Inventor · disambiguated record
Noel Hoilien
Also filed as: HOILIEN NOEL · HOILIEN NOEL P
8 granted patents·2 pending applications·22 citations·filing 2004–2021
79Inventor score
Files withPOLAR SEMICONDUCTOR INC3POLAR SEMICONDUCTOR LLC3ALLEGRO MICROSYSTEMS LLC2ERIE DAVID1HOILIEN NOEL1
Top patents by PatentIndex Score
10 records- 0194US9312473B2Vertical hall effect sensorALLEGRO MICROSYSTEMS LLC·Filed 2013·Granted Apr 12, 2016·16 cites·9 claims
- 0266US9735345B2Vertical hall effect sensorALLEGRO MICROSYSTEMS LLC·Filed 2016·Granted Aug 15, 2017·1 cites·13 claims
- 0351US11264496B2Transistor with buried p-field termination regionPOLAR SEMICONDUCTOR LLC·Filed 2020·Granted Mar 1, 2022·0 cites·11 claims
- 0451US8736003B2Integrated hybrid hall effect transducerERIE DAVID·Filed 2009·Granted May 27, 2014·1 cites·15 claims
- 0550US11329147B2Insulated gate bipolar transistor with epitaxial layer formed on recombination regionPOLAR SEMICONDUCTOR LLC·Filed 2020·Granted May 10, 2022·0 cites·7 claims
- 0649US7135750B1Photodiode array having reduced dead spacePOLAR SEMICONDUCTOR INC·Filed 2004·Granted Nov 14, 2006·4 cites·12 claims
- 0748US12015079B2Transistor with single termination trench having depth more than 10 micronsPOLAR SEMICONDUCTOR LLC·Filed 2021·Granted Jun 18, 2024·0 cites·17 claims
- 0839US2006270165A1Multi-layered spacer for lightly-doped drain MOSFETSPOLAR SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 0937US8461661B2Locos nitride capping of deep trench polysilicon fillHOILIEN NOEL·Filed 2009·Granted Jun 11, 2013·0 cites·14 claims
- 1036US2006267146A1Multilayered emitter window for bipolar junction transistorPOLAR SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →