Inventor · disambiguated record
Nadia Ben Mohamed
Also filed as: BEN MOHAMED NADIA · CATTET-GUERRINI LEGAL REPRESENTATIVE GUILLAUME
26 granted patents·10 pending applications·74 citations·filing 2003–2024
93Inventor score
Files withSOITEC SILICON ON INSULATOR30COMMISSARIAT ENERGIE ATOMIQUE2BEN MOHAMED NADIA1CATTET SEBASTIEN1MALEVILLE CHRISTOPHE1
Top patents by PatentIndex Score
36 records- 0188US7749862B2Methods for minimizing defects when transferring a semiconductor useful layerSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jul 6, 2010·14 cites·17 claims
- 0284US7326628B2Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughnessSOITEC SILICON ON INSULATOR·Filed 2005·Granted Feb 5, 2008·18 cites·16 claims
- 0378US9425081B2Method of implantation for fragilization of substratesSOITEC SILICON ON INSULATOR·Filed 2013·Granted Aug 23, 2016·7 cites·13 claims
- 0476US7514341B2Finishing process for the manufacture of a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2006·Granted Apr 7, 2009·8 cites·16 claims
- 0573US2024222158A1System for fracturing a plurality of wafer assembliesSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 0672US2025015122A1Structure for a front-facing image sensorSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 0767US8349703B2Method of bonding two substratesSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 8, 2013·2 cites·15 claims
- 0867US7485545B2Method of configuring a process to obtain a thin layer with a low density of holesSOITEC SILICON ON INSULATOR·Filed 2006·Granted Feb 3, 2009·4 cites·18 claims
- 0966US11670540B2Substrates including useful layersSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jun 6, 2023·0 cites·18 claims
- 1066US8003493B2Method of splitting a substrateSOITEC SILICON ON INSULATOR·Filed 2008·Granted Aug 23, 2011·3 cites·11 claims
- 1166US7081399B2Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantationsSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jul 25, 2006·14 cites·26 claims
- 1263US12002690B2System for fracturing a plurality of wafer assembliesSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jun 4, 2024·0 cites·20 claims
- 1356US12100727B2Method for manufacturing a substrate for a front-facing image sensorSOITEC SILICON ON INSULATOR·Filed 2019·Granted Sep 24, 2024·0 cites·18 claims
- 1454US9887124B2Method for producing a composite structureSOITEC SILICON ON INSULATOR·Filed 2014·Granted Feb 6, 2018·1 cites·17 claims
- 1554US2025137928A1Method for monitoring embrittlement of an interface between a substrate and layer and a device enabling such monitoringCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1652US10950491B2Method for transferring a useful layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 16, 2021·0 cites·18 claims
- 1752US2025210410A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1852US2025201625A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1951US8247309B2Controlled temperature implantationCATTET SEBASTIEN·Filed 2009·Granted Aug 21, 2012·2 cites·14 claims
- 2051US2025391704A1Method for transferring a thin layer onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 2150US12142517B2Method for transferring a useful layer from a donor substrate onto a support substrate by applying a predetermined stressSOITEC SILICON ON INSULATOR·Filed 2020·Granted Nov 12, 2024·0 cites·20 claims
- 2250US12002697B2Method for detecting the splitting of a substrate weakened by implanting atomic speciesSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jun 4, 2024·0 cites·20 claims
- 2348US11881429B2Method for transferring a useful layer onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jan 23, 2024·0 cites·20 claims
- 2445US11424156B2Removable structure and removal method using the structureSOITEC SILICON ON INSULATOR·Filed 2019·Granted Aug 23, 2022·0 cites·20 claims
- 2545US2006223283A1Method for producing a high quality useful layer on a substrateMALEVILLE CHRISTOPHE·Filed 2006·Application pending·0 cites
- 2645US2015221545A1Method for reducing surface roughness while producing a high quality useful layerSOITEC SILICON ON INSULATOR·Filed 2015·Application pending·0 cites
- 2744US12469743B2Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portionSOITEC SILICON ON INSULATOR·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
- 2844US11876015B2Method for transferring a useful layer to a carrier substrateSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jan 16, 2024·0 cites·18 claims
- 2944US11276605B2Process for smoothing the surface of a semiconductor-on-insulator substrateSOITEC SILICON ON INSULATOR·Filed 2018·Granted Mar 15, 2022·0 cites·18 claims
- 3044US7465645B2Method of detaching a layer from a wafer using a localized starting areaSOITEC SILICON ON INSULATOR·Filed 2004·Granted Dec 16, 2008·1 cites·16 claims
- 3143US2024357937A1Method for transferring a useful layer to a front face of carrier substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 3242US11114314B2Method for fabrication of a semiconductor structure including an interposer free from any through viaSOITEC SILICON ON INSULATOR·Filed 2017·Granted Sep 7, 2021·0 cites·18 claims
- 3341US2006040470A1Methods for minimizing defects when transferring a semiconductor useful layerBEN MOHAMED NADIA·Filed 2004·Application pending·0 cites
- 3440US9922867B2Method for transferring a useful layerSOITEC SILICON ON INSULATOR·Filed 2016·Granted Mar 20, 2018·0 cites·18 claims
- 3538US9589830B2Method for transferring a useful layerSOITEC SILICON ON INSULATOR·Filed 2015·Granted Mar 7, 2017·0 cites·21 claims
- 3637US8088671B2Defectivity of post thin layer separation by modification of its separation annealingSCHWARZENBACH WALTER·Filed 2008·Granted Jan 3, 2012·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →