Inventor · disambiguated record
Noriyuki Iwamuro
Also filed as: IWAMURO NORIYUKI
45 granted patents·1 pending application·413 citations·filing 1991–2017
98Inventor score
Files withFUJI ELECTRIC CO LTD33IWAMURO NORIYUKI6FUJI ELEC DEVICE TECH CO LTD1FUJI ELECTRIC HOLDINGS1FUJI ELECTRIC SYSTEMS CO LTD1
Top patents by PatentIndex Score
46 records- 0188US8390027B2Gallium nitride semiconductor device and manufacturing method thereofIWAMURO NORIYUKI·Filed 2008·Granted Mar 5, 2013·13 cites·5 claims
- 0287US7713794B2Manufacturing method of a semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2008·Granted May 11, 2010·11 cites·16 claims
- 0385US6054728AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1998·Granted Apr 25, 2000·56 cites·8 claims
- 0484US10263105B2High voltage semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Apr 16, 2019·4 cites·17 claims
- 0582US8198676B2P-channel silicon carbide MOSFETIWAMURO NORIYUKI·Filed 2010·Granted Jun 12, 2012·7 cites·2 claims
- 0681US8431991B2Semiconductor deviceIWAMURO NORIYUKI·Filed 2008·Granted Apr 30, 2013·9 cites·10 claims
- 0781US7535059B2Semiconductor device and manufacturing method of the semiconductor deviceFUJI ELECTRIC HOLDINGS·Filed 2006·Granted May 19, 2009·8 cites·14 claims
- 0880US5914503AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1997·Granted Jun 22, 1999·48 cites·40 claims
- 0978US9455326B2Wide bandgap semiconductor deviceKINOSHITA AKIMASA·Filed 2012·Granted Sep 27, 2016·6 cites·9 claims
- 1078US8564028B2Low on-resistance wide band gap semiconductor device and method for producing the sameIWAMURO NORIYUKI·Filed 2009·Granted Oct 22, 2013·6 cites·6 claims
- 1175US8299522B2Semiconductor deviceIWAMURO NORIYUKI·Filed 2011·Granted Oct 30, 2012·3 cites·4 claims
- 1272US8188511B2Semiconductor device and method of manufacturing thereofIWAMURO NORIYUKI·Filed 2008·Granted May 29, 2012·5 cites·18 claims
- 1371US9627486B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·11 claims
- 1470US7932559B2Semiconductor deviceFUJI ELECTRIC SYSTEMS CO LTD·Filed 2008·Granted Apr 26, 2011·3 cites·10 claims
- 1569US9252266B2Wide band gap semiconductor device and method for producing the sameFUJI ELECTRIC CO LTD·Filed 2013·Granted Feb 2, 2016·2 cites·4 claims
- 1669US9184230B2Silicon carbide vertical field effect transistorHARADA YUICHI·Filed 2012·Granted Nov 10, 2015·3 cites·7 claims
- 1767US5936267AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1997·Granted Aug 10, 1999·27 cites·10 claims
- 1866US9722018B2Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2013·Granted Aug 1, 2017·1 cites·9 claims
- 1965US5981984AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1997·Granted Nov 9, 1999·25 cites·24 claims
- 2064US5874751AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1996·Granted Feb 23, 1999·25 cites·27 claims
- 2163US9799732B2Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Oct 24, 2017·1 cites·2 claims
- 2263US9362392B2Vertical high-voltage semiconductor device and fabrication method thereofFUJI ELECTRIC CO LTD·Filed 2013·Granted Jun 7, 2016·1 cites·12 claims
- 2362US8138542B2Semiconductor device and manufacturing method of the semiconductor deviceYOSHIKAWA KOH·Filed 2009·Granted Mar 20, 2012·2 cites·4 claims
- 2462US6278140B1Insulated gate thyristorFUJI ELECTRIC CO LTD·Filed 2000·Granted Aug 21, 2001·9 cites·3 claims
- 2562US5644150AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1995·Granted Jul 1, 1997·22 cites·6 claims
- 2661US5659185AInsulated Gate thyristorFUJI ELECTRIC CO LTD·Filed 1995·Granted Aug 19, 1997·21 cites·6 claims
- 2760US9537002B2Semiconductor device with SiC base layerFUJI ELECTRIC CO LTD·Filed 2013·Granted Jan 3, 2017·1 cites·9 claims
- 2859US5326993AInsulated gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 1992·Granted Jul 5, 1994·19 cites·5 claims
- 2955US6072199AInsulated gate bipolar transistorFUJI ELECTRIC CO LTD·Filed 1993·Granted Jun 6, 2000·16 cites·5 claims
- 3053US8779504B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2012·Granted Jul 15, 2014·0 cites·4 claims
- 3153US6091087AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1997·Granted Jul 18, 2000·15 cites·46 claims
- 3251US10211330B2Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·1 claims
- 3348US6346740B1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2000·Granted Feb 12, 2002·3 cites·4 claims
- 3443US10090417B2Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Oct 2, 2018·0 cites·3 claims
- 3543US9673313B2Silicon carbide semiconductor device and fabrication method thereofFUJI ELECTRIC CO LTD·Filed 2013·Granted Jun 6, 2017·0 cites·5 claims
- 3643US9450051B2High voltage semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2013·Granted Sep 20, 2016·0 cites·12 claims
- 3743US5614738AInsulated gate thyristor having a polysilicon resistor connected to its baseFUJI ELECTRIC CO LTD·Filed 1995·Granted Mar 25, 1997·8 cites·12 claims
- 3841US9356100B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted May 31, 2016·0 cites·3 claims
- 3941US9040402B2Fabrication method of silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted May 26, 2015·0 cites·10 claims
- 4041US5637888AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1995·Granted Jun 10, 1997·7 cites·14 claims
- 4138US5360983AInsulated gate bipolar transistor having a specific buffer layer resistanceFUJI ELECTRIC CO LTD·Filed 1993·Granted Nov 1, 1994·6 cites·3 claims
- 4238US5306929AMOS controlled thyristorFUJI ELECTRIC CO LTD·Filed 1991·Granted Apr 26, 1994·6 cites·3 claims
- 4337US5684306AInsulated gate thyristorFUJI ELECTRIC CO LTD·Filed 1996·Granted Nov 4, 1997·5 cites·9 claims
- 4436US6469344B2Semiconductor device having low on resistance high speed turn off and short switching turn off storage timeFUJI ELECTRIC CO LTD·Filed 1999·Granted Oct 22, 2002·4 cites·10 claims
- 4532US5122854AMOS control thyristorFUJI ELECTRIC CO LTD·Filed 1991·Granted Jun 16, 1992·2 cites·1 claims
- 4628US2001045624A1High-voltage silicon diodeFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →