Inventor · disambiguated record
Natsuki Yokoyama
Also filed as: YOKOYAMA NATSUKI
61 granted patents·13 pending applications·1,445 citations·filing 1987–2023
99Inventor score
Files withHITACHI LTD29RENESAS TECH CORP14HITACHI HIGH TECH CORP6RENESAS ELECTRONICS CORP5SHIMIZU HARUKA5
Top patents by PatentIndex Score
74 records- 0198US7402449B2Integrated micro electro-mechanical system and manufacturing method thereofHITACHI LTD·Filed 2005·Granted Jul 22, 2008·130 cites·10 claims
- 0296US5820679AFabrication system and method having inter-apparatus transporterHITACHI LTD·Filed 1996·Granted Oct 13, 1998·144 cites·1 claims
- 0395US4897709ATitanium nitride film in contact hole with large aspect ratioHITACHI LTD·Filed 1988·Granted Jan 30, 1990·151 cites·12 claims
- 0494US6099598AFabrication system and fabrication methodHITACHI LTD·Filed 1998·Granted Aug 8, 2000·99 cites·9 claims
- 0593US7045843B2Semiconductor device using MEMS switchHITACHI LTD·Filed 2004·Granted May 16, 2006·50 cites·16 claims
- 0691US7062344B2Fabrication system and fabrication methodRENESAS TECH CORP·Filed 2003·Granted Jun 13, 2006·32 cites·12 claims
- 0791US6677230B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Jan 13, 2004·52 cites·3 claims
- 0890US5981399AMethod and apparatus for fabricating semiconductor devicesHITACHI LTD·Filed 1995·Granted Nov 9, 1999·114 cites·53 claims
- 0989US9478605B2Semiconductor device with similar impurity concentration JTE regionsHITACHI POWER SEMICONDUCTOR DEVICE LTD·Filed 2013·Granted Oct 25, 2016·7 cites·6 claims
- 1089US7325457B2Sensor and sensor moduleHITACHI LTD·Filed 2006·Granted Feb 5, 2008·21 cites·16 claims
- 1189US5858863AFabrication system and method having inter-apparatus transporterHITACHI LTD·Filed 1996·Granted Jan 12, 1999·63 cites·18 claims
- 1288US7392106B2Fabrication system and fabrication methodRENESAS TECH CORP·Filed 2005·Granted Jun 24, 2008·8 cites·8 claims
- 1388US6461957B1Method of manufacturing semiconductor deviceHITACHI LTD·Filed 2001·Granted Oct 8, 2002·38 cites·20 claims
- 1487US7451656B2Semiconductor device embedded with pressure sensor and manufacturing method thereofHITACHI LTD·Filed 2007·Granted Nov 18, 2008·13 cites·9 claims
- 1587US7270012B2Semiconductor device embedded with pressure sensor and manufacturing method thereofHITACHI LTD·Filed 2005·Granted Sep 18, 2007·13 cites·8 claims
- 1686US7603194B2Fabrication system and fabrication methodRENESAS TECH CORP·Filed 2008·Granted Oct 13, 2009·6 cites·3 claims
- 1786US7310563B2Fabrication system and fabrication methodRENESAS TECH CORP·Filed 2005·Granted Dec 18, 2007·6 cites·6 claims
- 1886US7115943B2Nonvolatile semiconductor memory device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Granted Oct 3, 2006·39 cites·7 claims
- 1984US8524552B2Normally-off power JFET and manufacturing method thereofARAI KOICHI·Filed 2012·Granted Sep 3, 2013·6 cites·16 claims
- 2082US5562800AWafer transport methodHITACHI LTD·Filed 1994·Granted Oct 8, 1996·69 cites·21 claims
- 2181US8445352B2Manufacturing method of semiconductor deviceYOKOYAMA NATSUKI·Filed 2008·Granted May 21, 2013·9 cites·3 claims
- 2279US8890278B2Semiconductor deviceHITACHI LTD·Filed 2012·Granted Nov 18, 2014·4 cites·10 claims
- 2379US5270259AMethod for fabricating an insulating film from a silicone resin using O.sub.HITACHI LTD·Filed 1991·Granted Dec 14, 1993·69 cites·25 claims
- 2479US5175017AMethod of forming metal or metal silicide filmHITACHI LTD·Filed 1991·Granted Dec 29, 1992·43 cites·57 claims
