Inventor · disambiguated record
Nicholas A. Thomson
Also filed as: THOMSON NICHOLAS A · THOMSON Nicholas
13 granted patents·20 pending applications·9 citations·filing 2019–2025
84Inventor score
Top patents by PatentIndex Score
33 records- 0190US11908856B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Feb 20, 2024·5 cites·22 claims
- 0288US11824116B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Nov 21, 2023·4 cites·20 claims
- 0378US12294003B2Integrated circuit structures including backside viasINTEL CORP·Filed 2023·Granted May 6, 2025·0 cites·16 claims
- 0478US2025228012A1Integrated circuit structures including backside viasINTEL CORP·Filed 2025·Application pending·0 cites
- 0577US12288789B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 0676US12402349B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 0773US2025261452A1Substrate-less silicon controlled rectifier (scr) integrated circuit structuresINTEL CORP·Filed 2025·Application pending·0 cites
- 0872US11791331B2Integrated circuit structures including backside viasINTEL CORP·Filed 2021·Granted Oct 17, 2023·0 cites·16 claims
- 0971US2025254993A1Substrate-free integrated circuit structuresINTEL CORP·Filed 2025·Application pending·0 cites
- 1070US2024055497A1Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contactINTEL CORP·Filed 2023·Application pending·0 cites
- 1165US12328947B2Substrate-less silicon controlled rectifier (SCR) integrated circuit structuresINTEL CORP·Filed 2021·Granted Jun 10, 2025·0 cites·20 claims
- 1264US12317590B2Substrate-free integrated circuit structuresINTEL CORP·Filed 2020·Granted May 27, 2025·0 cites·10 claims
- 1360US11837641B2Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contactINTEL CORP·Filed 2019·Granted Dec 5, 2023·0 cites·18 claims
- 1459US12507475B2Substrate-less lateral diode integrated circuit structuresINTEL CORP·Filed 2021·Granted Dec 23, 2025·0 cites·20 claims
- 1559US2021202472A1Integrated circuit structures including backside viasINTEL CORP·Filed 2019·Application pending·0 cites
- 1656US12328946B2ESD protection decoupled from diffusionINTEL CORP·Filed 2020·Granted Jun 10, 2025·0 cites·17 claims
- 1754US2024170581A1Backside contacted sub-fin diodesINTEL CORP·Filed 2022·Application pending·0 cites
- 1853US2025393251A1Integrated circuit structure with backside conductive feed-throughINTEL CORP·Filed 2024·Application pending·0 cites
- 1951US2024088134A1Targeted sub-fin etch depthINTEL CORP·Filed 2022·Application pending·0 cites
- 2051US2024088131A1Diodes with backside contactINTEL CORP·Filed 2022·Application pending·0 cites
- 2150US11652107B2Substrate-less FinFET diode architectures with backside metal contact and subfin regionsINTEL CORP·Filed 2019·Granted May 16, 2023·0 cites·10 claims
- 2250US2024088136A1Transistor devices with extended drainINTEL CORP·Filed 2022·Application pending·0 cites
- 2350US2024088133A1Transistor devices with integrated diodesINTEL CORP·Filed 2022·Application pending·0 cites
- 2449US2023088578A1Lateral diodes in stacked transistor technologiesINTEL CORP·Filed 2021·Application pending·0 cites
- 2549US2022415880A1Substrate-less diode, bipolar and feedthrough integrated circuit structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 2648US11145732B2Field-effect transistors with dual thickness gate dielectricsINTEL CORP·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 2748US2022416022A1Substrate-less nanowire-based lateral diode integrated circuit structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 2848US2024355915A1Backside conductive structures extending through integrated circuit to meet frontside contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 2948US2024088132A1Wide channel diode structure including sub-finINTEL CORP·Filed 2022·Application pending·0 cites
- 3048US2023420578A1Varactor device with backside electrical contactINTEL CORP·Filed 2022·Application pending·0 cites
- 3147US2023420443A1Integrated circuit devices with diodes integrated in subfinsTHOMSON NICHOLAS A·Filed 2022·Application pending·0 cites
- 3247US2023089395A1Vertical diodes in stacked transistor technologiesINTEL CORP·Filed 2021·Application pending·0 cites
- 3347US2022415877A1Electrostatic discharge protection diode for back-side power delivery technologies and methods of fabricationINTEL CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →