Inventor · disambiguated record
Nikolaos Bekiaris
Also filed as: BEKIARIS NIKOLAOS
23 granted patents·9 pending applications·347 citations·filing 2000–2024
95Inventor score
Top patents by PatentIndex Score
32 records- 0196US11101174B2Gap fill deposition processAPPLIED MATERIALS INC·Filed 2019·Granted Aug 24, 2021·16 cites·19 claims
- 0296US10410918B2Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium dopingAPPLIED MATERIALS INC·Filed 2018·Granted Sep 10, 2019·17 cites·20 claims
- 0394US8992792B2Method of fabricating an ultra low-k dielectric self-aligned viaAPPLIED MATERIALS INC·Filed 2012·Granted Mar 31, 2015·20 cites·8 claims
- 0490US7226853B2Method of forming a dual damascene structure utilizing a three layer hard mask structureAPPLIED MATERIALS INC·Filed 2002·Granted Jun 5, 2007·51 cites·27 claims
- 0589US6592980B1Mesoporous films having reduced dielectric constantsAIR PROD & CHEM·Filed 2000·Granted Jul 15, 2003·39 cites·6 claims
- 0688US7244683B2Integration of ALD/CVD barriers with porous low k materialsAPPLIED MATERIALS INC·Filed 2003·Granted Jul 17, 2007·42 cites·22 claims
- 0785US6806203B2Method of forming a dual damascene structure using an amorphous silicon hard maskAPPLIED MATERIALS INC·Filed 2002·Granted Oct 19, 2004·43 cites·26 claims
- 0885US6576568B2Ionic additives for extreme low dielectric constant chemical formulationsAPPLIED MATERIALS INC·Filed 2001·Granted Jun 10, 2003·29 cites·15 claims
- 0984US6991739B2Method of photoresist removal in the presence of a dielectric layer having a low k-valueAPPLIED MATERIALS INC·Filed 2001·Granted Jan 31, 2006·34 cites·26 claims
- 1082US12288717B2Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2024·Granted Apr 29, 2025·0 cites·11 claims
- 1180US7534627B2Methods and systems for controlling critical dimensions in track lithography toolsSOKUDO CO LTD·Filed 2007·Granted May 19, 2009·11 cites·20 claims
- 1278US9570345B1Cobalt resistance recovery by hydrogen annealAPPLIED MATERIALS INC·Filed 2016·Granted Feb 14, 2017·3 cites·18 claims
- 1377US12046508B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 1477US6818289B2Mesoporous films having reduced dielectric constantsAIR PROD & CHEM·Filed 2002·Granted Nov 16, 2004·17 cites·11 claims
- 1575US6896955B2Ionic additives for extreme low dielectric constant chemical formulationsAPPLIED MATERIALS INC·Filed 2002·Granted May 24, 2005·16 cites·20 claims
- 1673US12020982B2Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2022·Granted Jun 25, 2024·0 cites·14 claims
- 1773US9711397B1Cobalt resistance recovery by hydrogen annealAPPLIED MATERIALS INC·Filed 2016·Granted Jul 18, 2017·2 cites·20 claims
- 1872US2024128121A1Multi-step process for flowable gap-fill filmAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1967US11615984B2Method of dielectric material fill and treatmentAPPLIED MATERIALS INC·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 2064US10438849B2Microwave anneal to improve CVD metal gap-fill and throughputAPPLIED MATERIALS INC·Filed 2016·Granted Oct 8, 2019·1 cites·22 claims
- 2163US2020373200A1Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 2261US11901222B2Multi-step process for flowable gap-fill filmAPPLIED MATERIALS INC·Filed 2020·Granted Feb 13, 2024·0 cites·7 claims
- 2361US2025338641A1Deep trench sidewall passivation using conformal plasma doping and low-temperature thermal treatmentsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2461US2025204061A1Complementary metal oxide semiconductor image sensor with reduced p-type region widthAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2558US11043415B2Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium dopingAPPLIED MATERIALS INC·Filed 2019·Granted Jun 22, 2021·0 cites·20 claims
- 2658US7265062B2Ionic additives for extreme low dielectric constant chemical formulationsAIR PROD & CHEM·Filed 2003·Granted Sep 4, 2007·6 cites·13 claims
- 2753US2009275149A1Methods and systems for controlling critical dimensions in track lithography toolsSOKUDO CO LTD·Filed 2008·Application pending·0 cites
- 2851US11955333B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Granted Apr 9, 2024·0 cites·18 claims
- 2948US2021111222A1PROCESS TO IMPROVE INTERFACE STATE DENSITY Dit ON DEEP TRENCH ISOLATION (DTI) FOR CMOS IMAGE SENSORAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3047US2022230887A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 3146US2022298636A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 3237US2009253078A1Double exposure lithography using low temperature oxide and uv cure processSOKUDO CO LTD·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →