US2010019386A1PendingUtilityA1

Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same

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Assignee: OH JOON SEOKPriority: Jul 25, 2008Filed: May 21, 2009Published: Jan 28, 2010
Est. expiryJul 25, 2028(~2 yrs left)· nominal 20-yr term from priority
Inventors:Joon Seok OhSeung-Jin YeomBaek Man KimDong Ha JungJeong-Tae KimNam-Yeal LeeJae Hong Kim
H10W 20/425H10W 20/048H10W 20/035H10D 64/011
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Claims

Abstract

An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an Mo x O y layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Claims

exact text as granted — not AI-modified
1 . An electrical conductor line of a semiconductor device, comprising:
 an insulation layer formed on a semiconductor substrate and having a metal line forming region;   a multi-layered diffusion barrier formed on a surface of the metal line forming region of the insulation layer, the diffusion barrier comprising a TaN layer, an Mo x O y  layer on the TaN layer and an Mo layer on the Mo x O y  layer; and   a metal line formed on the diffusion barrier substantially filling in the metal line forming region of the insulation layer.   
     
     
         2 . The electrical conductor line according to  claim 1 , wherein the TaN layer and the Mo x O y  layer both have a thickness of about 5˜50 Å. 
     
     
         3 . The electrical conductor line according to  claim 1 , wherein in the x subscript of the Mo x O y  layer is between a range of about 0.1˜5 and the y subscript of the Mo x O y  layer is between a range of about 0.1˜5. 
     
     
         4 . The electrical conductor line according to  claim 1 , wherein the Mo layer has a thickness of about 100˜400 Å. 
     
     
         5 . The electrical conductor line according to  claim 1 , wherein the metal layer comprises a copper metal layer. 
     
     
         6 . A method for forming a electrical conductor line of a semiconductor device, comprising the steps of:
 forming a metal line forming region in an insulation layer on a semiconductor substrate;   forming a multi-layered diffusion barrier on the metal line forming region of the insulation layer, the diffusion barrier comprising a TaN layer, an Mo x O y  layer and an Mo layer; and   forming a metal line on the diffusion barrier to substantially fill in the metal line forming region.   
     
     
         7 . The method according to  claim 6 , wherein the step of forming the diffusion barrier comprises the steps of:
 forming a TaN layer on the metal line forming region of the insulation layer;   depositing a first Mo layer on the TaN layer;   forming an Mo x O y  layer by oxidating the first Mo layer; and   depositing a second Mo layer on the Mo x O y  layer wherein the diffusion barrier is multi-layered having the TaN layer, the Mo x O y  layer and the Mo layer.   
     
     
         8 . The method according to  claim 7 , wherein the TaN layer has a thickness of about 5˜50 Å. 
     
     
         9 . The method according to  claim 7 , wherein the first Mo layer has a thickness of about 5˜25 Å. 
     
     
         10 . The method according to  claim 7 , wherein the step of forming the Mo x O y  layer by oxidating the first Mo layer is implemented by utilizing a O 2  plasma process or by utilizing O 2  stuffing procedure. 
     
     
         11 . The method according to  claim 10 , wherein the O 2  plasma process uses O 2  gas and Ar gas with a composition ratio of O 2  gas to Ar gas at about 0.1˜0.9. 
     
     
         12 . The method according to  claim 10 , wherein the O 2  plasma process is conducted at a temperature of about 25˜250° C. at a pressure of about 1˜760 mTorr. 
     
     
         13 . The method according to  claim 10 , wherein the O 2  stuffing procedure uses O 2  gas and Ar gas at a composition ratio of O 2  gas to Ar gas at about 0.1˜0.9. 
     
     
         14 . The method according to  claim 10 , wherein the O 2  stuffing procedure is conducted at a temperature of about 50˜400° C. at a pressure of about 1˜760 mTorr. 
     
     
         15 . The method according to  claim 7 , wherein the Mo x O y  layer has a thickness of about 5˜50 Å. 
     
     
         16 . The method according to  claim 7 , wherein, in the Mo x O y  layer, x has a range of about 0.1˜5 and y has a range of about 0.1˜5. 
     
     
         17 . The method according to  claim 7 , wherein the second Mo layer is deposited through Physical Vapor Deposition (PVD). 
     
     
         18 . The method according to  claim 7 , wherein the second Mo layer is deposited at a temperature of between about −25˜25° C. 
     
     
         19 . The method according to  claim 7 , wherein the second Mo layer has a thickness of between about 100˜400 Å. 
     
     
         20 . The method according to  claim 6 , wherein the metal layer comprises a copper layer.

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