Inventor · disambiguated record
Nam-Yeal Lee
Also filed as: LEE NAM Y · LEE NAM YEAL
32 granted patents·5 pending applications·227 citations·filing 2003–2021
96Inventor score
Files withSK HYNIX INC13KOREA ELECTRONICS TELECOMM8HYNIX SEMICONDUCTOR INC5OH JOON SEOK3LEE NAM YEAL2
Top patents by PatentIndex Score
37 records- 0195US9466603B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Oct 11, 2016·11 cites·18 claims
- 0295US9293362B2Semiconductor device including air gaps and method of fabricating the sameSK HYNIX INC·Filed 2013·Granted Mar 22, 2016·21 cites·14 claims
- 0394US9202774B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 1, 2015·15 cites·19 claims
- 0494US9159609B2Semiconductor device with air gap spacer and capping barrier layer and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Oct 13, 2015·15 cites·8 claims
- 0593US9514980B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Dec 6, 2016·8 cites·9 claims
- 0691US7547913B2Phase-change memory device using Sb-Se metal alloy and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Jun 16, 2009·21 cites·15 claims
- 0789US8921223B2Semiconductor device with damascene bit line and method for fabricating the sameLEE NAM-YEAL·Filed 2011·Granted Dec 30, 2014·13 cites·5 claims
- 0889US8822335B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Sep 2, 2014·10 cites·18 claims
- 0988US9275937B2Semiconductor device with damascene bit line and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Mar 1, 2016·7 cites·5 claims
- 1087US9698097B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Jul 4, 2017·4 cites·8 claims
- 1187US9024371B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted May 5, 2015·6 cites·8 claims
- 1287US7026639B2Phase change memory element capable of low power operation and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Apr 11, 2006·39 cites·18 claims
- 1386US9576895B2Semiconductor device with damascene bit line and method for fabricating the sameSK HYNIX INC·Filed 2016·Granted Feb 21, 2017·4 cites·5 claims
- 1486US7233017B2Multibit phase change memory device and method of driving the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Jun 19, 2007·21 cites·24 claims
- 1581US7977674B2Phase change memory device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Jul 12, 2011·10 cites·19 claims
- 1677US9355903B2Semiconductor device with air gap and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted May 31, 2016·2 cites·11 claims
- 1771US7920413B2Apparatus and method for writing data to phase-change memory by using power calculation and data inversionELECT & TELECOMM RESEARCH INST·Filed 2008·Granted Apr 5, 2011·8 cites·15 claims
- 1869US8314021B2Method for fabricating semiconductor device with buried gatesCHO JIK-HO·Filed 2010·Granted Nov 20, 2012·4 cites·20 claims
- 1966US8278218B2Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the sameOH JOON SEOK·Filed 2011·Granted Oct 2, 2012·2 cites·14 claims
- 2064US7820546B2Method for manufacturing semiconductor device preventing loss of junction regionHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·2 cites·20 claims
- 2163US7875978B2Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Jan 25, 2011·2 cites·19 claims
- 2263US7777336B2Metal line of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 17, 2010·2 cites·23 claims
- 2353US12327758B2Method for fabricating semiconductor deviceSK HYNIX INC·Filed 2021·Granted Jun 10, 2025·0 cites·25 claims
- 2452US7767994B2Phase-change random access memory device and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Aug 3, 2010·0 cites·9 claims
- 2551US8053895B2Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Nov 8, 2011·0 cites·14 claims
- 2650US8872146B2Phase-change random access memory device and method of manufacturing the sameLEE SEUNG-YUN·Filed 2010·Granted Oct 28, 2014·0 cites·7 claims
- 2750US8008708B2Metal line of semiconductor device having a diffusion barrier and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Aug 30, 2011·0 cites·20 claims
- 2849USRE45356EPhase-change memory device using Sb-Se metal alloy and method of fabricating the sameYOON SUNG MIN·Filed 2006·Granted Feb 3, 2015·0 cites·16 claims
- 2949US2010019386A1Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the sameOH JOON SEOK·Filed 2009·Application pending·0 cites
- 3048US7855421B2Embedded phase-change memory and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Dec 21, 2010·0 cites·7 claims
- 3147US2008135825A1Phase-change memory device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2007·Application pending·0 cites
- 3247US2016172304A1Semiconductor device including air gaps and method of fabricating the sameSK HYNIX INC·Filed 2016·Application pending·0 cites
- 3345US8080472B2Metal line having a MoxSiy/Mo diffusion barrier of semiconductor device and method for forming the sameOH JOON SEOK·Filed 2009·Granted Dec 20, 2011·0 cites·15 claims
- 3444US8071396B2Embedded phase-change memory and method of fabricating the sameLEE SEUNG-YUN·Filed 2010·Granted Dec 6, 2011·0 cites·7 claims
- 3542US2007025226A1Phase change memory device and method of manufacturing the samePARK YOUNG S·Filed 2006·Application pending·0 cites
- 3640US2009209096A1Method for manufacturing semiconductor device having decreased contact resistanceLEE NAM YEAL·Filed 2008·Application pending·0 cites
- 3738US7417891B2Phase change memory device having semiconductor laser unitKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Aug 26, 2008·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →