US9356033B2Three-dimensional semiconductor memory devices and methods of forming the sameSON YONG-HOON·Filed 2015·Granted May 31, 2016·7 cites·16 claims
- 0991US8923057B2Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrateSON YONG-HOON·Filed 2010·Granted Dec 30, 2014·13 cites·17 claims
- 1091US8482049B2Semiconductor devices and methods for fabricating the sameSON YONG-HOON·Filed 2010·Granted Jul 9, 2013·23 cites·24 claims
- 1191US8304318B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSON YONG-HOON·Filed 2011·Granted Nov 6, 2012·9 cites·10 claims
- 1289US9929179B2Nonvolatile semiconductor devices including non-circular shaped channel patterns and methods of manufacturing the sameSON YONG HOON·Filed 2017·Granted Mar 27, 2018·5 cites·20 claims
- 1384US8455316B2Method of manufacturing vertical semiconductor deviceSON YONG-HOON·Filed 2011·Granted Jun 4, 2013·6 cites·18 claims
- 1479US10079203B2Vertical memory devices and methods of manufacturing the sameSON YONG HOON·Filed 2016·Granted Sep 18, 2018·3 cites·15 claims
- 1579US8063441B2Vertical type semiconductor deviceSON YONG-HOON·Filed 2009·Granted Nov 22, 2011·6 cites·18 claims
- 1678US8309417B2Vertical-type semiconductor devices and methods of manufacturing the sameSON YONG-HOON·Filed 2011·Granted Nov 13, 2012·2 cites·16 claims
- 1777US8507918B2Multilayer semiconductor devices with channel patterns having a graded grain structureSON YONG-HOON·Filed 2011·Granted Aug 13, 2013·4 cites·12 claims
- 1877US8338873B2Semiconductor memory device including active pillars and gate patternSON YONG-HOON·Filed 2010·Granted Dec 25, 2012·4 cites·14 claims
- 1970US8552491B2Semiconductor devices semiconductor pillars and method of fabricating the sameSON YONG-HOON·Filed 2010·Granted Oct 8, 2013·2 cites·20 claims
- 2062US10559580B2Semiconductor memory deviceSON YONG HOON·Filed 2016·Granted Feb 11, 2020·2 cites·19 claims
- 2162US8324056B2Vertical type semiconductor device and method of manufacturing a vertical type semiconductor deviceSON YONG-HOON·Filed 2011·Granted Dec 4, 2012·1 cites·11 claims
- 2253US8101509B2Semiconductor integrated circuit deviceSON YONG-HOON·Filed 2011·Granted Jan 24, 2012·0 cites·5 claims
- 2351US8481416B2Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSON YONG-HOON·Filed 2011·Granted Jul 9, 2013·0 cites·20 claims
- 2451US2010078698A1Vertical semiconductor device, dram device including the sameSON YONG-HOON·Filed 2009·Application pending·0 cites
- 2550US2007163489A1Method of forming a layer having a single crystalline structureSON YONG-HOON·Filed 2007·Application pending·0 cites
- 2647US2012032250A1Semiconductor devicesSON YONG-HOON·Filed 2011·Application pending·0 cites
- 2746US2005248035A1Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSON YONG-HOON·Filed 2005·Application pending·0 cites
- 2845US2008217689A1Semiconductor devices having silicon-on-insulator (soi) substrates and methods of manufacturing the sameSON YONG-HOON·Filed 2008·Application pending·0 cites
- 2945US2011205816A1Vertical type semiconductor device, method of manufacturing a vertical type semiconductor device and method of operating a vertical semiconductor deviceSON YONG-HOON·Filed 2011·Application pending·0 cites
- 3044US2011248327A1Three-Dimensional Semiconductor Memory Devices and Methods of Forming the SameSON YONG-HOON·Filed 2011·Application pending·0 cites
- 3140US2011233631A1Vertically stacked fusion semiconductor deviceSON YONG-HOON·Filed 2011·Application pending·0 cites
- 3237US2011298038A1Three dimensional semiconductor deviceSON YONG-HOON·Filed 2011·Application pending·0 cites
- 3337US2011237055A1Methods of Manufacturing Stacked Semiconductor DevicesSON YONG-HOON·Filed 2011·Application pending·0 cites
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