- 2577US8129802B2Integrated micro electro-mechanical system and manufacturing method thereofFUKUDA HIROSHI·Filed 2008·Granted Mar 6, 2012·7 cites·5 claims
- 2676US8436397B2Semiconductor device including normally-off type junction transistor and method of manufacturing the sameSHIMIZU HARUKA·Filed 2009·Granted May 7, 2013·7 cites·11 claims
- 2775US8872191B2Electronic circuit deviceSHIMIZU HARUKA·Filed 2012·Granted Oct 28, 2014·3 cites·3 claims
- 2875US5177589ARefractory metal thin film having a particular step coverage factor and ratio of surface roughnessHITACHI LTD·Filed 1991·Granted Jan 5, 1993·54 cites·8 claims
- 2974US4792842ASemiconductor device with wiring layer using bias sputteringHITACHI LTD·Filed 1987·Granted Dec 20, 1988·44 cites·21 claims
- 3073US6710383B2MISFET semiconductor device having a high dielectric constant insulating film with tapered end portionsRENESAS TECH CORP·Filed 2001·Granted Mar 23, 2004·13 cites·23 claims
- 3172US7682990B2Method of manufacturing nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted Mar 23, 2010·5 cites·13 claims
- 3270US7906796B2Bipolar device and fabrication method thereofHITACHI LTD·Filed 2008·Granted Mar 15, 2011·4 cites·15 claims
- 3369US2023369628A1Fuel Cell StackHITACHI LTD·Filed 2023·Application pending·0 cites
- 3468US2023327164A1Fuel cell and fuel cell stackHITACHI LTD·Filed 2023·Application pending·0 cites
- 3567US5270232AProcess for fabricating field effect transistorHITACHI LTD·Filed 1992·Granted Dec 14, 1993·27 cites·6 claims
- 3665US7772613B2Semiconductor device with large blocking voltage and method of manufacturing the sameRENESAS TECH CORP·Filed 2009·Granted Aug 10, 2010·3 cites·15 claims
- 3765US5601686AWafer transport methodHITACHI LTD·Filed 1996·Granted Feb 11, 1997·26 cites·22 claims
- 3864US7199022B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Apr 3, 2007·18 cites·8 claims
- 3964US7196384B2Semiconductor device and method for manufacturing thereofHITACHI ULSI SYS CO LTD·Filed 2005·Granted Mar 27, 2007·1 cites·2 claims
- 4062US8564060B2Semiconductor device with large blocking voltage and manufacturing method thereofSHIMIZU HARUKA·Filed 2010·Granted Oct 22, 2013·2 cites·9 claims
- 4162US8390001B2Electronic circuit deviceSHIMIZU HARUKA·Filed 2011·Granted Mar 5, 2013·1 cites·4 claims
- 4262US8203150B2Silicon carbide semiconductor substrate and method of manufacturing the sameOHNO TOSHIYUKI·Filed 2009·Granted Jun 19, 2012·2 cites·6 claims
- 4362US2024120520A1Fuel battery cell and manufacturing method thereforHITACHI HIGH TECH CORP·Filed 2021·Application pending·0 cites
- 4461US2010131093A1Fabrication system and fabrication methodRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 4558US2023127271A1Fuel Cell and Method for Producing SameHITACHI HIGH TECH CORP·Filed 2020·Application pending·0 cites
- 4657US9543395B2Normally-off power JFET and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 10, 2017·0 cites·8 claims
- 4757US9293453B2Electronic circuit deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 22, 2016·0 cites·5 claims
- 4857US6103566AMethod for manufacturing semiconductor integrated circuit device having a titanium electrodeHITACHI LTD·Filed 1996·Granted Aug 15, 2000·22 cites·18 claims
- 4955US9755014B2Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depthHITACHI POWER SEMICONDUCTOR DEVICE LTD·Filed 2016·Granted Sep 5, 2017·0 cites·6 claims
- 5055US6897104B2Semiconductor device and method for manufacturing thereofHITACHI ULSI SYS CO LTD·Filed 2003·Granted May 24, 2005·3 cites·5 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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