Inventor · disambiguated record
Naomi Nagasawa
Also filed as: NAGASAWA NAOMI
13 granted patents·2 pending applications·272 citations·filing 1985–2003
92Inventor score
Files withSONY CORP13
Top patents by PatentIndex Score
15 records- 0194US6610548B1Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memorySONY CORP·Filed 2000·Granted Aug 26, 2003·71 cites·29 claims
- 0294US6400489B1Solid-state displacement element, optical element, and interference filterSONY CORP·Filed 2000·Granted Jun 4, 2002·75 cites·24 claims
- 0386US6577039B2Driving system and actuatorSONY CORP·Filed 2000·Granted Jun 10, 2003·51 cites·43 claims
- 0475US6143679ALayered crystal structure oxideSONY CORP·Filed 1997·Granted Nov 7, 2000·30 cites·22 claims
- 0573US6749686B2Crystal growth method of an oxide and multi-layered structure of oxidesSONY CORP·Filed 2002·Granted Jun 15, 2004·15 cites·29 claims
- 0660US6927436B1Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memorySONY CORP·Filed 2003·Granted Aug 9, 2005·5 cites·2 claims
- 0758US6932920B2Complex material, artificial light-emitting skin and artificial light-emitting bodySONY CORP·Filed 2003·Granted Aug 23, 2005·5 cites·1 claims
- 0849US6106616ALayer crystal structure oxide, production method thereof, and memory element using the sameSONY CORP·Filed 1998·Granted Aug 22, 2000·7 cites·21 claims
- 0941US2003136331A1Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memoryFiled 2003·Application pending·0 cites
- 1037US4650726ACeramic substrate of Na2 O and Ta2 O5 for thin film magnetic headSONY CORP·Filed 1985·Granted Mar 17, 1987·3 cites·3 claims
- 1136US6207082B1Layer-structured oxide and process of producing the sameSONY CORP·Filed 1997·Granted Mar 27, 2001·5 cites·6 claims
- 1236US6171871B1Ferroelectric memory device and their manufacturing methodsSONY CORP·Filed 1998·Granted Jan 9, 2001·4 cites·11 claims
- 1332US6174463B1Layer crystal structure oxide, production method thereof and memory element using the sameSONY CORP·Filed 1998·Granted Jan 16, 2001·1 cites·13 claims
- 1430US4639400ACeramic substrate of Na2 O and Nb2 O5 for magnetic metal thin filmSONY CORP·Filed 1985·Granted Jan 27, 1987·0 cites·3 claims
- 1530US2002130337A1Ferroelectric, memory device and their manufacturing methodsFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →