Inventor · disambiguated record
Rahul Ramaswamy
Also filed as: RAMASWAMY RAHUL
45 granted patents·15 pending applications·37 citations·filing 2013–2025
96Inventor score
Files withINTEL CORP60
Top patents by PatentIndex Score
60 records- 0196US11094782B1Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2020·Granted Aug 17, 2021·8 cites·25 claims
- 0291US11387328B2III-N tunnel device architectures and high frequency mixers employing a III-N tunnel deviceINTEL CORP·Filed 2018·Granted Jul 12, 2022·6 cites·20 claims
- 0388US11437483B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2020·Granted Sep 6, 2022·2 cites·25 claims
- 0483US9947585B2Multi-gate transistor with variably sized finINTEL CORP·Filed 2014·Granted Apr 17, 2018·5 cites·24 claims
- 0581US10756210B2Depletion mode gate in ultrathin FINFET based architectureINTEL CORP·Filed 2016·Granted Aug 25, 2020·3 cites·10 claims
- 0679US12349411B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0778US11588037B2Planar transistors with wrap-around gates and wrap-around source and drain contactsINTEL CORP·Filed 2019·Granted Feb 21, 2023·2 cites·20 claims
- 0878US10192969B2Transistor gate metal with laterally graduated work functionINTEL CORP·Filed 2014·Granted Jan 29, 2019·4 cites·11 claims
- 0976US12369358B2Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devicesINTEL CORP·Filed 2019·Granted Jul 22, 2025·2 cites·18 claims
- 1075US12453145B2Single gated 3D nanowire inverter for high density thick gate SoC applicationsINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1175US11862703B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1273US12249622B2Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applicationsINTEL CORP·Filed 2019·Granted Mar 11, 2025·1 cites·18 claims
- 1372US11881511B2Superlattice FINFET with tunable drive current capabilityINTEL CORP·Filed 2018·Granted Jan 23, 2024·1 cites·14 claims
- 1468US10964690B2Resistor between gates in self-aligned gate edge architectureINTEL CORP·Filed 2017·Granted Mar 30, 2021·1 cites·20 claims
- 1568US2025185317A1Nanoribbon thick gate devices with differential ribbon spacing and width for soc applicationsINTEL CORP·Filed 2025·Application pending·0 cites
- 1667US11581404B2Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2021·Granted Feb 14, 2023·0 cites·24 claims
- 1767US10811751B2Monolithic splitter using re-entrant poly silicon waveguidesINTEL CORP·Filed 2016·Granted Oct 20, 2020·1 cites·25 claims
- 1865US2025089312A1Gate-all-around integrated circuit structures having differential nanowire thickness and gate oxide thicknessINTEL CORP·Filed 2023·Application pending·0 cites
- 1964US9741721B2Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)INTEL CORP·Filed 2013·Granted Aug 22, 2017·1 cites·18 claims
- 2061US11791380B2Single gated 3D nanowire inverter for high density thick gate SOC applicationsINTEL CORP·Filed 2019·Granted Oct 17, 2023·0 cites·24 claims
- 2159US2025210460A1Transistor performance improvement for stacked devices using selective front and backside contact metalsINTEL CORP·Filed 2023·Application pending·0 cites
- 2258US2025221017A1Hv transistors & resistors for stacked transistor architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 2357US2025120143A1Extended drain transistor for high voltage applicationsINTEL CORP·Filed 2023·Application pending·0 cites
- 2457US2025113561A1Stacked transistors with strain materials on source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 2555US11715790B2Charge-induced threshold voltage tuning in III-N transistorsINTEL CORP·Filed 2019·Granted Aug 1, 2023·0 cites·19 claims
- 2655US11658217B2Transistors with ion- or fixed charge-based field plate structuresINTEL CORP·Filed 2019·Granted May 23, 2023·0 cites·25 claims
- 2755US2019097057A1Non-linear fin-based devicesINTEL CORP·Filed 2018·Application pending·0 cites
- 2854US11610971B2Cap layer on a polarization layer to preserve channel sheet resistanceINTEL CORP·Filed 2018·Granted Mar 21, 2023·0 cites·19 claims
- 2952US11848362B2III-N transistors with contacts of modified widthsINTEL CORP·Filed 2019·Granted Dec 19, 2023·0 cites·20 claims
- 3052US11527532B2Enhancement-depletion cascode arrangements for enhancement mode III-N transistorsINTEL CORP·Filed 2019·Granted Dec 13, 2022·0 cites·20 claims
- 3152US10761264B2Transmission lines using bending fins from local stressINTEL CORP·Filed 2016·Granted Sep 1, 2020·0 cites·25 claims
- 3252US10164115B2Non-linear fin-based devicesINTEL CORP·Filed 2014·Granted Dec 25, 2018·0 cites·22 claims
- 3351US12027613B2III-N transistor arrangements for reducing nonlinearity of off-state capacitanceINTEL CORP·Filed 2019·Granted Jul 2, 2024·0 cites·20 claims
- 3451US11757027B2E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdownINTEL CORP·Filed 2018·Granted Sep 12, 2023·0 cites·18 claims
- 3551US11652143B2III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectricsINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·24 claims
- 3651US11581313B2Integration of III-N transistors and non-III-N transistors by semiconductor regrowthINTEL CORP·Filed 2019·Granted Feb 14, 2023·0 cites·20 claims
- 3750US12148757B2Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator materialINTEL CORP·Filed 2019·Granted Nov 19, 2024·0 cites·20 claims
- 3850US11996403B2ESD diode solution for nanoribbon architecturesINTEL CORP·Filed 2019·Granted May 28, 2024·0 cites·11 claims
- 3949US12040395B2High voltage extended-drain MOS (EDMOS) nanowire transistorsINTEL CORP·Filed 2019·Granted Jul 16, 2024·0 cites·21 claims
- 4049US11450617B2Transmission line structures for III-N devicesINTEL CORP·Filed 2019·Granted Sep 20, 2022·0 cites·20 claims
- 4149US10854757B2FINFET based junctionless wrap around structureINTEL CORP·Filed 2016·Granted Dec 1, 2020·0 cites·20 claims
- 4249US2023102318A1Group iii-nitride semiconductor array with heterogeneous electrodes for radio frequency processingINTEL CORP·Filed 2021·Application pending·0 cites
- 4348US12108595B2Integrated fuse in self-aligned gate endcap for FinFET architectures and methods of fabricationINTEL CORP·Filed 2020·Granted Oct 1, 2024·0 cites·18 claims
- 4448US12089411B2Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devicesINTEL CORP·Filed 2020·Granted Sep 10, 2024·0 cites·14 claims
- 4548US11587924B2Integration of passive components in III-N devicesINTEL CORP·Filed 2019·Granted Feb 21, 2023·0 cites·14 claims
- 4648US10763209B2MOS antifuse with void-accelerated breakdownINTEL CORP·Filed 2014·Granted Sep 1, 2020·0 cites·21 claims
- 4747US11688788B2Transistor gate structure with hybrid stacks of dielectric materialINTEL CORP·Filed 2018·Granted Jun 27, 2023·0 cites·17 claims
- 4847US11670709B2III-N transistors with local stressors for threshold voltage controlINTEL CORP·Filed 2019·Granted Jun 6, 2023·0 cites·20 claims
- 4946US11502191B2Transistors with backside field plate structuresINTEL CORP·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 5046US11075286B2Hybrid finfet structure with bulk source/drain regionsINTEL CORP·Filed 2016·Granted Jul 27, 2021·0 cites·21 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →