Inventor · disambiguated record
Nirmalya Maity
Also filed as: MAITY NIRMALYA
14 granted patents·7 pending applications·1,204 citations·filing 1999–2025
95Inventor score
Top patents by PatentIndex Score
21 records- 0198US7241686B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2005·Granted Jul 10, 2007·89 cites·31 claims
- 0298US7049226B2Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·514 cites·55 claims
- 0398US6350353B2Alternate steps of IMP and sputtering process to improve sidewall coverageAPPLIED MATERIALS INC·Filed 1999·Granted Feb 26, 2002·175 cites·21 claims
- 0497US7595263B2Atomic layer deposition of barrier materialsAPPLIED MATERIALS INC·Filed 2007·Granted Sep 29, 2009·68 cites·42 claims
- 0597US7524762B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2007·Granted Apr 28, 2009·61 cites·26 claims
- 0696US7211508B2Atomic layer deposition of tantalum based barrier materialsAPPLIED MATERIALS INC·Filed 2004·Granted May 1, 2007·139 cites·25 claims
- 0795US7264846B2Ruthenium layer formation for copper film depositionAPPLIED MATERIALS INC·Filed 2003·Granted Sep 4, 2007·87 cites·46 claims
- 0892US8324095B2Integration of ALD tantalum nitride for copper metallizationCHUNG HUA·Filed 2009·Granted Dec 4, 2012·18 cites·15 claims
- 0992US6841050B2Small planetary magnetronAPPLIED MATERIALS INC·Filed 2002·Granted Jan 11, 2005·36 cites·25 claims
- 1083US7807030B2Small scanned magentronAPPLIED MATERIALS INC·Filed 2006·Granted Oct 5, 2010·4 cites·9 claims
- 1175US7169271B2Magnetron executing planetary motion adjacent a sputtering targetAPPLIED MATERIALS INC·Filed 2004·Granted Jan 30, 2007·11 cites·21 claims
- 1271US7691742B2Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATAAPPLIED MATERIALS INC·Filed 2009·Granted Apr 6, 2010·2 cites·20 claims
- 1356US2024387458A1Three-Dimensional Vertical Interconnect Architecture and Methods For FormingAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1456US2025379184A1Self-alignment for bonding of semiconductor devicesYIELD ENG SYSTEMS INC·Filed 2025·Application pending·0 cites
- 1555US12001193B2Apparatus for environmental control of dies and substrates for hybrid bondingAPPLIED MATERIALS INC·Filed 2022·Granted Jun 4, 2024·0 cites·19 claims
- 1653US12094726B2Adapting electrical, mechanical, and thermal properties of package substratesAPPLIED MATERIALS INC·Filed 2021·Granted Sep 17, 2024·0 cites·19 claims
- 1751US2006148253A1Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1848US2006153973A1Ruthenium layer formation for copper film depositionAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1945US2002084181A1Alternate steps of IMP and sputtering process to improve sidewall coverageAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 2037US2003216035A1Method and apparatus for sputter depositionAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 2137US2003116427A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →