Ferroelectric, memory device and their manufacturing methods

Abstract

It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.

What is claimed is:  
     
         1 . A ferroelectric wherein 98% or more of an entire body thereof exhibits ferroelectricity.  
     
     
         2 . The ferroelectric according to  claim 1 , wherein the ferroelectric is an oxide having a layered crystal structure that is composed of bismuth, a first element, a second element, and oxygen, where the first element is at least one element selected from the group consisting of sodium, potassium, calcium, barium, strontium, lead, and bismuth and the second element is at least one element selected from the group consisting of iron, titanium, niobium, tantalum, and tungsten.  
     
     
         3 . The ferroelectric according to  claim 2 , wherein the ferroelectric is a single crystal.  
     
     
         4 . The ferroelectric according to  claim 2 , wherein the first element is strontium and the second element is tantalum.  
     
     
         5 . A memory device in which a pair of electrodes are connected to a ferroelectric film, wherein 98% or more of a section of the ferroelectric film to which a voltage is to be applied via the electrodes is a ferroelectric exhibiting ferroelectricity.  
     
     
         6 . The memory device according to  claim 5 , wherein at least part of the ferroelectric film is an oxide having a layered crystal structure that is composed of bismuth, a first element, a second element, and oxygen, where the first element is at least one element selected from the group consisting of sodium, potassium, calcium, barium, strontium, lead, and bismuth and the second element is at least one element selected from the group consisting of iron, titanium, niobium, tantalum, and tungsten.  
     
     
         7 . The memory device according to  claim 6 , wherein the first element is strontium and the second element is tantalum.  
     
     
         8 . A manufacturing method of a ferroelectric, comprising: 
 a crystal growth step of growing a crystal that is to constitute the ferroelectric; and    a voltage application step of applying, after at least part of the crystal has been grown, a voltage to at least part of the crystal to at least partially correct strains of crystal lattices existing in the crystal.    
     
     
         9 . The manufacturing method according to  claim 8 , wherein an AC voltage is applied in the voltage application step.  
     
     
         10 . The manufacturing method according to  claim 8 , wherein in the voltage application step at least one pair of DC voltage pulses to cause opposite electric field directions are applied alternately.  
     
     
         11 . The manufacturing method according to  claim 8 , wherein a voltage having such a magnitude as to cause an electric field that is 1.5 times or more stronger than a coercive field is applied in the voltage application step.  
     
     
         12 . The manufacturing method according to  claim 8 , wherein the voltage application step is executed while heating is performed.  
     
     
         13 . The manufacturing method according to  claim 8 , wherein the voltage application step is executed while no temperature adjustment is made.  
     
     
         14 . The manufacturing method according to  claim 8 , wherein the ferroelectric is an oxide having a layered crystal structure that is composed of bismuth, a first element, a second element, and oxygen, where the first element is at least one element selected from the group consisting of sodium, potassium, calcium, barium, strontium, lead, and bismuth and the second element is at least one element selected from the group consisting of iron, titanium, niobium, tantalum, and tungsten.  
     
     
         15 . The manufacturing method according to  claim 14 , wherein the first element is strontium and the second element is tantalum.  
     
     
         16 . A method for manufacturing a memory device in which a pair of electrodes are connected to a ferroelectric film, comprising: 
 a ferroelectric film forming step of forming a ferroelectric film; and    a voltage application step of applying, after at least part of the ferroelectric film has been grown, a voltage to at least part of the ferroelectric film to at least partially correct strains of crystal lattices existing in the ferroelectric film.    
     
     
         17 . The method according to  claim 16 , wherein a voltage higher than or equal to a memory drive voltage is applied in the voltage application step.  
     
     
         18 . The method according to  claim 16 , wherein a voltage having such a magnitude as to cause an electric field that is 1.5 times or more stronger than a coercive field is applied in the voltage application step.  
     
     
         19 . The method according to  claim 16 , wherein the ferroelectric is an oxide having a layered crystal structure that is composed of bismuth, a first element, a second element, and oxygen, where the first element is at least one element selected from the group consisting of sodium, potassium, calcium, barium, strontium, lead, and bismuth and the second element is at least one element selected from the group consisting of iron, titanium, niobium, tantalum, and tungsten.  
     
     
         20 . The method according to  claim 16 , wherein the first element is strontium and the second element is tantalum.