Inventor · disambiguated record
Nevil N. Gajera
Also filed as: GAJERA NEVIL · GAJERA NEVIL N
61 granted patents·30 pending applications·155 citations·filing 2006–2025
98Inventor score
Top patents by PatentIndex Score
91 records- 0198US11367484B1Multi-step pre-read for write operations in memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 21, 2022·12 cites·20 claims
- 0298US11295822B2Multi-state programming of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 5, 2022·15 cites·30 claims
- 0398US11139034B1Data-based polarity write operationsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 5, 2021·11 cites·25 claims
- 0498US11139016B1Read refresh operationMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 5, 2021·8 cites·25 claims
- 0597US11615854B2Identify the programming mode of memory cells during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·7 cites·18 claims
- 0696US11514983B2Identify the programming mode of memory cells based on cell statistics obtained during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 29, 2022·5 cites·20 claims
- 0796US11404130B1Evaluation of background leakage to select write voltage in memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 2, 2022·5 cites·20 claims
- 0894US11664073B2Adaptively programming memory cells in different modes to optimize performanceMICRON TECHNOLOGY INC·Filed 2021·Granted May 30, 2023·3 cites·17 claims
- 0993US11475970B1Bipolar read retryMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 18, 2022·3 cites·15 claims
- 1092US11962327B2Iterative decoding technique for correcting DRAM device failuresMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 16, 2024·3 cites·21 claims
- 1191US12080359B2Identify the programming mode of memory cells during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 3, 2024·1 cites·19 claims
- 1290US11355209B2Accessing a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 7, 2022·3 cites·35 claims
- 1390US10964385B1Restoring memory cell threshold voltagesMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·9 cites·24 claims
- 1490US7567472B2Memory block testingMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 28, 2009·23 cites·11 claims
- 1587US12106803B2Multi-step pre-read for write operations in memory devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 1, 2024·1 cites·17 claims
- 1686US12094533B2Memory cell read operation techniquesMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 17, 2024·1 cites·25 claims
- 1786US8094508B2Memory block testingGATZEMEIER SCOTT N·Filed 2009·Granted Jan 10, 2012·20 cites·21 claims
- 1885US9589634B1Techniques to mitigate bias drift for a memory deviceINTEL CORP·Filed 2016·Granted Mar 7, 2017·6 cites·22 claims
- 1984US11170853B2Modified write voltage for memory devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 9, 2021·2 cites·25 claims
- 2083US11875867B2Weighted wear leveling for improving uniformityMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 16, 2024·1 cites·20 claims
- 2181US11527287B1Drift aware read operationsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·1 cites·20 claims
- 2280US11694747B2Self-selecting memory cells configured to store more than one bit per memory cellMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 4, 2023·1 cites·19 claims
- 2377US11664074B2Programming intermediate state to store data in self-selecting memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted May 30, 2023·1 cites·18 claims
- 2475US2025118366A1Drift Aware Read OperationsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2575US2025391447A1Heterogeneous integrated circuits with voltage booster circuits, including heterogeneous integrated circuits with inductor-based pumps, and associated systems, devices, and methodsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2674US12316349B2Iterative decoding technique for correcting DRAM device failuresMICRON TECHNOLOGY INC·Filed 2024·Granted May 27, 2025·0 cites·9 claims
- 2774US12176029B2Drift aware read operationsMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 2874US2024404606A1Identify the programming mode of memory cells during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2974US2025014641A1Multi-step pre-read for write operations in memory devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3073US11923007B2Dirty write on power offMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 5, 2024·0 cites·17 claims
- 3172US12014784B2Evaluation of background leakage to select write voltage in memory devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 3272US9892785B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2017·Granted Feb 13, 2018·2 cites·20 claims
- 3372US2023268005A1Adaptively Programming Memory Cells in Different Modes to Optimize PerformanceMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 3472US2024331781A1Evaluation of background leakage to select write voltage in memory devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3570US12170531B2Iterative decoder for correcting dram device failuresMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 17, 2024·0 cites·10 claims
- 3670US10026460B2Techniques to mitigate bias drift for a memory deviceINTEL CORP·Filed 2017·Granted Jul 17, 2018·2 cites·15 claims
- 3770US9583187B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2015·Granted Feb 28, 2017·2 cites·20 claims
- 3870US2025054543A1Memory cell read operation techniquesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3969US12019516B2Instant write scheme with delayed parity/raidMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 25, 2024·0 cites·22 claims
- 4068US11728005B2Bipolar read retryMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 4168US10783966B2Multistage set procedure for phase change memoryINTEL CORP·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 4267US11783902B2Multi-state programming of memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 10, 2023·0 cites·18 claims
- 4367US11710528B2Data-based polarity write operationsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 4467US11616098B2Three-dimensional memory arrays, and methods of forming the sameMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 28, 2023·0 cites·20 claims
- 4566US12013756B2Method and memory system for writing data to dram submodules based on the data traffic demandMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 18, 2024·0 cites·16 claims
- 4666US11942139B2Performing refresh operations on memory cellsMICRON TECHNOLOGY INC·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 4766US11894078B2Accessing a multi-level memory cellMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 6, 2024·0 cites·19 claims
- 4866US2024096433A1Weighted wear leveling for improving uniformityMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 4965US11688460B2Memory operation with double-sided asymmetric decodersMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 5065US11545216B2Mitigation of voltage threshold drift associated with power down condition of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 3, 2023·0 cites·23 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →