Inventor · disambiguated record
Nigel Chan
Also filed as: CHAN NIGEL
31 granted patents·1 pending application·159 citations·filing 2005–2023
96Inventor score
Top patents by PatentIndex Score
32 records- 0197US10909298B1Well contact cell with doped tap region separated from active region, and methods to form sameGLOBALFOUNDRIES DRESDEN MOD 1·Filed 2020·Granted Feb 2, 2021·12 cites·20 claims
- 0296US9793372B1Integrated circuit including a dummy gate structure and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 17, 2017·14 cites·10 claims
- 0395US9590118B1Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structureGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·14 cites·15 claims
- 0494US12046603B2Semiconductor structure including sectioned well regionGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 23, 2024·2 cites·20 claims
- 0593US7362610B1Programming method for non-volatile memory and non-volatile memory-based programmable logic deviceACTEL CORP·Filed 2005·Granted Apr 22, 2008·30 cites·17 claims
- 0692US9490007B1Device comprising a plurality of FDSOI static random-access memory bitcells and method of operation thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 8, 2016·20 cites·21 claims
- 0790US9847347B1Semiconductor structure including a first transistor at a semiconductor-on-insulator region and a second transistor at a bulk region and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·8 cites·20 claims
- 0888US10177163B1SOI-based floating gate memory cellGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 8, 2019·5 cites·19 claims
- 0987US9685336B1Process monitoring for gate cut maskGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·5 cites·17 claims
- 1087US8817528B2Device comprising a plurality of static random access memory cells and method of operation thereofOTTO MICHAEL·Filed 2012·Granted Aug 26, 2014·12 cites·20 claims
- 1184US10396084B1Semiconductor devices including self-aligned active regions for planar transistor architectureGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 27, 2019·4 cites·17 claims
- 1284US9762245B1Semiconductor structure with back-gate switchingGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·4 cites·9 claims
- 1381US10319827B2High voltage transistor using buried insulating layer as gate dielectricGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 11, 2019·3 cites·20 claims
- 1480US10157996B2Methods for forming integrated circuits that include a dummy gate structureGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 1578US8243520B2Non-volatile memory with predictive programmingCHAN NIGEL·Filed 2009·Granted Aug 14, 2012·15 cites·26 claims
- 1670US10559490B1Dual-depth STI cavity extension and method of production thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 11, 2020·1 cites·15 claims
- 1769US10593674B1Deep fence isolation for logic cellsGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 17, 2020·1 cites·20 claims
- 1868US9768084B1Inline monitoring of transistor-to-transistor critical dimensionGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 19, 2017·1 cites·16 claims
- 1967US7623390B2Programming method for non-volatile memory and non-volatile memory-based programmable logic deviceACTEL CORP·Filed 2008·Granted Nov 24, 2009·5 cites·17 claims
- 2062US12453178B2IC structure for connected capacitances and method of forming sameGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2158US10811433B2High-voltage transistor device with thick gate insulation layersGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 20, 2020·0 cites·20 claims
- 2254US10418380B2High-voltage transistor device with thick gate insulation layersGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 17, 2019·0 cites·12 claims
- 2353US10079605B2Semiconductor structure with back-gate switchingGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 18, 2018·0 cites·16 claims
- 2453US8509007B2Hybrid read scheme for multi-level dataNIRSCHL THOMAS·Filed 2012·Granted Aug 13, 2013·1 cites·21 claims
- 2552US11488967B2Eight-transistor static random access memory cellGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 1, 2022·0 cites·20 claims
- 2650US11127860B2Extended-drain field-effect transistors including a floating gateGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 2749US10504906B2FinFET SRAM layout and method of making the sameGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 10, 2019·0 cites·18 claims
- 2846US10923482B2IC product with a novel bit cell design and a memory array comprising such bit cellsGLOBALFOUNDRIES US INC·Filed 2019·Granted Feb 16, 2021·0 cites·15 claims
- 2944US8921898B1Device including an array of memory cells and well contact areas, and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 30, 2014·0 cites·20 claims
- 3043US10311201B2Alignment key design rule check for correct placement of abutting cells in an integrated circuitGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 4, 2019·0 cites·16 claims
- 3136US8953388B2Memory cell assembly including an avoid disturb cellOTTO MICHAEL·Filed 2012·Granted Feb 10, 2015·0 cites·16 claims
- 3236US2019312038A1Semiconductor device including fdsoi transistors with compact ground connection via back gateGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →