Integration of passive components in III-N devices

Abstract

Disclosed herein are integrated circuit structures, packages, and devices that include resistors and/or capacitors which may be provided on the same substrate/die/chip as III-N devices, e.g., III-N transistors. An integrated circuit structure, comprising a base structure comprising a III-N material, the base structure having a conductive region of a doped III-N material. The IC structure further comprises a first contact element, including a first conductive element, a dielectric element, and a second conductive element, wherein the dielectric element is between the first conductive element and the second conductive element, and wherein the first conductive element is between the conductive region and the dielectric element. The IC structure further comprises a second contact element electrically coupled to the first contact element via the conductive region.

The invention claimed is: 
     
       1. An integrated circuit (IC) structure, comprising:
 a base structure comprising a III-N material, the base structure having a conductive region of a doped III-N material; 
 a capacitor, including:
 a first conductive element; 
 a dielectric element; and 
 a second conductive element, wherein the dielectric element is between the first conductive element and the second conductive element, and wherein the first conductive element is between the conductive region and the dielectric element; 
 
 a contact element; and 
 a resistor, the resistor comprising a conductive layer, 
 wherein:
 the conductive layer has a first portion between the contact element and the base structure, 
 the second conductive element is a second portion of the conductive layer, 
 the first portion of the conductive layer and the second portion of the conductive layer are materially continuous portions of the conductive layer, and 
 the contact element is electrically coupled to the capacitor via the conductive layer. 
 
 
     
     
       2. The IC structure of  claim 1 , wherein the doped III-N material comprises an n-type doped III-N material. 
     
     
       3. The IC structure of  claim 1 , wherein the dielectric element has a uniform thickness. 
     
     
       4. The IC structure of  claim 1 , wherein the dielectric element comprises one or more of:
 a material including titanium and oxygen, 
 a material including hafnium and oxygen, 
 a material including silicon and nitrogen, or 
 a material including silicon and oxygen. 
 
     
     
       5. The IC structure of  claim 1 , wherein the first conductive element comprises titanium nitride. 
     
     
       6. The IC structure of  claim 1 , wherein the conductive region is a first conductive region, wherein the base structure further has a polarization material and a second conductive region, wherein the polarization material extends from the first conductive region to the second conductive region, and wherein the contact element is further electrically coupled to the capacitor via the polarization material and the second conductive region. 
     
     
       7. The IC structure of  claim 6 , wherein the polarization material includes aluminum, indium, gallium, or nitride. 
     
     
       8. The IC structure of  claim 1 , wherein the contact element comprises a source contact or a drain contact of a transistor of the IC structure. 
     
     
       9. The IC structure of  claim 1 , wherein the IC structure comprises a front-end structure. 
     
     
       10. The IC structure of  claim 1 , wherein:
 the base structure further includes a polarization material over the III-N material, and 
 the conductive region of the doped III-N material is laterally adjacent to the polarization material and to the III-N material. 
 
     
     
       11. The IC structure of  claim 1 , wherein:
 the conductive region of the doped III-N material is a first conductive region of the doped III-N material, 
 the base structure further includes a second conductive region of the doped III-N material and a polarization material, 
 in a plane parallel to the base structure, the polarization material is between the first conductive region of the doped III-N material and the second conductive region of the doped III-N material. 
 
     
     
       12. The IC structure of  claim 11 , wherein, in a further plane parallel to the base structure, the III-N material is between the first conductive region of the doped III-N material and the second conductive region of the doped III-N material. 
     
     
       13. The IC structure of  claim 11 , wherein the polarization material is over the III-N material. 
     
     
       14. The IC structure of  claim 1 , wherein the dielectric element electrically separates the first conductive element and the second conductive element.