Inventor · disambiguated record
Nidhi Nidhi
39 granted patents·7 pending applications·38 citations·filing 2014–2025
95Inventor score
Files withINTEL CORP46
Top patents by PatentIndex Score
46 records- 0193US10312367B2Monolithic integration of high voltage transistors and low voltage non-planar transistorsINTEL CORP·Filed 2014·Granted Jun 4, 2019·12 cites·10 claims
- 0291US11387328B2III-N tunnel device architectures and high frequency mixers employing a III-N tunnel deviceINTEL CORP·Filed 2018·Granted Jul 12, 2022·6 cites·20 claims
- 0388US11437483B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2020·Granted Sep 6, 2022·2 cites·25 claims
- 0483US9947585B2Multi-gate transistor with variably sized finINTEL CORP·Filed 2014·Granted Apr 17, 2018·5 cites·24 claims
- 0582US10229866B2On-chip through-body-via capacitors and techniques for forming sameINTEL CORP·Filed 2015·Granted Mar 12, 2019·4 cites·20 claims
- 0679US12349411B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0778US11588037B2Planar transistors with wrap-around gates and wrap-around source and drain contactsINTEL CORP·Filed 2019·Granted Feb 21, 2023·2 cites·20 claims
- 0876US12369358B2Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devicesINTEL CORP·Filed 2019·Granted Jul 22, 2025·2 cites·18 claims
- 0975US12453145B2Single gated 3D nanowire inverter for high density thick gate SoC applicationsINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1075US11862703B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1173US12249622B2Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applicationsINTEL CORP·Filed 2019·Granted Mar 11, 2025·1 cites·18 claims
- 1272US11881511B2Superlattice FINFET with tunable drive current capabilityINTEL CORP·Filed 2018·Granted Jan 23, 2024·1 cites·14 claims
- 1369US11830818B2Semiconductor device having metal interconnects with different thicknessesINTEL CORP·Filed 2022·Granted Nov 28, 2023·0 cites·6 claims
- 1468US10964690B2Resistor between gates in self-aligned gate edge architectureINTEL CORP·Filed 2017·Granted Mar 30, 2021·1 cites·20 claims
- 1568US2025185317A1Nanoribbon thick gate devices with differential ribbon spacing and width for soc applicationsINTEL CORP·Filed 2025·Application pending·0 cites
- 1665US9911815B2Extended-drain structures for high voltage field effect transistorsINTEL CORP·Filed 2014·Granted Mar 6, 2018·1 cites·21 claims
- 1762US10505034B2Vertical transistor using a through silicon via gateINTEL CORP·Filed 2015·Granted Dec 10, 2019·1 cites·9 claims
- 1861US11791380B2Single gated 3D nanowire inverter for high density thick gate SOC applicationsINTEL CORP·Filed 2019·Granted Oct 17, 2023·0 cites·24 claims
- 1959US10158034B2Through silicon via based photovoltaic cellINTEL CORP·Filed 2014·Granted Dec 18, 2018·0 cites·21 claims
- 2055US11715790B2Charge-induced threshold voltage tuning in III-N transistorsINTEL CORP·Filed 2019·Granted Aug 1, 2023·0 cites·19 claims
- 2155US11658217B2Transistors with ion- or fixed charge-based field plate structuresINTEL CORP·Filed 2019·Granted May 23, 2023·0 cites·25 claims
- 2254US11610971B2Cap layer on a polarization layer to preserve channel sheet resistanceINTEL CORP·Filed 2018·Granted Mar 21, 2023·0 cites·19 claims
- 2352US11848362B2III-N transistors with contacts of modified widthsINTEL CORP·Filed 2019·Granted Dec 19, 2023·0 cites·20 claims
- 2452US11527532B2Enhancement-depletion cascode arrangements for enhancement mode III-N transistorsINTEL CORP·Filed 2019·Granted Dec 13, 2022·0 cites·20 claims
- 2551US12027613B2III-N transistor arrangements for reducing nonlinearity of off-state capacitanceINTEL CORP·Filed 2019·Granted Jul 2, 2024·0 cites·20 claims
- 2651US11757027B2E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdownINTEL CORP·Filed 2018·Granted Sep 12, 2023·0 cites·18 claims
- 2751US11652143B2III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectricsINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·24 claims
- 2851US11581313B2Integration of III-N transistors and non-III-N transistors by semiconductor regrowthINTEL CORP·Filed 2019·Granted Feb 14, 2023·0 cites·20 claims
- 2951US11264329B2Semiconductor device having metal interconnects with different thicknessesINTEL CORP·Filed 2016·Granted Mar 1, 2022·0 cites·15 claims
- 3050US12148757B2Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator materialINTEL CORP·Filed 2019·Granted Nov 19, 2024·0 cites·20 claims
- 3150US11996403B2ESD diode solution for nanoribbon architecturesINTEL CORP·Filed 2019·Granted May 28, 2024·0 cites·11 claims
- 3249US12040395B2High voltage extended-drain MOS (EDMOS) nanowire transistorsINTEL CORP·Filed 2019·Granted Jul 16, 2024·0 cites·21 claims
- 3349US11450617B2Transmission line structures for III-N devicesINTEL CORP·Filed 2019·Granted Sep 20, 2022·0 cites·20 claims
- 3448US11587924B2Integration of passive components in III-N devicesINTEL CORP·Filed 2019·Granted Feb 21, 2023·0 cites·14 claims
- 3547US11688788B2Transistor gate structure with hybrid stacks of dielectric materialINTEL CORP·Filed 2018·Granted Jun 27, 2023·0 cites·17 claims
- 3647US11670709B2III-N transistors with local stressors for threshold voltage controlINTEL CORP·Filed 2019·Granted Jun 6, 2023·0 cites·20 claims
- 3747US10903372B2Metal-oxide-polysilicon tunable resistor for flexible circuit design and method of fabricating sameINTEL CORP·Filed 2015·Granted Jan 26, 2021·0 cites·22 claims
- 3846US11502191B2Transistors with backside field plate structuresINTEL CORP·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 3946US2022068910A1Iii-n transistors with integrated linearization devicesINTEL CORP·Filed 2020·Application pending·0 cites
- 4045US11626513B2Antenna gate field plate on 2DEG planar FETINTEL CORP·Filed 2018·Granted Apr 11, 2023·0 cites·15 claims
- 4144US2021184045A1High voltage ultra-low power thick gate nanoribbon transistors for soc applicationsINTEL CORP·Filed 2019·Application pending·0 cites
- 4243US2021193844A1Strain based performance enhancement using selective metal oxidation inside gateINTEL CORP·Filed 2019·Application pending·0 cites
- 4342US2020227407A1Integration of iii-n transistors and polysilicon resistorsINTEL CORP·Filed 2019·Application pending·0 cites
- 4442US2020395358A1Co-integration of extended-drain and self-aligned iii-n transistors on a single dieINTEL CORP·Filed 2019·Application pending·0 cites
- 4540US11737362B2Harvesting energy in an integrated circuit using the seebeck effectINTEL CORP·Filed 2016·Granted Aug 22, 2023·0 cites·3 claims
- 4640US2020219772A1Maskless process for fabricating gate structures and schottky diodesINTEL CORP·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →