Inventor · disambiguated record
Nathan Stafford
Also filed as: STAFFORD NATHAN
30 granted patents·13 pending applications·64 citations·filing 2008–2025
95Inventor score
Files withAIR LIQUIDE AMERICAN23AIR LIQUIDE7SAMSUNG ELECTRONICS CO LTD2AIR LIQUIDE ELECTRONICS US LP1DONIAT FRANCOIS1
Top patents by PatentIndex Score
43 records- 0194US9514959B2Fluorocarbon molecules for high aspect ratio oxide etchAIR LIQUIDE·Filed 2013·Granted Dec 6, 2016·14 cites·20 claims
- 0293US11430663B2Iodine-containing compounds for etching semiconductor structuresAIR LIQUIDE AMERICAN·Filed 2020·Granted Aug 30, 2022·3 cites·18 claims
- 0392US10629451B1Method to improve profile control during selective etching of silicon nitride spacersAIR LIQUIDE AMERICAN·Filed 2019·Granted Apr 21, 2020·6 cites·20 claims
- 0490US10529581B2SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applicationsAIR LIQUIDE·Filed 2017·Granted Jan 7, 2020·9 cites·20 claims
- 0589US8664446B1Purification of trimethylamineAIR LIQUIDE AMERICAN·Filed 2012·Granted Mar 4, 2014·10 cites·18 claims
- 0688US10410878B2Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applicationsAIR LIQUIDE AMERICAN·Filed 2017·Granted Sep 10, 2019·6 cites·20 claims
- 0786US10607850B2Iodine-containing compounds for etching semiconductor structuresAIR LIQUIDE AMERICAN·Filed 2016·Granted Mar 31, 2020·4 cites·19 claims
- 0884US12327732B2Method to improve profile control during selective etching of silicon nitride spacersAIR LIQUIDE AMERICAN·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 0984US9892932B2Chemistries for TSV/MEMS/power device etchingAIR LIQUIDE AMERICAN·Filed 2015·Granted Feb 13, 2018·3 cites·14 claims
- 1084US2025092518A1Deposition of iodine-containing carbon filmsAIR LIQUIDE AMERICAN·Filed 2024·Application pending·0 cites
- 1181US10103031B2Chemistries for TSV/MEMS/power device etchingAIR LIQUIDE AMERICAN·Filed 2017·Granted Oct 16, 2018·2 cites·18 claims
- 1279US11837474B2Method to improve profile control during selective etching of silicon nitride spacersAIR LIQUIDE AMERICAN·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 1378US12188123B2Deposition of iodine-containing carbon filmsAIR LIQUIDE AMERICAN·Filed 2021·Granted Jan 7, 2025·0 cites·8 claims
- 1477US9773679B2Method of etching semiconductor structures with etch gasAIR LIQUIDE AMERICAN·Filed 2014·Granted Sep 26, 2017·3 cites·15 claims
- 1576US11152223B2Fluorocarbon molecules for high aspect ratio oxide etchAIR LIQUIDE AMERICAN·Filed 2019·Granted Oct 19, 2021·1 cites·18 claims
- 1672US10115600B2Method of etching semiconductor structures with etch gasAIR LIQUIDE AMERICAN·Filed 2017·Granted Oct 30, 2018·1 cites·16 claims
- 1770US11469110B2Method to improve profile control during selective etching of silicon nitride spacersAIR LIQUIDE AMERICAN·Filed 2020·Granted Oct 11, 2022·0 cites·20 claims
- 1868US12327731B2Etching gas mixture and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 1967US2025046618A1High conductive passivation layers and method of forming the same during high aspect ratio plasma etchingGUO XIANGYU·Filed 2024·Application pending·0 cites
- 2065US2025239461A1Etching gas mixture and method of manufacturing integrated circuit device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2164US12106940B2Systems and methods for storage and supply of F3NO-free FNO gases and F3NO-free FNO gas mixtures for semiconductor processesAIR LIQUIDE·Filed 2022·Granted Oct 1, 2024·0 cites·4 claims
- 2263US2025364219A1Low gwp plasma etching process using c6f12LAIR LIQUIDE SA POUR IETUDE ET IEXPLOITION DES PROCEDES GEORGES CLAUDE·Filed 2024·Application pending·0 cites
- 2360US12341017B2Etching methods with alternating non-plasma and plasma etching processesAIR LIQUIDE AMERICAN·Filed 2022·Granted Jun 24, 2025·0 cites·19 claims
- 2460US10720335B2Chemistries for TSV/MEMS/power device etchingAIR LIQUIDE AMERICAN·Filed 2018·Granted Jul 21, 2020·0 cites·17 claims
- 2558US8191397B2Methods for checking and calibrating concentration sensors in a semiconductor processing chamberDONIAT FRANCOIS·Filed 2008·Granted Jun 5, 2012·2 cites·10 claims
- 2658US2025079127A1Dielectric plasma etching using c2h2f2AIR LIQUIDE·Filed 2023·Application pending·0 cites
- 2758US2025079183A1Cryogenic plasma etching using c2h2f2AIR LIQUIDE·Filed 2023·Application pending·0 cites
- 2857US10381240B2Fluorocarbon molecules for high aspect ratio oxide etchAIR LIQUIDE AMERICAN·Filed 2016·Granted Aug 13, 2019·0 cites·12 claims
- 2956US12224177B2Method of running an etch process in higher selectivity to mask and polymer regime by using a cyclic etch processAIR LIQUIDE AMERICAN·Filed 2022·Granted Feb 11, 2025·0 cites·15 claims
- 3056US12106971B2High conductive passivation layers and method of forming the same during high aspect ratio plasma etchingAIR LIQUIDE AMERICAN·Filed 2020·Granted Oct 1, 2024·0 cites·15 claims
- 3156US2010078601A1Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing FilmsAIR LIQUIDE AMERICAN·Filed 2009·Application pending·0 cites
- 3255US8361199B2Purification of H2SeAIR LIQUIDE ELECTRONICS US LP·Filed 2011·Granted Jan 29, 2013·0 cites·13 claims
- 3354US2024242971A1Nitrogen-containing aromatic or ring structure molecules for plasma etch and depositionAIR LIQUIDE AMERICAN·Filed 2022·Application pending·0 cites
- 3454US2024222114A1Method of forming a conformal and continuous crystalline silicon nanosheet with improved electrical properties at low doping levelsLAIR LIQUIDE SA POUR LETUDE ET L’EXPLOITATION DES PROCEDES GEORGES CLAUDE·Filed 2022·Application pending·0 cites
- 3552US12083493B2Selective adsorption of halocarbon impurities containing cl, br and i in fluorocarbons or hydrofluorocarbons using adsorbent supported metal oxideAIR LIQUIDE AMERICAN·Filed 2021·Granted Sep 10, 2024·0 cites·11 claims
- 3651US8088938B2Low decomposition storage of a tantalum precursorSTAFFORD NATHAN·Filed 2008·Granted Jan 3, 2012·0 cites·19 claims
- 3749US2020203127A1Systems and methods for storage and supply of f3no-free fno gases and f3no-free fno gas mixtures for semiconductor processesAIR LIQUIDE·Filed 2018·Application pending·0 cites
- 3848US11024513B2Methods for minimizing sidewall damage during low k etch processesLAIR LIQUIDE SA POUR LETUDE ET LEXPLOITATION DES PROCEDES GEORGES CLUADEQ·Filed 2017·Granted Jun 1, 2021·0 cites·8 claims
- 3948US2017110336A1Methods for minimizing sidewall damage during low k etch processesL'AIR LIQUIDE SOCIÉTÉ ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLUADEQ·Filed 2016·Application pending·0 cites
- 4045US2025379062A1Sidewall passivation layers and method of forming the same during high aspect ratio plasma etchingLAIR LIQUIDE SA POUR IETUDE ET IEPLOITATION DES PROCEDES GEORGES CLAUDE·Filed 2022·Application pending·0 cites
- 4141US10347498B2Methods of minimizing plasma-induced sidewall damage during low K etch processesAIR LIQUIDE·Filed 2018·Granted Jul 9, 2019·0 cites·9 claims
- 4237US2012227762A1Plasma ashing compounds and methods of useDUSSARRAT CHRISTIAN·Filed 2010·Application pending·0 cites
- 4335US8974758B2Methods of purifying COSERTAN ASLI·Filed 2010·Granted Mar 10, 2015·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →