Inventor · disambiguated record
Nicolas Posseme
Also filed as: POSSEME NICOLAS
81 granted patents·15 pending applications·93 citations·filing 2011–2024
98Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE83APPLIED MATERIALS INC2VINET MAUD2COMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1
Top patents by PatentIndex Score
96 records- 0193US12087707B2Method of making an individualization zone of an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Sep 10, 2024·2 cites·11 claims
- 0292US9570317B2Microelectronic method for etching a layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 14, 2017·14 cites·28 claims
- 0389US9257293B2Methods of forming silicon nitride spacersAPPLIED MATERIALS INC·Filed 2014·Granted Feb 9, 2016·10 cites·20 claims
- 0488US10043890B2Method of forming spacers for a gate of a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Aug 7, 2018·7 cites·29 claims
- 0586US9583339B2Method for forming spacers for a transistor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 28, 2017·4 cites·28 claims
- 0686US9378970B2Plasma etching processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jun 28, 2016·9 cites·32 claims
- 0784US9853124B2Method for fabricating a nanowire semiconductor transistor having an auto-aligned gate and spacersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 26, 2017·4 cites·14 claims
- 0882US10062602B2Method of etching a porous dielectric materialCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2013·Granted Aug 28, 2018·5 cites·28 claims
- 0982US9054045B2Method for isotropic etchingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jun 9, 2015·5 cites·18 claims
- 1077US10573529B2Method of etching a three-dimensional dielectric layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Feb 25, 2020·2 cites·19 claims
- 1176US11049724B2Method for producing patterns in a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jun 29, 2021·2 cites·25 claims
- 1276US9947768B2Method for forming spacers for a transistor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Apr 17, 2018·2 cites·23 claims
- 1373US9543409B2Production of spacers at flanks of a transistor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jan 10, 2017·2 cites·20 claims
- 1471US11380648B2Process for manufacturing assembly pads on a carrier for the self-assembly of an electronic circuit on the carrierCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 5, 2022·1 cites·13 claims
- 1571US11217446B2Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jan 4, 2022·1 cites·16 claims
- 1671US11121043B2Fabrication of transistors having stressed channelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Sep 14, 2021·1 cites·21 claims
- 1771US9780000B2Method for forming spacers for a transitor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Oct 3, 2017·2 cites·20 claims
- 1871US9076732B2Method to prepare semi-conductor device comprising a selective etching of a silicium—germanium layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jul 7, 2015·2 cites·16 claims
- 1970US9437418B2Method for forming spacers for a transistor gateCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Sep 6, 2016·2 cites·30 claims
- 2070US8956886B2Embedded test structure for trimming process controlAPPLIED MATERIALS INC·Filed 2014·Granted Feb 17, 2015·2 cites·20 claims
- 2169US10795257B2Method for forming a functionalised guide pattern for a graphoepitaxy methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Oct 6, 2020·1 cites·18 claims
- 2268US10923352B2Method for forming a functionalised guide pattern for a graphoepitaxy methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Feb 16, 2021·1 cites·20 claims
- 2366US10446408B2Process for etching a SiN-based layerCOMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2018·Granted Oct 15, 2019·1 cites·18 claims
- 2466US9934973B2Method for obtaining patterns in a layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Apr 3, 2018·1 cites·19 claims
- 2566US9780191B2Method of forming spacers for a gate of a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Oct 3, 2017·1 cites·42 claims
- 2666US9337350B2Transistor with reduced parasitic capacitance and access resistance of the source and drain, and method of fabrication of the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted May 10, 2016·2 cites·15 claims
- 2765US10347545B2Method for producing on the same transistors substrate having different characteristicsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 9, 2019·1 cites·21 claims
- 2865US9607840B2Method for forming spacers for a transistor gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Mar 28, 2017·1 cites·20 claims
- 2964US11127835B2Method for etching a three-dimensional dielectric layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Sep 21, 2021·1 cites·20 claims
- 3064US9947541B2Method of forming spacers for a gate of a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Apr 17, 2018·1 cites·16 claims
- 3163US12094722B2Method for increasing the surface roughness of a metal layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Sep 17, 2024·0 cites·16 claims
- 3263US10014386B2Method of manufacturing a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 3, 2018·1 cites·16 claims
- 3362US9698250B2Method for the surface etching of a three-dimensional structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jul 4, 2017·1 cites·18 claims
- 3461US12215430B2Method for increasing the surface roughness of a metal layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Feb 4, 2025·0 cites·11 claims
- 3560US2024411057A1Process for manufacturing a three-dimensional structure in bendingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 3659US12488983B2Method for activating an exposed layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 3759US12408405B2Device comprising spacers including a localised airgap and associated manufacturing methodsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Sep 2, 2025·0 cites·14 claims
- 3859US11495462B2Formation of reliefs on the surface of a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 8, 2022·0 cites·16 claims
- 3959US8722499B2Method for fabricating a field effect device with weak junction capacitanceVINET MAUD·Filed 2012·Granted May 13, 2014·1 cites·5 claims
- 4059US2025040455A1Method of manufacturing an electronic componentCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2024·Application pending·0 cites
- 4158US2024063058A1Method for producing an individualization zone of an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 4256US11941485B2Method of making a quantum deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 26, 2024·0 cites·15 claims
- 4356US11929290B2Method of manufacturing microelectronic componentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 12, 2024·0 cites·14 claims
- 4455US12233577B2Method for manufacturing a mould for nanoprinting and associated mouldCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Feb 25, 2025·0 cites·18 claims
- 4555US2022350252A1Process for hybrid surface structuring by plasma etchingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 4654US12477958B2Method for making an electronic device with superconductor qubit(s) including at least one JoFETCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Granted Nov 18, 2025·0 cites·14 claims
- 4754US2023210021A1Method of making superconducting interconnectionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 4852US10741398B2Formation of reliefs on the surface of a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Aug 11, 2020·0 cites·18 claims
- 4951US9805948B2Selective etching process of a mask disposed on a silicon substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Oct 31, 2017·0 cites·12 claims
- 5051US9607823B2Protection method for protecting a silicide layerCommissariat à l'Energie Atomique et aux Energies Alternatives·Filed 2014·Granted Mar 28, 2017·0 cites·16 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →