Inventor · disambiguated record
Naveen Kaushik
Also filed as: KAUSHIK NAVEEN
14 granted patents·13 pending applications·9 citations·filing 2019–2025
85Inventor score
Top patents by PatentIndex Score
27 records- 0194US11456208B2Methods of forming apparatuses including air gaps between conductive lines and related apparatuses, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 27, 2022·5 cites·31 claims
- 0293US12137553B2Memory array and method used in forming a memory arrayMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 5, 2024·3 cites·29 claims
- 0384US2025338499A1Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methodsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0481US2025331182A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0574US2024371749A1Capacitor in a three-dimensional memory structureMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0673US2025024675A1Memory Array And Method Used In Forming A Memory ArrayMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0772US12154853B2Apparatuses including device structures including pillar structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Nov 26, 2024·0 cites·17 claims
- 0868US12389599B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 12, 2025·0 cites·56 claims
- 0968US12237259B2Electronic devices comprising multilevel bitlines, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 25, 2025·0 cites·28 claims
- 1068US11605588B2Memory device including data lines on multiple device levelsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 14, 2023·1 cites·9 claims
- 1167US12068240B2Capacitor in a three-dimensional memory structureMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 1267US11728263B2Integrated assemblies having conductive-shield-structures between linear-conductive-structuresMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 1367US2025210511A1Electronic devices comprising multilevel bitlines, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1466US2024405066A1Methods of controlling breakdown voltage in microelectronic devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1565US12356617B2Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 8, 2025·0 cites·18 claims
- 1664US11605589B2Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 14, 2023·0 cites·23 claims
- 1764US11302628B2Integrated assemblies having conductive-shield-structures between linear-conductive-structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 12, 2022·0 cites·40 claims
- 1861US12080756B2Altering breakdown voltages in gate devices and related methods and systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 3, 2024·0 cites·18 claims
- 1958US2024355391A1Memory Circuitry Comprising Strings Of Memory Cells And Method Used In Forming Memory Circuitry Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2058US2022036927A1Integrated Assemblies Having Void Regions Between Digit Lines and Conductive Structures, and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2156US2025359063A1Transistor with channel layer including heavily doped regionMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2252US2023268419A1Devices having a transistor with a modified channel regionLIU HAITAO·Filed 2022·Application pending·0 cites
- 2351US11195560B2Integrated assemblies having void regions between digit lines and conductive structures, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 7, 2021·0 cites·22 claims
- 2449US2023032177A1Electronic devices comprising multilevel bitlines, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2549US2024079059A1High voltage device and methodMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2648US2023276624A1Electronic devices including pillars including a memory material, and related memory devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2743US11515311B2Semiconductor structure formation at differential depthsMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 29, 2022·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →