Inventor · disambiguated record
Noriaki Oda
Also filed as: ODA NORIAKI
52 granted patents·9 pending applications·1,322 citations·filing 1993–2020
99Inventor score
Files withNEC CORP33NEC ELECTRONICS CORP19ODA NORIAKI4SANDISK TECHNOLOGIES LLC2NEC ENERGY DEVICES LTD1
Top patents by PatentIndex Score
61 records- 0199US6503826B1Semiconductor device and method for manufacturing the sameNEC CORP·Filed 2000·Granted Jan 7, 2003·538 cites·9 claims
- 0290US5994749ASemiconductor device having a gate electrode film containing nitrogenNEC CORP·Filed 1998·Granted Nov 30, 1999·74 cites·7 claims
- 0388US11450624B2Semiconductor die including diffusion barrier layers embedding bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 20, 2022·2 cites·13 claims
- 0487US11444039B2Semiconductor die including diffusion barrier layers embedding bonding pads and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 13, 2022·2 cites·7 claims
- 0586US8330276B2Semiconductor device and method for manufacturing the sameODA NORIAKI·Filed 2010·Granted Dec 11, 2012·10 cites·12 claims
- 0686US8310056B2Semiconductor deviceODA NORIAKI·Filed 2010·Granted Nov 13, 2012·10 cites·20 claims
- 0784US7846830B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2007·Granted Dec 7, 2010·11 cites·7 claims
- 0884US5930667AMethod for fabricating multilevel interconnection structure for semiconductor devicesNEC CORP·Filed 1997·Granted Jul 27, 1999·67 cites·2 claims
- 0982US6091081AInsulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating filmNEC CORP·Filed 1997·Granted Jul 18, 2000·55 cites·13 claims
- 1081US7397125B2Semiconductor device with bonding pad support structureNEC ELECTRONICS CORP·Filed 2004·Granted Jul 8, 2008·23 cites·21 claims
- 1181US6091121ASemiconductor device and method for manufacturing the sameNEC CORP·Filed 1998·Granted Jul 18, 2000·56 cites·7 claims
- 1280US7312535B2Semiconductor device having an anti-oxidizing layer that inhibits corrosion of an interconnect layerNEC ELECTRONICS CORP·Filed 2004·Granted Dec 25, 2007·26 cites·14 claims
- 1377US7692265B2Fuse and seal ringNEC ELECTRONICS CORP·Filed 2005·Granted Apr 6, 2010·7 cites·13 claims
- 1474US6505332B1Method and apparatus for generating logic cell library and method and apparatus for wiring layout using the sameNEC CORP·Filed 2000·Granted Jan 7, 2003·20 cites·11 claims
- 1571US5472890AMethod for fabricating an insulating gate field effect transistorNEC CORP·Filed 1995·Granted Dec 5, 1995·40 cites·10 claims
- 1670US6531779B1Multi-layer interconnection structure in semiconductor device and method for fabricating sameNEC CORP·Filed 2000·Granted Mar 11, 2003·14 cites·11 claims
- 1769US7508082B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Granted Mar 24, 2009·3 cites·6 claims
- 1869US6372628B1Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor deviceNEC CORP·Filed 2000·Granted Apr 16, 2002·11 cites·3 claims
- 1968US6316833B1Semiconductor device with multilayer interconnection having HSQ film with implanted fluorine and fluorine preventing linerNEC CORP·Filed 1999·Granted Nov 13, 2001·33 cites·9 claims
- 2067US8564090B2Semiconductor device and method of manufacturing semiconductor deviceODA NORIAKI·Filed 2010·Granted Oct 22, 2013·2 cites·10 claims
- 2167US5793113AMultilevel interconnection structure for semiconductor devicesNEC CORP·Filed 1996·Granted Aug 11, 1998·30 cites·120 claims
- 2264US7327031B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2004·Granted Feb 5, 2008·9 cites·6 claims
- 2364US7230337B2Semiconductor device including ladder-shaped siloxane hydride and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2004·Granted Jun 12, 2007·9 cites·8 claims
- 2462US6288430B1Semiconductor device having silicide layer with siliconrich region and method for making the sameNEC CORP·Filed 1999·Granted Sep 11, 2001·17 cites·9 claims
- 2562US6187662B1Semiconductor device with low permittivity interlayer insulating film and method of manufacturing the sameNEC CORP·Filed 1999·Granted Feb 13, 2001·25 cites·18 claims
- 2661US6756676B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2001·Granted Jun 29, 2004·6 cites·12 claims
- 2760US5883433ASemiconductor device having a critical path wiringNEC CORP·Filed 1996·Granted Mar 16, 1999·22 cites·12 claims
- 2859US6559542B1Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2000·Granted May 6, 2003·7 cites·15 claims
- 2958US6060784AInterconnection layer structure in a semiconductor integrated circuit device having macro cell regionsNEC CORP·Filed 1996·Granted May 9, 2000·23 cites·9 claims
- 3057US7432545B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Oct 7, 2008·1 cites·13 claims
- 3156US5479053ASemiconductor device with conductor clad insulator wiringNEC CORP·Filed 1993·Granted Dec 26, 1995·19 cites·7 claims
- 3255US5416359ASemiconductor device having gold wiring layer provided with a barrier metal layerNEC CORP·Filed 1993·Granted May 16, 1995·22 cites·9 claims
- 3354US7714449B2Semiconductor device with bonding pad support structureNEC ELECTRONICS CORP·Filed 2007·Granted May 11, 2010·0 cites·25 claims
- 3454US6633082B1Semiconductor device and method for manufacturing the semiconductor deviceNEC CORP·Filed 1998·Granted Oct 14, 2003·18 cites·14 claims
- 3553US2008290516A1Semiconductor device with bonding pad support structureNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 3652US6821687B2Photo mask for fabricating semiconductor device having dual damascene structureNEC ELECTRONICS CORP·Filed 2002·Granted Nov 23, 2004·5 cites·20 claims
- 3752US5592023ASemiconductor deviceNEC CORP·Filed 1995·Granted Jan 7, 1997·15 cites·23 claims
- 3851US5502335ASemiconductor device with wiring layerNEC CORP·Filed 1994·Granted Mar 26, 1996·18 cites·7 claims
- 3951US2015086865A1Positive electrode for secondary battery, secondary battery, and methods for manufacturing the sameNEC ENERGY DEVICES LTD·Filed 2013·Application pending·0 cites
- 4050US8146044B2Method of designing a semiconductor deviceODA NORIAKI·Filed 2008·Granted Mar 27, 2012·0 cites·36 claims
- 4149US5750437AMethod of fabricating semiconductor deviceNEC CORP·Filed 1997·Granted May 12, 1998·11 cites·6 claims
- 4248US6358802B1Method for manufacturing semiconductor device having a gate electrode film containing nitrogenNEC CORP·Filed 1999·Granted Mar 19, 2002·9 cites·8 claims
- 4348US5990001AMethod of forming a semiconductor device having a critical path wiringNEC CORP·Filed 1997·Granted Nov 23, 1999·12 cites·5 claims
- 4448US2006276029A1Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 4546US6492264B2Semiconductor device having a silicide layer with silicon-rich region and method for making the sameNEC CORP·Filed 2001·Granted Dec 10, 2002·2 cites·5 claims
- 4645US7763968B2Semiconductor device featuring large reinforcing elements in pad areaNEC ELECTRONICS CORP·Filed 2006·Granted Jul 27, 2010·0 cites·13 claims
- 4744US5990003AMethod of fabricating a semiconductor deviceNEC CORP·Filed 1997·Granted Nov 23, 1999·11 cites·16 claims
- 4843US5985750AManufacturing method of semiconductor deviceNEC CORP·Filed 1998·Granted Nov 16, 1999·9 cites·15 claims
- 4940US6777324B2Multi-layer interconnection structure in semiconductor device and method for fabricating sameNEC ELECTRONICS CORP·Filed 2002·Granted Aug 17, 2004·0 cites·2 claims
- 5040US2003067078A1Semiconductor device and method of manufacturing the sameNEC CORP·Filed 2002·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →