Inventor · disambiguated record
Naoki Kitai
Also filed as: KITAI NAOKI
19 granted patents·140 citations·filing 2002–2015
95Inventor score
Files withRENESAS ELECTRONICS CORP7HITACHI ULSI SYS CO LTD4RENESAS TECH CORP4OSADA KENICHI3SHIDO TAIHEI1
Top patents by PatentIndex Score
19 records- 0196US6998674B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Feb 14, 2006·28 cites·6 claims
- 0293US7964484B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 21, 2011·14 cites·3 claims
- 0392US8797791B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 5, 2014·7 cites·2 claims
- 0490US7569881B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2008·Granted Aug 4, 2009·9 cites·18 claims
- 0589US7087942B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2005·Granted Aug 8, 2006·9 cites·12 claims
- 0685US7388238B2Semiconductor integrated circuit device with reduced leakage currentRENESAS TECH CORP·Filed 2006·Granted Jun 17, 2008·6 cites·14 claims
- 0783US7692943B2Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wellsRENESAS TECH CORP·Filed 2007·Granted Apr 6, 2010·8 cites·6 claims
- 0882US8437179B2Semiconductor integrated circuit device with reduced leakage currentOSADA KENICHI·Filed 2012·Granted May 7, 2013·3 cites·5 claims
- 0980US8031511B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2011·Granted Oct 4, 2011·6 cites·4 claims
- 1079US9111636B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 18, 2015·2 cites·6 claims
- 1178US6885057B2Semiconductor integrated circuit device with reduced leakage currentHITACHI ULSI SYS CO LTD·Filed 2002·Granted Apr 26, 2005·12 cites·8 claims
- 1277US7907435B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2005·Granted Mar 15, 2011·9 cites·8 claims
- 1374US9530485B2Semiconductor integrated circuit device with reduced leakage currentRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·1 cites·15 claims
- 1472US6977858B2Semiconductor deviceHITACHI ULSI SYS CO LTD·Filed 2003·Granted Dec 20, 2005·13 cites·9 claims
- 1570US8232589B2Semiconductor integrated circuit device with reduced leakage currentOSADA KENICHI·Filed 2012·Granted Jul 31, 2012·1 cites·16 claims
- 1670US8125017B2Semiconductor integrated circuit device with reduced leakage currentOSADA KENICHI·Filed 2011·Granted Feb 28, 2012·1 cites·12 claims
- 1767US8847431B2Semiconductor device including a pair of shield linesSHIDO TAIHEI·Filed 2011·Granted Sep 30, 2014·4 cites·15 claims
- 1865US7319603B2Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wellsRENESAS TECH CORP·Filed 2005·Granted Jan 15, 2008·2 cites·2 claims
- 1963US7907442B2Semiconductor integrated circuitRENESAS ELECTRONICS CORP·Filed 2006·Granted Mar 15, 2011·5 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →