Inventor · disambiguated record
Nathan Franklin
Also filed as: FRANKLIN NATHAN · FRANKLIN NATHAN R
37 granted patents·10 pending applications·849 citations·filing 1998–2024
97Inventor score
Files withSANDISK TECHNOLOGIES LLC19INTEL CORP10UNIV LELAND STANFORD JUNIOR4NANOCHIP INC2PRINTPACK ILLINOIS INC2
Top patents by PatentIndex Score
47 records- 0197US11488662B2Concurrent multi-bit access in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 1, 2022·5 cites·21 claims
- 0297US11398262B1Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 26, 2022·5 cites·20 claims
- 0397US6232706B1Self-oriented bundles of carbon nanotubes and method of making sameUNIV LELAND STANFORD JUNIOR·Filed 1998·Granted May 15, 2001·616 cites·23 claims
- 0496US11222678B1MRAM cross-point memory with reversed MRAM element vertical orientationSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 11, 2022·6 cites·20 claims
- 0596US6900580B2Self-oriented bundles of carbon nanotubes and method of making sameUNIV LELAND STANFORD JUNIOR·Filed 2001·Granted May 31, 2005·102 cites·20 claims
- 0695US10545692B2Memory maintenance operations during refresh windowSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 28, 2020·13 cites·25 claims
- 0793US11972787B2Cross-point array refresh schemeSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 30, 2024·2 cites·14 claims
- 0890US11972822B2Programmable ECC for MRAM mixed-read schemeSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·2 cites·19 claims
- 0990US10885991B2Data rewrite during refresh windowSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 5, 2021·6 cites·18 claims
- 1090US9286975B2Mitigating read disturb in a cross-point memoryINTEL CORP·Filed 2014·Granted Mar 15, 2016·18 cites·12 claims
- 1187US11386945B2Signal amplification in MRAM during reading, including a pair of complementary transistors connected to an array lineSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 1286US11978491B2Mixed current-forced read scheme for MRAM array with selectorSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 7, 2024·1 cites·18 claims
- 1384US7789291B2Packaging article and method with particular tearing slit arrangementPRINTPACK ILLINOIS INC·Filed 2008·Granted Sep 7, 2010·21 cites·25 claims
- 1482US9754683B2Method and system to obtain state confidence data using multistrobe read of a non-volatile memoryGOLDMAN MATTHEW·Filed 2012·Granted Sep 5, 2017·8 cites·27 claims
- 1580US8360643B2Package having a resealable pour spoutPRINTPACK ILLINOIS INC·Filed 2010·Granted Jan 29, 2013·8 cites·20 claims
- 1678US11328759B2Signal preserve in MRAM during readingSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 10, 2022·1 cites·20 claims
- 1778US8542531B2Charge equilibrium acceleration in a floating gate memory device via a reverse field pulseFRANKLIN NATHAN R·Filed 2010·Granted Sep 24, 2013·8 cites·20 claims
- 1877US12237010B2Concurrent multi-bit self-referenced read of programmable resistance memory cells in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 1974US12205638B2Concurrent write to programmable resistance memory cells in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 21, 2025·0 cites·18 claims
- 2074US7795607B2Current focusing memory architecture for use in electrical probe-based memory storageINTEL CORP·Filed 2006·Granted Sep 14, 2010·6 cites·33 claims
- 2174US7773493B2Probe-based storage deviceINTEL CORP·Filed 2006·Granted Aug 10, 2010·2 cites·21 claims
- 2271US11688446B2Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 2371US11682442B2Forced current access with voltage clamping in cross-point arraySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 2470US12300296B2Cross-point array refresh schemeSANDISK TECHNOLOGIES LLC·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2569US8264941B2Arrangement and method to perform scanning readout of ferroelectric bit chargesTRAN QUAN ANH·Filed 2007·Granted Sep 11, 2012·4 cites·31 claims
- 2668US9224465B2Cross-point memory bias schemeINTEL CORP·Filed 2014·Granted Dec 29, 2015·3 cites·19 claims
- 2766US11854592B2Signal amplification in MRAM during reading, including a pair of complementary transistors connected to an array lineSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2865US7183228B1Carbon nanotube growthUNIV LELAND STANFORD JUNIOR·Filed 2002·Granted Feb 27, 2007·6 cites·26 claims
- 2964US12376498B2SOT MRAM including MTJ and selector located on opposite sides of SOT layer and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 3064US9153320B2Programming memory cells using a program pulseINTEL CORP·Filed 2013·Granted Oct 6, 2015·2 cites·24 claims
- 3164US7750433B2Probe-based memoryINTEL CORP·Filed 2009·Granted Jul 6, 2010·0 cites·7 claims
- 3257US2025176192A1Sot mram including mtj and selector located on opposite sides of sot layer and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 3356US12475964B2Bypass buffer for worn out codewordsSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3454US2025384926A1Magnetoresistive memory devices including dual free layers and methods for making and operating the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 3553US2010085863A1Retuning of ferroelectric media built-in-biasNANOCHIP INC·Filed 2008·Application pending·0 cites
- 3653US2010068509A1Media having improved surface smoothness and methods for making the sameNANOCHIP INC·Filed 2008·Application pending·0 cites
- 3752US2013003521A1Arrangement and method to perform scanning readout of ferroelectric bit chargesINTEL CORP·Filed 2012·Application pending·0 cites
- 3850US8068405B2Ferroelectric memory and method in which polarity of domain of ferroelectric memory is determined using ratio of currentsMA QING·Filed 2007·Granted Nov 29, 2011·2 cites·20 claims
- 3950US2009001338A1Seek-and-scan probe memory devices with nanostructures for improved bit size and resistance contrast when reading and writing to phase-change mediaFRANKLIN NATHAN·Filed 2007·Application pending·0 cites
- 4049US2025322899A1Nonvolatile memory cell tracking using bloom filtersSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
- 4147US2008023839A9Molybdenum-based electrode with carbon nanotube growthUNIV LELAND STANFORD JUNIOR·Filed 2006·Application pending·0 cites
- 4246US2009168635A1Memory Media Including Domains HavingTrapped Charges at a Top Region ThereofTRAN QUAN ANH·Filed 2007·Application pending·0 cites
- 4344US12148459B2Cross-point array IHOLD read margin improvementSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 4444US9502108B2Programming memory cells using a program pulseINTEL CORP·Filed 2015·Granted Nov 22, 2016·0 cites·24 claims
- 4542US9530523B2Thermal disturb as heater in cross-point memoryINTEL CORP·Filed 2014·Granted Dec 27, 2016·0 cites·21 claims
- 4641US7498655B2Probe-based memoryINTEL CORP·Filed 2006·Granted Mar 3, 2009·0 cites·20 claims
- 4740US2005161750A1Molybdenum-based electrode with carbon nanotube growthFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →