Inventor · disambiguated record
Niloy Mukherjee
Also filed as: MUKHERJEE NILOY
243 granted patents·25 pending applications·1,439 citations·filing 2005–2024
99Inventor score
Top patents by PatentIndex Score
268 records- 0198US12108608B1Memory devices with dual encapsulation layers and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Oct 1, 2024·8 cites·20 claims
- 0298US11955512B1Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Apr 9, 2024·3 cites·18 claims
- 0398US10887337B1Detecting and trail-continuation for attacks through remote desktop protocol lateral movementCONFLUERA INC·Filed 2020·Granted Jan 5, 2021·22 cites·20 claims
- 0498US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0598US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0698US8110877B2Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regionsMUKHERJEE NILOY·Filed 2008·Granted Feb 7, 2012·108 cites·15 claims
- 0797US12289894B1Method of fabricating transistors and stacked planar capacitors for memory and logic applicationsKEPLER COMPUTING INC·Filed 2022·Granted Apr 29, 2025·3 cites·20 claims
- 0897US11871584B1Multi-level hydrogen barrier layers for memory applicationsKEPLER COMPUTING INC·Filed 2021·Granted Jan 9, 2024·2 cites·20 claims
- 0997US11839088B1Integrated via and bridge electrodes for memory array applications and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Dec 5, 2023·2 cites·20 claims
- 1097US11765908B1Memory device fabrication through wafer bondingKEPLER COMPUTING INC·Filed 2023·Granted Sep 19, 2023·4 cites·19 claims
- 1197US11659714B1Ferroelectric device film stacks with texturing layer, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted May 23, 2023·27 cites·19 claims
- 1297US9292564B2Mirroring, in memory, data from disk to improve query performanceORACLE INT CORP·Filed 2014·Granted Mar 22, 2016·47 cites·39 claims
- 1397US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 1497US8952541B2Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processesMUKHERJEE NILOY·Filed 2012·Granted Feb 10, 2015·36 cites·5 claims
- 1597US8901537B2Transistors with high concentration of boron doped germaniumMURTHY ANAND S·Filed 2010·Granted Dec 2, 2014·56 cites·25 claims
- 1697US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 1797US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 1896US9684682B2Sharding of in-memory objects across NUMA nodesORACLE INT CORP·Filed 2015·Granted Jun 20, 2017·20 cites·20 claims
- 1996US9627384B2Transistors with high concentration of boron doped germaniumINTEL CORP·Filed 2014·Granted Apr 18, 2017·12 cites·20 claims
- 2096US9209290B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 8, 2015·11 cites·14 claims
- 2196US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 2296US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 2395US11741428B1Iterative monetization of process development of non-linear polar material and devicesKEPLER COMPUTING INC·Filed 2022·Granted Aug 29, 2023·2 cites·19 claims
- 2495US10630703B1Methods and system for identifying relationships among infrastructure security-related eventsCONFLUERA INC·Filed 2019·Granted Apr 21, 2020·22 cites·18 claims
- 2595US10630704B1Methods and systems for identifying infrastructure attack progressionsCONFLUERA INC·Filed 2019·Granted Apr 21, 2020·20 cites·18 claims
- 2695US10630716B1Methods and system for tracking security risks over infrastructureCONFLUERA INC·Filed 2019·Granted Apr 21, 2020·25 cites·18 claims
- 2795US10574683B1Methods and system for detecting behavioral indicators of compromise in infrastructureCONFLUERA INC·Filed 2019·Granted Feb 25, 2020·21 cites·16 claims
- 2895US10439134B2Techniques for forming non-planar resistive memory cellsINTEL CORP·Filed 2014·Granted Oct 8, 2019·12 cites·21 claims
- 2995US9653680B2Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devicesINTEL CORP·Filed 2015·Granted May 16, 2017·11 cites·6 claims
- 3095US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 3195US9530878B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 27, 2016·8 cites·14 claims
- 3295US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 3395US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 3495US8823059B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2012·Granted Sep 2, 2014·15 cites·31 claims
- 3594US9755062B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2016·Granted Sep 5, 2017·7 cites·20 claims
- 3694US9430390B2Core in-memory space and object management architecture in a traditional RDBMS supporting DW and OLTP applicationsORACLE INT CORP·Filed 2014·Granted Aug 30, 2016·12 cites·20 claims
- 3794US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 3893US11397808B1Attack detection based on graph edge contextCONFLUERA INC·Filed 2021·Granted Jul 26, 2022·38 cites·20 claims
- 3993US11387320B2Transistors with high concentration of germaniumINTEL CORP·Filed 2019·Granted Jul 12, 2022·3 cites·20 claims
- 4093US10658471B2Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layersINTEL CORP·Filed 2015·Granted May 19, 2020·8 cites·18 claims
- 4193US10630715B1Methods and system for characterizing infrastructure security-related eventsCONFLUERA INC·Filed 2019·Granted Apr 21, 2020·14 cites·12 claims
- 4293US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 4393US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 4493US8987091B2III-N material structure for gate-recessed transistorsTHEN HAN WUI·Filed 2011·Granted Mar 24, 2015·11 cites·21 claims
- 4593US7964490B2Methods of forming nickel sulfide film on a semiconductor deviceINTEL CORP·Filed 2008·Granted Jun 21, 2011·19 cites·28 claims
- 4692US12165918B2Conformal titanium nitride-based thin films and methods of forming sameEUGENUS INC·Filed 2022·Granted Dec 10, 2024·2 cites·19 claims
- 4792US10544519B2Method and apparatus for surface preparation prior to epitaxial depositionAIXTRON SE·Filed 2017·Granted Jan 28, 2020·8 cites·20 claims
- 4892US10541305B2Group III-N nanowire transistorsINTEL CORP·Filed 2019·Granted Jan 21, 2020·4 cites·20 claims
- 4992US10025822B2Optimizing execution plans for in-memory-aware joinsORACLE INT CORP·Filed 2015·Granted Jul 17, 2018·7 cites·16 claims
- 5092US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
Showing the top 50 of 268 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →